DE69128052T2 - Messung von Halbleiterparametern im Tiefsttemperaturbereich mit einer Federkontaktsonde - Google Patents

Messung von Halbleiterparametern im Tiefsttemperaturbereich mit einer Federkontaktsonde

Info

Publication number
DE69128052T2
DE69128052T2 DE69128052T DE69128052T DE69128052T2 DE 69128052 T2 DE69128052 T2 DE 69128052T2 DE 69128052 T DE69128052 T DE 69128052T DE 69128052 T DE69128052 T DE 69128052T DE 69128052 T2 DE69128052 T2 DE 69128052T2
Authority
DE
Germany
Prior art keywords
contact
sample
probe
spring
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69128052T
Other languages
German (de)
English (en)
Other versions
DE69128052D1 (de
Inventor
Men Chee Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon TI Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon TI Systems Inc filed Critical Raytheon TI Systems Inc
Application granted granted Critical
Publication of DE69128052D1 publication Critical patent/DE69128052D1/de
Publication of DE69128052T2 publication Critical patent/DE69128052T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • H10P74/00—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2862—Chambers or ovens; Tanks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Environmental & Geological Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Tests Of Electronic Circuits (AREA)
DE69128052T 1990-08-10 1991-08-02 Messung von Halbleiterparametern im Tiefsttemperaturbereich mit einer Federkontaktsonde Expired - Fee Related DE69128052T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/565,581 US5309088A (en) 1990-08-10 1990-08-10 Measurement of semiconductor parameters at cryogenic temperatures using a spring contact probe

Publications (2)

Publication Number Publication Date
DE69128052D1 DE69128052D1 (de) 1997-12-04
DE69128052T2 true DE69128052T2 (de) 1998-05-14

Family

ID=24259258

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128052T Expired - Fee Related DE69128052T2 (de) 1990-08-10 1991-08-02 Messung von Halbleiterparametern im Tiefsttemperaturbereich mit einer Federkontaktsonde

Country Status (6)

Country Link
US (2) US5309088A (OSRAM)
EP (1) EP0470521B1 (OSRAM)
JP (1) JPH0697246A (OSRAM)
KR (1) KR100189595B1 (OSRAM)
DE (1) DE69128052T2 (OSRAM)
TW (1) TW212828B (OSRAM)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380751B2 (en) 1992-06-11 2002-04-30 Cascade Microtech, Inc. Wafer probe station having environment control enclosure
US6313649B2 (en) 1992-06-11 2001-11-06 Cascade Microtech, Inc. Wafer probe station having environment control enclosure
US6002263A (en) 1997-06-06 1999-12-14 Cascade Microtech, Inc. Probe station having inner and outer shielding
US5929652A (en) * 1997-09-02 1999-07-27 Midwest Research Institute Apparatus for measuring minority carrier lifetimes in semiconductor materials
US6275060B1 (en) 1997-09-02 2001-08-14 Midwest Research Institute Apparatus and method for measuring minority carrier lifetimes in semiconductor materials
US6424141B1 (en) 2000-07-13 2002-07-23 The Micromanipulator Company, Inc. Wafer probe station
US6700397B2 (en) 2000-07-13 2004-03-02 The Micromanipulator Company, Inc. Triaxial probe assembly
US6914423B2 (en) 2000-09-05 2005-07-05 Cascade Microtech, Inc. Probe station
EP1407213A2 (en) * 2000-10-24 2004-04-14 L'air Liquide Methods and apparatus for recycling cryogenic liquid or gas from test chamber
EP1432546A4 (en) 2001-08-31 2006-06-07 Cascade Microtech Inc OPTICAL TESTING APPARATUS
US7250626B2 (en) 2003-10-22 2007-07-31 Cascade Microtech, Inc. Probe testing structure
KR20050122972A (ko) * 2004-06-26 2005-12-29 삼성전자주식회사 유기 발광소자 분석방법
EP2159580B1 (en) * 2008-08-26 2015-10-07 Lake Shore Cryotronics, Inc. Probe tip
US8319503B2 (en) 2008-11-24 2012-11-27 Cascade Microtech, Inc. Test apparatus for measuring a characteristic of a device under test
US10720372B2 (en) 2018-10-26 2020-07-21 Microsoft Technology Licensing, Llc Conduction cooling for circuit boards
EP4439101A1 (en) * 2023-03-31 2024-10-02 kiutra GmbH Apparatus for testing and/or operating electronic devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3710251A (en) * 1971-04-07 1973-01-09 Collins Radio Co Microelectric heat exchanger pedestal
JPS5492065A (en) * 1977-12-29 1979-07-20 Fuji Electric Co Ltd Measuring method for manufacturing process evaluation of semiconductor device
US4167791A (en) * 1978-01-25 1979-09-11 Banavar Jayanth R Non-volatile information storage arrays of cryogenic pin diodes
US4177093A (en) * 1978-06-27 1979-12-04 Exxon Research & Engineering Co. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide
USRE32457E (en) * 1981-09-30 1987-07-07 Rca Corporation Scanning capacitance microscope
JP2690908B2 (ja) * 1987-09-25 1997-12-17 株式会社日立製作所 表面計測装置
JPH02205046A (ja) * 1989-02-03 1990-08-14 Hitachi Ltd 半導体表面計則方法およびその装置
US5103183A (en) * 1990-01-26 1992-04-07 Rockwell International Corporation Method of profiling compensator concentration in semiconductors
US5023561A (en) * 1990-05-04 1991-06-11 Solid State Measurements, Inc. Apparatus and method for non-invasive measurement of electrical properties of a dielectric layer in a semiconductor wafer

Also Published As

Publication number Publication date
JPH0697246A (ja) 1994-04-08
US5459408A (en) 1995-10-17
US5309088A (en) 1994-05-03
KR920005292A (ko) 1992-03-28
KR100189595B1 (ko) 1999-06-01
EP0470521B1 (en) 1997-10-29
TW212828B (OSRAM) 1993-09-11
EP0470521A2 (en) 1992-02-12
EP0470521A3 (OSRAM) 1994-03-30
DE69128052D1 (de) 1997-12-04

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: RAYTHEON TI SYSTEMS, INC., LEWISVILLE, TEX., US

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RAYTHEON CO. (N.D.GES.D. STAATES DELAWARE), LEXING

8339 Ceased/non-payment of the annual fee