DE69212295D1 - Oberflächen-Einebnungs-Verfahren - Google Patents
Oberflächen-Einebnungs-VerfahrenInfo
- Publication number
- DE69212295D1 DE69212295D1 DE69212295T DE69212295T DE69212295D1 DE 69212295 D1 DE69212295 D1 DE 69212295D1 DE 69212295 T DE69212295 T DE 69212295T DE 69212295 T DE69212295 T DE 69212295T DE 69212295 D1 DE69212295 D1 DE 69212295D1
- Authority
- DE
- Germany
- Prior art keywords
- leveling process
- surface leveling
- leveling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/816,458 US5284804A (en) | 1991-12-31 | 1991-12-31 | Global planarization process |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69212295D1 true DE69212295D1 (de) | 1996-08-22 |
DE69212295T2 DE69212295T2 (de) | 1997-02-06 |
Family
ID=25220681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69212295T Expired - Fee Related DE69212295T2 (de) | 1991-12-31 | 1992-12-22 | Oberflächen-Einebnungs-Verfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US5284804A (de) |
EP (1) | EP0549994B1 (de) |
JP (1) | JP3361847B2 (de) |
DE (1) | DE69212295T2 (de) |
TW (1) | TW256934B (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5354695A (en) * | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
US6714625B1 (en) * | 1992-04-08 | 2004-03-30 | Elm Technology Corporation | Lithography device for semiconductor circuit pattern generation |
US6355553B1 (en) * | 1992-07-21 | 2002-03-12 | Sony Corporation | Method of forming a metal plug in a contact hole |
US5372974A (en) * | 1993-03-19 | 1994-12-13 | Micron Semiconductor, Inc. | Approach to avoid buckling in BPSG by using an intermediate barrier layer |
US6690044B1 (en) * | 1993-03-19 | 2004-02-10 | Micron Technology, Inc. | Approach to avoid buckling BPSG by using an intermediate barrier layer |
US5532188A (en) * | 1994-03-30 | 1996-07-02 | Wright; Peter J. | Global planarization of multiple layers |
KR0159388B1 (ko) * | 1995-09-30 | 1999-02-01 | 배순훈 | 평탄화 방법 |
US5885900A (en) * | 1995-11-07 | 1999-03-23 | Lucent Technologies Inc. | Method of global planarization in fabricating integrated circuit devices |
US5837603A (en) * | 1996-05-08 | 1998-11-17 | Harris Corporation | Planarization method by use of particle dispersion and subsequent thermal flow |
US6551857B2 (en) * | 1997-04-04 | 2003-04-22 | Elm Technology Corporation | Three dimensional structure integrated circuits |
US5915167A (en) * | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
KR20010024096A (ko) * | 1997-09-18 | 2001-03-26 | 메르다드 엠. 모슬레히 | 고성능 집적 회로 배선 제조 방법 및 장치 |
US6335288B1 (en) * | 2000-08-24 | 2002-01-01 | Applied Materials, Inc. | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD |
AU2003255254A1 (en) * | 2002-08-08 | 2004-02-25 | Glenn J. Leedy | Vertical system integration |
KR100587635B1 (ko) * | 2003-06-10 | 2006-06-07 | 주식회사 하이닉스반도체 | 반도체소자의 제조 방법 |
US20090074962A1 (en) * | 2007-09-14 | 2009-03-19 | Asml Netherlands B.V. | Method for the protection of an optical element of a lithographic apparatus and device manufacturing method |
JP2014053502A (ja) * | 2012-09-07 | 2014-03-20 | Toshiba Corp | 半導体装置の製造方法 |
JP2023002853A (ja) * | 2019-12-12 | 2023-01-11 | Agc株式会社 | 積層基板、及びその製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4655874A (en) * | 1985-07-26 | 1987-04-07 | Advanced Micro Devices, Inc. | Process for smoothing a non-planar surface |
US4676868A (en) * | 1986-04-23 | 1987-06-30 | Fairchild Semiconductor Corporation | Method for planarizing semiconductor substrates |
US4775550A (en) * | 1986-06-03 | 1988-10-04 | Intel Corporation | Surface planarization method for VLSI technology |
US4708770A (en) * | 1986-06-19 | 1987-11-24 | Lsi Logic Corporation | Planarized process for forming vias in silicon wafers |
US4732658A (en) * | 1986-12-03 | 1988-03-22 | Honeywell Inc. | Planarization of silicon semiconductor devices |
US4810335A (en) * | 1987-01-20 | 1989-03-07 | Siemens Aktiengesellschaft | Method for monitoring etching processes |
US4983545A (en) * | 1987-03-20 | 1991-01-08 | Nec Corporation | Planarization of dielectric films on integrated circuits |
US4839311A (en) * | 1987-08-14 | 1989-06-13 | National Semiconductor Corporation | Etch back detection |
JPH063804B2 (ja) * | 1988-01-21 | 1994-01-12 | シャープ株式会社 | 半導体装置製造方法 |
KR920000708B1 (ko) * | 1988-07-22 | 1992-01-20 | 현대전자산업 주식회사 | 포토레지스트 에치백 기술을 이용한 트렌치 캐패시터 형성방법 |
US4962063A (en) * | 1988-11-10 | 1990-10-09 | Applied Materials, Inc. | Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing |
US5183781A (en) * | 1990-01-12 | 1993-02-02 | Nec Corporation | Method of manufacturing semiconductor device |
JP2518435B2 (ja) * | 1990-01-29 | 1996-07-24 | ヤマハ株式会社 | 多層配線形成法 |
US5143867A (en) * | 1991-02-13 | 1992-09-01 | International Business Machines Corporation | Method for depositing interconnection metallurgy using low temperature alloy processes |
-
1991
- 1991-12-31 US US07/816,458 patent/US5284804A/en not_active Expired - Lifetime
-
1992
- 1992-12-22 EP EP92121777A patent/EP0549994B1/de not_active Expired - Lifetime
- 1992-12-22 DE DE69212295T patent/DE69212295T2/de not_active Expired - Fee Related
-
1993
- 1993-01-04 JP JP02957193A patent/JP3361847B2/ja not_active Expired - Fee Related
- 1993-04-21 TW TW082103037A patent/TW256934B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5284804A (en) | 1994-02-08 |
JPH06120180A (ja) | 1994-04-28 |
EP0549994A2 (de) | 1993-07-07 |
EP0549994B1 (de) | 1996-07-17 |
DE69212295T2 (de) | 1997-02-06 |
TW256934B (de) | 1995-09-11 |
EP0549994A3 (en) | 1993-07-28 |
JP3361847B2 (ja) | 2003-01-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |