DE69131793D1 - Substrat für supraleitende Einrichtungen - Google Patents

Substrat für supraleitende Einrichtungen

Info

Publication number
DE69131793D1
DE69131793D1 DE69131793T DE69131793T DE69131793D1 DE 69131793 D1 DE69131793 D1 DE 69131793D1 DE 69131793 T DE69131793 T DE 69131793T DE 69131793 T DE69131793 T DE 69131793T DE 69131793 D1 DE69131793 D1 DE 69131793D1
Authority
DE
Germany
Prior art keywords
substrate
superconducting devices
superconducting
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69131793T
Other languages
English (en)
Other versions
DE69131793T2 (de
Inventor
Hidenori Nakanishi
Keizo Harada
Hideo Itozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3220907A external-priority patent/JPH05251751A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69131793D1 publication Critical patent/DE69131793D1/de
Publication of DE69131793T2 publication Critical patent/DE69131793T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE69131793T 1990-08-08 1991-08-08 Substrat für supraleitende Einrichtungen Expired - Fee Related DE69131793T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP20978090 1990-08-08
JP20978190 1990-08-08
JP3220907A JPH05251751A (ja) 1990-08-08 1991-08-06 超電導デバイス用基板

Publications (2)

Publication Number Publication Date
DE69131793D1 true DE69131793D1 (de) 1999-12-30
DE69131793T2 DE69131793T2 (de) 2000-04-27

Family

ID=27329054

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69131793T Expired - Fee Related DE69131793T2 (de) 1990-08-08 1991-08-08 Substrat für supraleitende Einrichtungen

Country Status (2)

Country Link
EP (1) EP0471292B1 (de)
DE (1) DE69131793T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8809548D0 (en) * 1988-04-22 1988-05-25 Somekh R E Epitaxial barrier layers in thin film technology
EP0341502A3 (de) * 1988-05-07 1989-12-27 Fujitsu Limited Kryoelektronische Einrichtung mit einem keramischen Supraleiter
EP0364068A3 (de) * 1988-10-14 1990-05-30 Westinghouse Electric Corporation Methode zur Abscheidung eines oxidischen Supraleiters auf ein Substrat
DE69030365T2 (de) * 1989-12-22 1997-10-23 Sumitomo Electric Industries Verfahren zur Herstellung eines supraleitfähigen Mikrowellenbauelements

Also Published As

Publication number Publication date
DE69131793T2 (de) 2000-04-27
EP0471292A3 (en) 1992-06-03
EP0471292B1 (de) 1999-11-24
EP0471292A2 (de) 1992-02-19

Similar Documents

Publication Publication Date Title
DE69430765T2 (de) Eingebettetes Substrat für integrierte Schaltungsmodule
DE3855424D1 (de) Haltevorrichtung für Substratscheiben
DE69017287D1 (de) Durchsichtiges Substrat.
DE69219535D1 (de) Behälter für Halbleiter-Wafer
DE69634711D1 (de) VBB-Referenz für spannungsgepümptes Substrat
DE69128264T2 (de) Kühlvorrichtung für ein Wafer
DE68925156D1 (de) Integrierte Halbleiterschaltung für neurales Netzwerk
DE69637635D1 (de) Filmträger für Halbleiter
DE69128876T2 (de) Dünnfilm-Halbleitervorrichtung
DE69127515D1 (de) Substratvorspannungsgenerator für Halbleiteranordnungen
DE3883873D1 (de) Trägerelement für Halbleiterapparat.
DE68928087D1 (de) Substratsstruktur für zusammengesetztes Halbleiterbauelement
FI925404A0 (fi) Applikator foer att rikta belaeggningsmaterial pao ett substrat
FI883565A (fi) Anordning foer kontroll av egenskaper hos en film pao ett substrat.
DE69107171D1 (de) Trocknungsverfahren und -vorrichtung für ein beschichtetes Substrat.
DE69107170D1 (de) Trocknungsverfahren und -vorrichtungen für ein beschichtetes Substrat.
DE69400142D1 (de) Trägerkassette für Siliziumscheiben
DE69203252D1 (de) Gesteuertes Burn-in-System für Halbleiterbauelemente.
DE69219509D1 (de) Halbleiteranordnung mit Substrat
DE69103748D1 (de) Trägerkassette für Halbleiterscheiben.
DE69118488D1 (de) Substrat mit aktiver Matrix
DE69119709D1 (de) Substrat für Matrizenanordnung
DE69115761D1 (de) Behandlungseinrichtung für Halbleiter
DE69029059D1 (de) Substrat aus Verbundwerkstoff
DE68924321D1 (de) Beschichtungsvorrichtung für Gewebe.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee