DE69126087D1 - Dynamischer ram-speicher, in welchem die zeitabstimmung des endes des auslesens von daten früher ist als herkömmlich - Google Patents
Dynamischer ram-speicher, in welchem die zeitabstimmung des endes des auslesens von daten früher ist als herkömmlichInfo
- Publication number
- DE69126087D1 DE69126087D1 DE69126087T DE69126087T DE69126087D1 DE 69126087 D1 DE69126087 D1 DE 69126087D1 DE 69126087 T DE69126087 T DE 69126087T DE 69126087 T DE69126087 T DE 69126087T DE 69126087 D1 DE69126087 D1 DE 69126087D1
- Authority
- DE
- Germany
- Prior art keywords
- earlier
- timing
- reading
- data
- dynamic ram
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2083758A JPH03283179A (ja) | 1990-03-30 | 1990-03-30 | 半導体記憶装置 |
PCT/JP1991/000424 WO1991015852A1 (en) | 1990-03-30 | 1991-03-30 | Dynamic ram in which timing of end of data read out is earlier than conventional |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69126087D1 true DE69126087D1 (de) | 1997-06-19 |
DE69126087T2 DE69126087T2 (de) | 1997-08-28 |
Family
ID=13811464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69126087T Expired - Fee Related DE69126087T2 (de) | 1990-03-30 | 1991-03-30 | Dynamischer ram-speicher, in welchem die zeitabstimmung des endes des auslesens von daten früher ist als herkömmlich |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0481084B1 (de) |
JP (1) | JPH03283179A (de) |
KR (1) | KR960000891B1 (de) |
DE (1) | DE69126087T2 (de) |
WO (1) | WO1991015852A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR930008857A (ko) * | 1991-10-25 | 1993-05-22 | 김광호 | 데이타 전송 회로 |
EP0579862A1 (de) * | 1992-07-24 | 1994-01-26 | Siemens Aktiengesellschaft | Integrierte Halbleiterspeicheranordnung |
JP2663838B2 (ja) * | 1993-07-27 | 1997-10-15 | 日本電気株式会社 | 半導体集積回路装置 |
JPH07147086A (ja) * | 1993-11-02 | 1995-06-06 | Nec Corp | ダイナミック型半導体記憶装置 |
US5742544A (en) | 1994-04-11 | 1998-04-21 | Mosaid Technologies Incorporated | Wide databus architecture |
JP2817836B2 (ja) * | 1995-11-30 | 1998-10-30 | 日本電気株式会社 | 半導体メモリ装置 |
JP4748828B2 (ja) * | 1999-06-22 | 2011-08-17 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP5571871B2 (ja) * | 2007-10-30 | 2014-08-13 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57167186A (en) * | 1981-04-08 | 1982-10-14 | Nec Corp | Memory circuit |
JPS63209094A (ja) * | 1987-02-25 | 1988-08-30 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2638046B2 (ja) * | 1988-03-14 | 1997-08-06 | 三菱電機株式会社 | I/o線負荷回路 |
JP2633645B2 (ja) * | 1988-09-13 | 1997-07-23 | 株式会社東芝 | 半導体メモリ装置 |
JPH02146180A (ja) * | 1988-11-28 | 1990-06-05 | Nec Corp | 半導体メモリ装置 |
-
1990
- 1990-03-30 JP JP2083758A patent/JPH03283179A/ja active Pending
-
1991
- 1991-03-30 DE DE69126087T patent/DE69126087T2/de not_active Expired - Fee Related
- 1991-03-30 EP EP91906569A patent/EP0481084B1/de not_active Expired - Lifetime
- 1991-03-30 KR KR1019910701732A patent/KR960000891B1/ko not_active IP Right Cessation
- 1991-03-30 WO PCT/JP1991/000424 patent/WO1991015852A1/ja active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO1991015852A1 (en) | 1991-10-17 |
EP0481084B1 (de) | 1997-05-14 |
KR920701978A (ko) | 1992-08-12 |
EP0481084A1 (de) | 1992-04-22 |
EP0481084A4 (en) | 1993-07-21 |
DE69126087T2 (de) | 1997-08-28 |
KR960000891B1 (ko) | 1996-01-13 |
JPH03283179A (ja) | 1991-12-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP |
|
8339 | Ceased/non-payment of the annual fee |