DE69124476T2 - Ultraschnelle elektronische Schalteinrichtung - Google Patents

Ultraschnelle elektronische Schalteinrichtung

Info

Publication number
DE69124476T2
DE69124476T2 DE69124476T DE69124476T DE69124476T2 DE 69124476 T2 DE69124476 T2 DE 69124476T2 DE 69124476 T DE69124476 T DE 69124476T DE 69124476 T DE69124476 T DE 69124476T DE 69124476 T2 DE69124476 T2 DE 69124476T2
Authority
DE
Germany
Prior art keywords
switching device
electronic switching
ultrafast electronic
ultrafast
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69124476T
Other languages
English (en)
Other versions
DE69124476D1 (de
Inventor
Mikio Mukai
Akihiko Ochiai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69124476D1 publication Critical patent/DE69124476D1/de
Publication of DE69124476T2 publication Critical patent/DE69124476T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/437—Superconductor materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
DE69124476T 1990-11-30 1991-10-30 Ultraschnelle elektronische Schalteinrichtung Expired - Fee Related DE69124476T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02338350A JP3092160B2 (ja) 1990-11-30 1990-11-30 高速素子及び高速メモリ素子

Publications (2)

Publication Number Publication Date
DE69124476D1 DE69124476D1 (de) 1997-03-13
DE69124476T2 true DE69124476T2 (de) 1997-08-14

Family

ID=18317325

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124476T Expired - Fee Related DE69124476T2 (de) 1990-11-30 1991-10-30 Ultraschnelle elektronische Schalteinrichtung

Country Status (5)

Country Link
EP (1) EP0487922B1 (de)
JP (1) JP3092160B2 (de)
KR (1) KR920010985A (de)
DE (1) DE69124476T2 (de)
TW (1) TW303514B (de)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038885A (ja) * 1983-08-11 1985-02-28 Nippon Telegr & Teleph Corp <Ntt> 縦形電界効果トランジスタ及びその製法
JPS6257260A (ja) * 1985-09-06 1987-03-12 Hitachi Ltd 超電導トランジスタ
JPS62131588A (ja) * 1985-12-04 1987-06-13 Hitachi Ltd 超伝導トランジスタの製法
KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
JPH01308086A (ja) * 1988-06-07 1989-12-12 Fujitsu Ltd 固体電子装置

Also Published As

Publication number Publication date
EP0487922A2 (de) 1992-06-03
JPH04206975A (ja) 1992-07-28
EP0487922B1 (de) 1997-01-29
TW303514B (de) 1997-04-21
EP0487922A3 (en) 1992-10-21
JP3092160B2 (ja) 2000-09-25
KR920010985A (ko) 1992-06-27
DE69124476D1 (de) 1997-03-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee