DE69202756D1 - Stromzuführungssystem für eine integrierte Halbleiterlaser-Schaltung. - Google Patents

Stromzuführungssystem für eine integrierte Halbleiterlaser-Schaltung.

Info

Publication number
DE69202756D1
DE69202756D1 DE69202756T DE69202756T DE69202756D1 DE 69202756 D1 DE69202756 D1 DE 69202756D1 DE 69202756 T DE69202756 T DE 69202756T DE 69202756 T DE69202756 T DE 69202756T DE 69202756 D1 DE69202756 D1 DE 69202756D1
Authority
DE
Germany
Prior art keywords
power supply
supply system
semiconductor laser
integrated semiconductor
laser circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69202756T
Other languages
English (en)
Other versions
DE69202756T2 (de
Inventor
Bernard Groussin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
Thomson SCF Semiconducteurs Specifiques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson SCF Semiconducteurs Specifiques filed Critical Thomson SCF Semiconducteurs Specifiques
Publication of DE69202756D1 publication Critical patent/DE69202756D1/de
Application granted granted Critical
Publication of DE69202756T2 publication Critical patent/DE69202756T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42Arrays of surface emitting lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69202756T 1991-12-10 1992-12-01 Stromzuführungssystem für eine integrierte Halbleiterlaser-Schaltung. Expired - Fee Related DE69202756T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9115269A FR2684811B1 (fr) 1991-12-10 1991-12-10 Systeme d'alimentation electrique d'un circuit integre de lasers semiconducteurs.

Publications (2)

Publication Number Publication Date
DE69202756D1 true DE69202756D1 (de) 1995-07-06
DE69202756T2 DE69202756T2 (de) 1995-10-19

Family

ID=9419851

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69202756T Expired - Fee Related DE69202756T2 (de) 1991-12-10 1992-12-01 Stromzuführungssystem für eine integrierte Halbleiterlaser-Schaltung.

Country Status (5)

Country Link
US (1) US5309470A (de)
EP (1) EP0546889B1 (de)
JP (1) JPH0613708A (de)
DE (1) DE69202756T2 (de)
FR (1) FR2684811B1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19838518A1 (de) * 1998-08-25 2000-03-02 Bosch Gmbh Robert Anordnung
US6816528B1 (en) 1998-12-30 2004-11-09 Xerox Corporation Method and structure for nitride based laser diode arrays on a conducting substrate
DE10208463B4 (de) * 2002-02-27 2012-04-05 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Verfahren zu deren Herstellung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5012427A (en) * 1988-01-30 1991-04-30 Kabushiki Kaisha Toshiba Semiconductor integrated circuit and method of manufacturing the same
US4881237A (en) * 1988-08-26 1989-11-14 Massachusetts Institute Of Technology Hybrid two-dimensional surface-emitting laser arrays
FR2639150B1 (fr) * 1988-11-15 1991-01-25 Thomson Hybrides Microondes Dispositif optoelectronique de puissance et son procede de realisation
US5001719A (en) * 1989-11-21 1991-03-19 The United States Of America As Represented By The Secretary Of The Army Laser diode array
US5159603A (en) * 1991-06-05 1992-10-27 United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Quantum well, beam deflecting surface emitting lasers

Also Published As

Publication number Publication date
EP0546889A1 (de) 1993-06-16
US5309470A (en) 1994-05-03
DE69202756T2 (de) 1995-10-19
FR2684811B1 (fr) 1994-01-28
EP0546889B1 (de) 1995-05-31
FR2684811A1 (fr) 1993-06-11
JPH0613708A (ja) 1994-01-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee