DE69214988T2 - Verfahren zur Niedrigtemperaturherstellung eines Diamanten von hoher Qualität durch chemische Dampfabscheidung - Google Patents

Verfahren zur Niedrigtemperaturherstellung eines Diamanten von hoher Qualität durch chemische Dampfabscheidung

Info

Publication number
DE69214988T2
DE69214988T2 DE69214988T DE69214988T DE69214988T2 DE 69214988 T2 DE69214988 T2 DE 69214988T2 DE 69214988 T DE69214988 T DE 69214988T DE 69214988 T DE69214988 T DE 69214988T DE 69214988 T2 DE69214988 T2 DE 69214988T2
Authority
DE
Germany
Prior art keywords
low temperature
vapor deposition
chemical vapor
high quality
temperature production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69214988T
Other languages
English (en)
Other versions
DE69214988D1 (de
Inventor
Nobuhiro Ota
Naoji Fujimori
Takayuki Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69214988D1 publication Critical patent/DE69214988D1/de
Application granted granted Critical
Publication of DE69214988T2 publication Critical patent/DE69214988T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/103—Diamond-like carbon coating, i.e. DLC
    • Y10S427/106—Utilizing plasma, e.g. corona, glow discharge, cold plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE69214988T 1991-04-01 1992-03-26 Verfahren zur Niedrigtemperaturherstellung eines Diamanten von hoher Qualität durch chemische Dampfabscheidung Expired - Fee Related DE69214988T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3096367A JPH04305096A (ja) 1991-04-01 1991-04-01 高品質気相合成ダイヤモンドの低温形成法

Publications (2)

Publication Number Publication Date
DE69214988D1 DE69214988D1 (de) 1996-12-12
DE69214988T2 true DE69214988T2 (de) 1997-03-06

Family

ID=14163007

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69214988T Expired - Fee Related DE69214988T2 (de) 1991-04-01 1992-03-26 Verfahren zur Niedrigtemperaturherstellung eines Diamanten von hoher Qualität durch chemische Dampfabscheidung

Country Status (4)

Country Link
US (1) US5391409A (de)
EP (1) EP0507497B1 (de)
JP (1) JPH04305096A (de)
DE (1) DE69214988T2 (de)

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US6083570A (en) * 1987-03-31 2000-07-04 Lemelson; Jerome H. Synthetic diamond coatings with intermediate amorphous metal bonding layers and methods of applying such coatings
US7494507B2 (en) * 2000-01-30 2009-02-24 Diamicron, Inc. Articulating diamond-surfaced spinal implants
US6676704B1 (en) 1994-08-12 2004-01-13 Diamicron, Inc. Prosthetic joint component having at least one sintered polycrystalline diamond compact articulation surface and substrate surface topographical features in said polycrystalline diamond compact
US6793681B1 (en) 1994-08-12 2004-09-21 Diamicron, Inc. Prosthetic hip joint having a polycrystalline diamond articulation surface and a plurality of substrate layers
US7678325B2 (en) * 1999-12-08 2010-03-16 Diamicron, Inc. Use of a metal and Sn as a solvent material for the bulk crystallization and sintering of diamond to produce biocompatbile biomedical devices
US6596225B1 (en) 2000-01-31 2003-07-22 Diamicron, Inc. Methods for manufacturing a diamond prosthetic joint component
US5616372A (en) * 1995-06-07 1997-04-01 Syndia Corporation Method of applying a wear-resistant diamond coating to a substrate
US5714202A (en) * 1995-06-07 1998-02-03 Lemelson; Jerome H. Synthetic diamond overlays for gas turbine engine parts having thermal barrier coatings
US5688557A (en) * 1995-06-07 1997-11-18 Lemelson; Jerome H. Method of depositing synthetic diamond coatings with intermediates bonding layers
US5942328A (en) * 1996-02-29 1999-08-24 International Business Machines Corporation Low dielectric constant amorphous fluorinated carbon and method of preparation
US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
US6858080B2 (en) 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
US8591856B2 (en) 1998-05-15 2013-11-26 SCIO Diamond Technology Corporation Single crystal diamond electrochemical electrode
US6582513B1 (en) 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US6312798B1 (en) 1998-09-25 2001-11-06 Seagate Technology Llc Magnetic recording medium having a nitrogen-doped hydrogenated carbon protective overcoat
US7569176B2 (en) * 1999-12-08 2009-08-04 Diamicron, Inc. Method for making a sintered superhard prosthetic joint component
US7556763B2 (en) * 1999-12-08 2009-07-07 Diamicron, Inc. Method of making components for prosthetic joints
US6709463B1 (en) 2000-01-30 2004-03-23 Diamicron, Inc. Prosthetic joint component having at least one solid polycrystalline diamond component
US20100025898A1 (en) * 2000-01-30 2010-02-04 Pope Bill J USE OF Ti AND Nb CEMENTED TiC IN PROSTHETIC JOINTS
US8603181B2 (en) * 2000-01-30 2013-12-10 Dimicron, Inc Use of Ti and Nb cemented in TiC in prosthetic joints
US20040199260A1 (en) * 2000-01-30 2004-10-07 Pope Bill J. Prosthetic joint component having at least one sintered polycrystalline diamond compact articulation surface and substrate surface topographical features in said polycrystalline diamond compact
US20050203630A1 (en) * 2000-01-30 2005-09-15 Pope Bill J. Prosthetic knee joint having at least one diamond articulation surface
CA2412855C (en) 2000-06-15 2009-10-20 Element Six (Pty) Ltd. Thick single crystal diamond layer method for making it and gemstones produced from the layer
CA2412853C (en) 2000-06-15 2009-08-25 Geoffrey Alan Scarsbrook Single crystal diamond prepared by cvd
US20030019106A1 (en) * 2001-04-22 2003-01-30 Diamicron, Inc. Methods for making bearings, races and components thereof having diamond and other superhard surfaces
US6655845B1 (en) * 2001-04-22 2003-12-02 Diamicron, Inc. Bearings, races and components thereof having diamond and other superhard surfaces
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US7866342B2 (en) * 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US6904935B2 (en) * 2002-12-18 2005-06-14 Masco Corporation Of Indiana Valve component with multiple surface layers
US7866343B2 (en) * 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US20050133277A1 (en) * 2003-08-28 2005-06-23 Diamicron, Inc. Superhard mill cutters and related methods
US8449991B2 (en) * 2005-04-07 2013-05-28 Dimicron, Inc. Use of SN and pore size control to improve biocompatibility in polycrystalline diamond compacts
EP2253733B1 (de) * 2005-06-22 2012-03-21 Element Six Limited Hochfarbiger Diamant
US20070026205A1 (en) * 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
GB0813490D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
US8663359B2 (en) 2009-06-26 2014-03-04 Dimicron, Inc. Thick sintered polycrystalline diamond and sintered jewelry
WO2012019112A2 (en) * 2010-08-05 2012-02-09 University Of Houston System Method of producing diamond powder and doped diamonds
US9783885B2 (en) * 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
CN113652746B (zh) * 2021-10-21 2022-01-25 天津本钻科技有限公司 一种提高单晶金刚石质量的方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5930709A (ja) * 1982-08-13 1984-02-18 Toa Nenryo Kogyo Kk 炭素膜及び／又は炭素粒子の製造方法
FR2590808B1 (fr) * 1985-12-04 1989-09-15 Canon Kk Dispositif de soufflage de particules fines
DE3775459D1 (de) * 1986-04-28 1992-02-06 Nissin Electric Co Ltd Verfahren zur herstellung einer diamantenschicht.
KR900008505B1 (ko) * 1987-02-24 1990-11-24 세미콘덕터 에너지 라보라터리 캄파니 리미티드 탄소 석출을 위한 마이크로파 강화 cvd 방법
GB8810111D0 (en) * 1988-04-28 1988-06-02 Jones B L Diamond growth
US4991971A (en) * 1989-02-13 1991-02-12 United Technologies Corporation Fiber optic scatterometer for measuring optical surface roughness
US5094878A (en) * 1989-06-21 1992-03-10 Nippon Soken, Inc. Process for forming diamond film
US5071677A (en) * 1990-05-24 1991-12-10 Houston Advanced Research Center Halogen-assisted chemical vapor deposition of diamond

Also Published As

Publication number Publication date
EP0507497B1 (de) 1996-11-06
DE69214988D1 (de) 1996-12-12
US5391409A (en) 1995-02-21
EP0507497A1 (de) 1992-10-07
JPH04305096A (ja) 1992-10-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: WESER & KOLLEGEN, 81245 MUENCHEN

8339 Ceased/non-payment of the annual fee