DE69217273D1 - Abstimmbare optische Quelle zur Erzeugung eines kohärenten optischen Strahls mit breitem Durchstimmbereich - Google Patents

Abstimmbare optische Quelle zur Erzeugung eines kohärenten optischen Strahls mit breitem Durchstimmbereich

Info

Publication number
DE69217273D1
DE69217273D1 DE69217273T DE69217273T DE69217273D1 DE 69217273 D1 DE69217273 D1 DE 69217273D1 DE 69217273 T DE69217273 T DE 69217273T DE 69217273 T DE69217273 T DE 69217273T DE 69217273 D1 DE69217273 D1 DE 69217273D1
Authority
DE
Germany
Prior art keywords
generating
tuning range
wide tuning
optical beam
optical source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69217273T
Other languages
English (en)
Other versions
DE69217273T2 (de
Inventor
Haruhiko Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69217273D1 publication Critical patent/DE69217273D1/de
Publication of DE69217273T2 publication Critical patent/DE69217273T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
DE69217273T 1991-05-27 1992-05-26 Abstimmbare optische Quelle zur Erzeugung eines kohärenten optischen Strahls mit breitem Durchstimmbereich Expired - Fee Related DE69217273T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12130691A JP3198338B2 (ja) 1991-05-27 1991-05-27 半導体発光装置

Publications (2)

Publication Number Publication Date
DE69217273D1 true DE69217273D1 (de) 1997-03-20
DE69217273T2 DE69217273T2 (de) 1997-05-28

Family

ID=14807987

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69217273T Expired - Fee Related DE69217273T2 (de) 1991-05-27 1992-05-26 Abstimmbare optische Quelle zur Erzeugung eines kohärenten optischen Strahls mit breitem Durchstimmbereich

Country Status (4)

Country Link
US (1) US5388106A (de)
EP (1) EP0516044B1 (de)
JP (1) JP3198338B2 (de)
DE (1) DE69217273T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3123670B2 (ja) * 1991-11-11 2001-01-15 キヤノン株式会社 半導体光増幅素子およびその使用法
DE4212152A1 (de) * 1992-04-10 1993-10-14 Sel Alcatel Ag Durchstimmbarer Halbleiterlaser
DE4239655A1 (de) * 1992-11-26 1994-06-01 Sel Alcatel Ag Optische Sendeeinrichtung
US5333219A (en) * 1992-12-17 1994-07-26 At&T Bell Laboratories Asymmetric Y-branch optical device
GB9320500D0 (en) * 1993-10-05 1993-11-24 Rensihaw Plc Interferometric distance measuring apparatus
DE4410780A1 (de) * 1994-03-28 1995-10-05 Siemens Ag Integrierte Laseranordnung in Verbindung mit einem mitintegrierten Interferometer
JPH08255891A (ja) * 1995-03-17 1996-10-01 Mitsubishi Electric Corp 光集積回路装置及びその駆動方法
US6690687B2 (en) * 2001-01-02 2004-02-10 Spectrasensors, Inc. Tunable semiconductor laser having cavity with ring resonator mirror and mach-zehnder interferometer
JP2004288921A (ja) * 2003-03-24 2004-10-14 Mitsubishi Electric Corp 半導体光集積回路
US6801676B1 (en) * 2003-06-24 2004-10-05 Intel Corporation Method and apparatus for phase shifting an optical beam in an optical device with a buffer plug
US6954558B2 (en) * 2003-06-24 2005-10-11 Intel Corporation Method and apparatus for phase shifting an optical beam in an optical device
US7035487B2 (en) * 2004-06-21 2006-04-25 Intel Corporation Phase shifting optical device with dopant barrier
JP4359252B2 (ja) * 2005-03-14 2009-11-04 株式会社日立製作所 波長可変半導体レーザ装置
US7280712B2 (en) * 2005-08-04 2007-10-09 Intel Corporation Method and apparatus for phase shifiting an optical beam in an optical device
JP2007248850A (ja) * 2006-03-16 2007-09-27 Oki Electric Ind Co Ltd マッハツェンダ型半導体素子及びその制御方法
US20070280309A1 (en) * 2006-05-23 2007-12-06 Ansheng Liu Optical waveguide with single sided coplanar contact optical phase modulator
US8450186B2 (en) * 2009-09-25 2013-05-28 Intel Corporation Optical modulator utilizing wafer bonding technology
JP6588851B2 (ja) * 2016-03-24 2019-10-09 日本電信電話株式会社 外部共振器型レーザ光源
JP2018182306A (ja) * 2017-04-17 2018-11-15 浜松ホトニクス株式会社 光半導体素子、及び光半導体素子の駆動方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4111521A (en) * 1977-01-21 1978-09-05 Xerox Corporation Semiconductor light reflector/light transmitter
JPS63229796A (ja) * 1987-03-18 1988-09-26 Fujitsu Ltd 光半導体素子
JP2732604B2 (ja) * 1988-09-06 1998-03-30 株式会社東芝 分布帰還型レーザ
US5200969A (en) * 1991-10-18 1993-04-06 Xerox Corporation Switchable multiple wavelength semiconductor laser

Also Published As

Publication number Publication date
DE69217273T2 (de) 1997-05-28
EP0516044A3 (en) 1992-12-23
JP3198338B2 (ja) 2001-08-13
EP0516044B1 (de) 1997-02-05
JPH04349680A (ja) 1992-12-04
EP0516044A2 (de) 1992-12-02
US5388106A (en) 1995-02-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee