DE69205009T2 - Verfahren und Vorrichtung für Beschichtung mittels Katodenzerstäubung mit Verwendung Maschine-lesbarer Indizes von Target-Anordnung getragen worden. - Google Patents
Verfahren und Vorrichtung für Beschichtung mittels Katodenzerstäubung mit Verwendung Maschine-lesbarer Indizes von Target-Anordnung getragen worden.Info
- Publication number
- DE69205009T2 DE69205009T2 DE69205009T DE69205009T DE69205009T2 DE 69205009 T2 DE69205009 T2 DE 69205009T2 DE 69205009 T DE69205009 T DE 69205009T DE 69205009 T DE69205009 T DE 69205009T DE 69205009 T2 DE69205009 T2 DE 69205009T2
- Authority
- DE
- Germany
- Prior art keywords
- target
- medium
- information
- sputtering
- sputter coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 83
- 238000000034 method Methods 0.000 title claims description 49
- 238000000576 coating method Methods 0.000 title claims description 6
- 239000011248 coating agent Substances 0.000 title claims description 5
- 239000000463 material Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 10
- 230000002596 correlated effect Effects 0.000 claims description 4
- 230000001276 controlling effect Effects 0.000 claims description 3
- 238000005477 sputtering target Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 8
- 238000001816 cooling Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 239000000110 cooling liquid Substances 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 102000006947 Histones Human genes 0.000 description 1
- 108010033040 Histones Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/791,415 US5284561A (en) | 1991-11-13 | 1991-11-13 | Method and apparatus for sputter coating employing machine readable indicia carried by target assembly |
| PCT/US1992/009807 WO1993010276A1 (en) | 1991-11-13 | 1992-11-12 | Method and apparatus for sputter coating employing machine readable indicia carried by target assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69205009D1 DE69205009D1 (de) | 1995-10-26 |
| DE69205009T2 true DE69205009T2 (de) | 1996-05-30 |
Family
ID=25153645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69205009T Expired - Fee Related DE69205009T2 (de) | 1991-11-13 | 1992-11-12 | Verfahren und Vorrichtung für Beschichtung mittels Katodenzerstäubung mit Verwendung Maschine-lesbarer Indizes von Target-Anordnung getragen worden. |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US5284561A (enExample) |
| EP (1) | EP0612358B1 (enExample) |
| KR (1) | KR100284214B1 (enExample) |
| AU (1) | AU3135693A (enExample) |
| CA (1) | CA2122720A1 (enExample) |
| DE (1) | DE69205009T2 (enExample) |
| TW (1) | TW238340B (enExample) |
| WO (1) | WO1993010276A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020128802A1 (de) | 2020-11-02 | 2022-05-05 | VON ARDENNE Asset GmbH & Co. KG | Verfahren, Steuervorrichtung und Speichermedium |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6689254B1 (en) | 1990-10-31 | 2004-02-10 | Tokyo Electron Limited | Sputtering apparatus with isolated coolant and sputtering target therefor |
| US5284561A (en) * | 1991-11-13 | 1994-02-08 | Materials Research Corporation | Method and apparatus for sputter coating employing machine readable indicia carried by target assembly |
| US5490914A (en) * | 1995-02-14 | 1996-02-13 | Sony Corporation | High utilization sputtering target for cathode assembly |
| US5721263A (en) * | 1993-06-07 | 1998-02-24 | Takeda Chemical Industries, Ltd. | Pharmaceutical composition for angiotensin II-mediated diseases |
| US6221217B1 (en) * | 1995-07-10 | 2001-04-24 | Cvc, Inc. | Physical vapor deposition system having reduced thickness backing plate |
| US6416635B1 (en) | 1995-07-24 | 2002-07-09 | Tokyo Electron Limited | Method and apparatus for sputter coating with variable target to substrate spacing |
| US5830336A (en) * | 1995-12-05 | 1998-11-03 | Minnesota Mining And Manufacturing Company | Sputtering of lithium |
| US5846389A (en) * | 1997-05-14 | 1998-12-08 | Sony Corporation | Sputtering target protection device |
| US6348113B1 (en) | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
| JP2000169961A (ja) * | 1998-12-02 | 2000-06-20 | Matsushita Electric Ind Co Ltd | スパッタ装置 |
| DE19939774C2 (de) * | 1999-08-21 | 2001-06-28 | Rofin Sinar Laser Gmbh | Festkörperlaser (Scheibenlaser) mit direktem Kontakt des aktiven Mediums zu einer Kühlmittelflüssigkeit |
| US6350317B1 (en) | 1999-12-30 | 2002-02-26 | Lam Research Corporation | Linear drive system for use in a plasma processing system |
| US9782949B2 (en) | 2008-05-30 | 2017-10-10 | Corning Incorporated | Glass laminated articles and layered articles |
| DE102014000030A1 (de) * | 2014-01-05 | 2015-07-09 | Oerlikon Trading Ag | Überwachungsmethode zur richtigen Bestückung von Beschichtungsanlagen |
| US10153143B2 (en) | 2014-03-14 | 2018-12-11 | Applied Materials, Inc. | Smart chamber and smart chamber components |
| TW201544615A (zh) * | 2014-05-30 | 2015-12-01 | Tosoh Smd Inc | 射頻辨識金屬內安裝以及用於濺鍍標靶之隔離 |
| WO2018140369A1 (en) * | 2017-01-25 | 2018-08-02 | Materion Corporation | Sputtering target having rfid information |
| BE1027175B1 (nl) * | 2019-04-05 | 2020-11-03 | Soleras Advanced Coatings Bv | Magneetstaaf met aangehechte sensor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4166783A (en) * | 1978-04-17 | 1979-09-04 | Varian Associates, Inc. | Deposition rate regulation by computer control of sputtering systems |
| US4508612A (en) * | 1984-03-07 | 1985-04-02 | International Business Machines Corporation | Shield for improved magnetron sputter deposition into surface recesses |
| FR2600450B1 (fr) * | 1986-06-19 | 1988-08-26 | Pechiney Aluminium | Procede de marquage individuel des anodes precuites pour la production electrolytique d'aluminium |
| US4902398A (en) * | 1988-04-27 | 1990-02-20 | American Thim Film Laboratories, Inc. | Computer program for vacuum coating systems |
| US5126028A (en) * | 1989-04-17 | 1992-06-30 | Materials Research Corporation | Sputter coating process control method and apparatus |
| US5130005A (en) * | 1990-10-31 | 1992-07-14 | Materials Research Corporation | Magnetron sputter coating method and apparatus with rotating magnet cathode |
| US4957605A (en) * | 1989-04-17 | 1990-09-18 | Materials Research Corporation | Method and apparatus for sputter coating stepped wafers |
| US5009765A (en) * | 1990-05-17 | 1991-04-23 | Tosoh Smd, Inc. | Sputter target design |
| US5284561A (en) * | 1991-11-13 | 1994-02-08 | Materials Research Corporation | Method and apparatus for sputter coating employing machine readable indicia carried by target assembly |
-
1991
- 1991-11-13 US US07/791,415 patent/US5284561A/en not_active Expired - Lifetime
-
1992
- 1992-11-03 TW TW081108730A patent/TW238340B/zh active
- 1992-11-12 KR KR1019940701630A patent/KR100284214B1/ko not_active Expired - Fee Related
- 1992-11-12 DE DE69205009T patent/DE69205009T2/de not_active Expired - Fee Related
- 1992-11-12 EP EP92925211A patent/EP0612358B1/en not_active Expired - Lifetime
- 1992-11-12 WO PCT/US1992/009807 patent/WO1993010276A1/en not_active Ceased
- 1992-11-12 AU AU31356/93A patent/AU3135693A/en not_active Abandoned
- 1992-11-12 CA CA002122720A patent/CA2122720A1/en not_active Abandoned
-
1993
- 1993-12-10 US US08/164,759 patent/US5449445A/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020128802A1 (de) | 2020-11-02 | 2022-05-05 | VON ARDENNE Asset GmbH & Co. KG | Verfahren, Steuervorrichtung und Speichermedium |
| DE102020128802B4 (de) | 2020-11-02 | 2025-03-20 | VON ARDENNE Asset GmbH & Co. KG | Verfahren, Steuervorrichtung und Speichermedium |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0612358B1 (en) | 1995-09-20 |
| DE69205009D1 (de) | 1995-10-26 |
| US5284561A (en) | 1994-02-08 |
| EP0612358A1 (en) | 1994-08-31 |
| WO1993010276A1 (en) | 1993-05-27 |
| JPH07501105A (ja) | 1995-02-02 |
| AU3135693A (en) | 1993-06-15 |
| KR100284214B1 (ko) | 2001-03-02 |
| US5449445A (en) | 1995-09-12 |
| CA2122720A1 (en) | 1993-05-27 |
| TW238340B (enExample) | 1995-01-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |