DE69128559D1 - Speicherkarte - Google Patents
SpeicherkarteInfo
- Publication number
- DE69128559D1 DE69128559D1 DE69128559T DE69128559T DE69128559D1 DE 69128559 D1 DE69128559 D1 DE 69128559D1 DE 69128559 T DE69128559 T DE 69128559T DE 69128559 T DE69128559 T DE 69128559T DE 69128559 D1 DE69128559 D1 DE 69128559D1
- Authority
- DE
- Germany
- Prior art keywords
- memory card
- card
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Dram (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12475390 | 1990-05-15 | ||
JP12614390 | 1990-05-16 | ||
JP13322390 | 1990-05-23 | ||
JP13897490 | 1990-05-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69128559D1 true DE69128559D1 (de) | 1998-02-12 |
DE69128559T2 DE69128559T2 (de) | 1998-06-04 |
Family
ID=27471060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69128559T Expired - Fee Related DE69128559T2 (de) | 1990-05-15 | 1991-05-15 | Speicherkarte |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0457310B1 (de) |
KR (1) | KR100274704B1 (de) |
DE (1) | DE69128559T2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2700040B1 (fr) * | 1992-12-31 | 1995-02-17 | Gemplus Card Int | Carte à puce avec données et programmes protégés contre le vieillissement. |
US6247138B1 (en) | 1997-06-12 | 2001-06-12 | Fujitsu Limited | Timing signal generating circuit, semiconductor integrated circuit device and semiconductor integrated circuit system to which the timing signal generating circuit is applied, and signal transmission system |
JP2006012357A (ja) * | 2004-06-29 | 2006-01-12 | Fujitsu Ltd | メモリ装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5683888A (en) * | 1979-12-11 | 1981-07-08 | Nec Corp | Memory circuit |
JPH01267896A (ja) * | 1988-04-19 | 1989-10-25 | Toshiba Corp | 半導体メモリ |
JPH0778991B2 (ja) * | 1988-07-26 | 1995-08-23 | 株式会社東芝 | 半導体メモリ |
-
1991
- 1991-05-15 DE DE69128559T patent/DE69128559T2/de not_active Expired - Fee Related
- 1991-05-15 EP EP91107882A patent/EP0457310B1/de not_active Expired - Lifetime
- 1991-05-15 KR KR1019910007815A patent/KR100274704B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0457310B1 (de) | 1998-01-07 |
KR910020558A (ko) | 1991-12-20 |
EP0457310A2 (de) | 1991-11-21 |
KR100274704B1 (ko) | 2000-12-15 |
DE69128559T2 (de) | 1998-06-04 |
EP0457310A3 (en) | 1991-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |