DE69217708D1 - CCD-Bildsensorvorrichtung - Google Patents
CCD-BildsensorvorrichtungInfo
- Publication number
- DE69217708D1 DE69217708D1 DE69217708T DE69217708T DE69217708D1 DE 69217708 D1 DE69217708 D1 DE 69217708D1 DE 69217708 T DE69217708 T DE 69217708T DE 69217708 T DE69217708 T DE 69217708T DE 69217708 D1 DE69217708 D1 DE 69217708D1
- Authority
- DE
- Germany
- Prior art keywords
- image sensor
- sensor device
- ccd image
- ccd
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3105597A JPH04335573A (ja) | 1991-05-10 | 1991-05-10 | Ccd固体撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69217708D1 true DE69217708D1 (de) | 1997-04-10 |
DE69217708T2 DE69217708T2 (de) | 1997-09-25 |
Family
ID=14411911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69217708T Expired - Fee Related DE69217708T2 (de) | 1991-05-10 | 1992-05-08 | CCD-Bildsensorvorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5293237A (de) |
EP (1) | EP0513683B1 (de) |
JP (1) | JPH04335573A (de) |
KR (1) | KR920022540A (de) |
DE (1) | DE69217708T2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0614225B1 (de) * | 1993-03-03 | 1998-05-13 | Koninklijke Philips Electronics N.V. | Ladungsgekoppelte Anordnung |
JP3370249B2 (ja) | 1996-12-27 | 2003-01-27 | 松下電器産業株式会社 | 固体撮像装置とその駆動方法および製造方法 |
US6721005B1 (en) * | 1998-12-03 | 2004-04-13 | Sony Corporation | Solid state image sensor having different structures for effective pixel area and optical black area |
US6147366A (en) * | 1999-02-08 | 2000-11-14 | Intel Corporation | On chip CMOS optical element |
US6445014B1 (en) | 1999-06-16 | 2002-09-03 | Micron Technology Inc. | Retrograde well structure for a CMOS imager |
US6310366B1 (en) * | 1999-06-16 | 2001-10-30 | Micron Technology, Inc. | Retrograde well structure for a CMOS imager |
JP3980302B2 (ja) * | 2001-08-21 | 2007-09-26 | 富士フイルム株式会社 | 固体撮像装置およびその駆動方法 |
JP5243984B2 (ja) | 2009-01-30 | 2013-07-24 | 浜松ホトニクス株式会社 | 電子増倍機能内蔵型の固体撮像素子 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58138187A (ja) * | 1982-02-12 | 1983-08-16 | Toshiba Corp | 固体イメ−ジセンサ |
NL8304035A (nl) * | 1983-11-24 | 1985-06-17 | Philips Nv | Blooming ongevoelige beeldopneeminrichting en werkwijze ter vervaardiging daarvan. |
JPS61144874A (ja) * | 1984-12-19 | 1986-07-02 | Toshiba Corp | 電荷転送装置 |
GB8517081D0 (en) * | 1985-07-05 | 1985-08-14 | Gen Electric Co Plc | Image sensors |
JPS62124771A (ja) * | 1985-11-25 | 1987-06-06 | Sharp Corp | 固体撮像装置 |
US4814848A (en) * | 1986-06-12 | 1989-03-21 | Hitachi, Ltd. | Solid-state imaging device |
KR100276971B1 (ko) * | 1989-06-20 | 2001-01-15 | 다카노 야스아키 | 고체촬상소자의 구동방법 |
US5115458A (en) * | 1989-09-05 | 1992-05-19 | Eastman Kodak Company | Reducing dark current in charge coupled devices |
US5130774A (en) * | 1990-07-12 | 1992-07-14 | Eastman Kodak Company | Antiblooming structure for solid-state image sensor |
-
1991
- 1991-05-10 JP JP3105597A patent/JPH04335573A/ja active Pending
-
1992
- 1992-05-02 KR KR1019920007505A patent/KR920022540A/ko not_active Application Discontinuation
- 1992-05-08 EP EP92107797A patent/EP0513683B1/de not_active Expired - Lifetime
- 1992-05-08 DE DE69217708T patent/DE69217708T2/de not_active Expired - Fee Related
- 1992-05-08 US US07/880,904 patent/US5293237A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5293237A (en) | 1994-03-08 |
JPH04335573A (ja) | 1992-11-24 |
EP0513683B1 (de) | 1997-03-05 |
EP0513683A1 (de) | 1992-11-19 |
DE69217708T2 (de) | 1997-09-25 |
KR920022540A (ko) | 1992-12-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |