GB827501A - Method and apparatus for growing quartz - Google Patents

Method and apparatus for growing quartz

Info

Publication number
GB827501A
GB827501A GB16401/56A GB1640156A GB827501A GB 827501 A GB827501 A GB 827501A GB 16401/56 A GB16401/56 A GB 16401/56A GB 1640156 A GB1640156 A GB 1640156A GB 827501 A GB827501 A GB 827501A
Authority
GB
United Kingdom
Prior art keywords
seed
bodies
crystal
seed bodies
bar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16401/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clevite Corp
Original Assignee
Clevite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clevite Corp filed Critical Clevite Corp
Publication of GB827501A publication Critical patent/GB827501A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/18—Quartz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Quartz seed crystals are obtained by dividing a quartz Y-bar slab into at least two seed bodies elongated in the direction of their Y crystal axes and each having at least two pairs of opposed parallel major longitudinal surfaces disposing <PICT:0827501/III/1> <PICT:0827501/III/2> <PICT:0827501/III/3> the seed bodies with opposite ends overlapping, cutting through the overlapped ends at an angle inclined to one of the pairs of major longitudinal surfaces, re-disposing the seed bodies in end-to-end relation, aligning the atomic planes of the seed bodies by alignment of the major longitudinal surfaces in common planes and uniting the seed bodies by subjecting them to crystal growth. A slab of quartz 10 (Fig. 1), elongated in the direction of the Y crystal axis, is divided by two cuts along planes a and b, and then by three cuts along planes c, to give two seed bodies 20 and 22 (Fig. 3), which are placed with their ends overlapping, their original relative orientation about the crystal axes being maintained. The overlapping ends are cut at an angle of 60 degrees to the Y axis to give two end surfaces 24 and 26. The bodies 20 and 22 are placed with their end surfaces 24 and 26 together (Fig. 4), and are aligned by a steel bar 28 having an accurate planar surface which is placed against the Z surfaces of the seed bodies. The bar 28 is secured with wire 31. The seed bodies are then clamped between two steel plates 34, whereupon the bar 28 is removed, and subjected to crystal growth. Growth takes place on the Z surfaces to produce a crystal from which extra-length seed crystals may be cut. Specifications 761,643, 807,304 and 827,502 are referred to.
GB16401/56A 1955-05-27 1956-05-28 Method and apparatus for growing quartz Expired GB827501A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US827501XA 1955-05-27 1955-05-27

Publications (1)

Publication Number Publication Date
GB827501A true GB827501A (en) 1960-02-03

Family

ID=22173208

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16401/56A Expired GB827501A (en) 1955-05-27 1956-05-28 Method and apparatus for growing quartz

Country Status (1)

Country Link
GB (1) GB827501A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0515288A1 (en) * 1991-05-24 1992-11-25 France Telecom Process for the hydrothermal growth of crystals using seeds obtained by assembling flat sheets

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0515288A1 (en) * 1991-05-24 1992-11-25 France Telecom Process for the hydrothermal growth of crystals using seeds obtained by assembling flat sheets
FR2676753A1 (en) * 1991-05-24 1992-11-27 France Telecom METHOD FOR INCREASING THE DIMENSIONS OF CRYSTALS THAT CAN BE DETERMINED BY HYDROTHERMAL GROWTH, USING A GERM OBTAINED BY ASSEMBLING CRYSTALLINE BLADES.
US5377615A (en) * 1991-05-24 1995-01-03 France Telecom Process for increasing the dimensions of crystals which can be produced by hydrothermal growth, using a seed obtained by crystalline plate assembly

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