DE69124411D1 - Vorrichtung zur Kontrolle der Kontaminierung in einen mit einer Spannung betriebenen Elektroden versehenen Gerät - Google Patents

Vorrichtung zur Kontrolle der Kontaminierung in einen mit einer Spannung betriebenen Elektroden versehenen Gerät

Info

Publication number
DE69124411D1
DE69124411D1 DE69124411T DE69124411T DE69124411D1 DE 69124411 D1 DE69124411 D1 DE 69124411D1 DE 69124411 T DE69124411 T DE 69124411T DE 69124411 T DE69124411 T DE 69124411T DE 69124411 D1 DE69124411 D1 DE 69124411D1
Authority
DE
Germany
Prior art keywords
contamination
checking
voltage
device provided
operated electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69124411T
Other languages
English (en)
Other versions
DE69124411T2 (de
Inventor
Jerome J Cuomo
Michael V Garzioso
Charles R Guarnieri
Kurt L Haller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69124411D1 publication Critical patent/DE69124411D1/de
Application granted granted Critical
Publication of DE69124411T2 publication Critical patent/DE69124411T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE69124411T 1990-04-25 1991-03-23 Vorrichtung zur Kontrolle der Kontaminierung in einen mit einer Spannung betriebenen Elektroden versehenen Gerät Expired - Lifetime DE69124411T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/514,916 US5298720A (en) 1990-04-25 1990-04-25 Method and apparatus for contamination control in processing apparatus containing voltage driven electrode

Publications (2)

Publication Number Publication Date
DE69124411D1 true DE69124411D1 (de) 1997-03-13
DE69124411T2 DE69124411T2 (de) 1997-07-17

Family

ID=24049208

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124411T Expired - Lifetime DE69124411T2 (de) 1990-04-25 1991-03-23 Vorrichtung zur Kontrolle der Kontaminierung in einen mit einer Spannung betriebenen Elektroden versehenen Gerät

Country Status (4)

Country Link
US (1) US5298720A (de)
EP (1) EP0453780B1 (de)
JP (1) JP2566692B2 (de)
DE (1) DE69124411T2 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2634019B2 (ja) * 1992-06-16 1997-07-23 アプライド マテリアルズ インコーポレイテッド 半導体デバイス処理における微粒子汚染の低減
US5622595A (en) * 1992-06-16 1997-04-22 Applied Materials, Inc Reducing particulate contamination during semiconductor device processing
US5410122A (en) * 1993-03-15 1995-04-25 Applied Materials, Inc. Use of electrostatic forces to reduce particle contamination in semiconductor plasma processing chambers
JPH06302548A (ja) * 1993-04-14 1994-10-28 Nec Corp 半導体装置の製造装置
CH687987A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer.
EP0624896B1 (de) * 1993-05-13 1999-09-22 Applied Materials, Inc. Kontrolle der Kontamination in einem Plasma durch Ausgestaltung des Plasmaschildes unter Verwendung von Materialien mit verschiedenen RF-Impedanzen
US5456796A (en) * 1993-06-02 1995-10-10 Applied Materials, Inc. Control of particle generation within a reaction chamber
US6123864A (en) 1993-06-02 2000-09-26 Applied Materials, Inc. Etch chamber
US5480052A (en) * 1993-10-22 1996-01-02 Applied Materials, Inc. Domed extension for process chamber electrode
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
US5439523A (en) * 1994-02-14 1995-08-08 Memc Electronic Materials, Inc. Device for suppressing particle splash onto a semiconductor wafer
US5507874A (en) * 1994-06-03 1996-04-16 Applied Materials, Inc. Method of cleaning of an electrostatic chuck in plasma reactors
US6465043B1 (en) * 1996-02-09 2002-10-15 Applied Materials, Inc. Method and apparatus for reducing particle contamination in a substrate processing chamber
US6121163A (en) 1996-02-09 2000-09-19 Applied Materials, Inc. Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface
US5902494A (en) * 1996-02-09 1999-05-11 Applied Materials, Inc. Method and apparatus for reducing particle generation by limiting DC bias spike
US5849135A (en) * 1996-03-12 1998-12-15 The Regents Of The University Of California Particulate contamination removal from wafers using plasmas and mechanical agitation
US5858108A (en) 1996-07-15 1999-01-12 Taiwan Semiconductor Manufacturing Company, Ltd Removal of particulate contamination in loadlocks
DE19653661C1 (de) * 1996-12-20 1998-05-20 Guenter Prof Dr Fuhr Verfahren und Vorrichtung zur Mikropartikelpositionierung in Feldkäfigen
JP3398027B2 (ja) * 1997-10-15 2003-04-21 株式会社荏原製作所 気相成長装置及びその洗浄方法
US6117281A (en) * 1998-01-08 2000-09-12 Seagate Technology, Inc. Magnetron sputtering target for reduced contamination
US6125789A (en) * 1998-01-30 2000-10-03 Applied Materials, Inc. Increasing the sensitivity of an in-situ particle monitor
AU3052099A (en) * 1998-03-30 1999-10-18 Sizary Ltd. Semiconductor purification apparatus and method
US6184489B1 (en) * 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6013984A (en) * 1998-06-10 2000-01-11 Lam Research Corporation Ion energy attenuation method by determining the required number of ion collisions
KR100271770B1 (ko) * 1998-09-03 2001-02-01 윤종용 반도체장치 제조를 위한 플라즈마 공정챔버
US6805137B2 (en) 2001-08-27 2004-10-19 Applied Materials, Inc. Method for removing contamination particles from substrates
US20030037800A1 (en) * 2001-08-27 2003-02-27 Applied Materials, Inc. Method for removing contamination particles from substrate processing chambers
US6684523B2 (en) 2001-08-27 2004-02-03 Applied Materials, Inc. Particle removal apparatus
US6725564B2 (en) 2001-08-27 2004-04-27 Applied Materials, Inc. Processing platform with integrated particle removal system
US6779226B2 (en) 2001-08-27 2004-08-24 Applied Materials, Inc. Factory interface particle removal platform
US20030037801A1 (en) * 2001-08-27 2003-02-27 Applied Materials, Inc. Method for increasing the efficiency of substrate processing chamber contamination detection
US6878636B2 (en) * 2001-08-27 2005-04-12 Applied Materials, Inc. Method for enhancing substrate processing
JP2004055748A (ja) 2002-07-18 2004-02-19 Sharp Corp パーティクル除去装置
CN101320677B (zh) * 2003-08-25 2012-02-01 东京毅力科创株式会社 减压处理室内的部件清洁方法和基板处理装置
JP4754196B2 (ja) * 2003-08-25 2011-08-24 東京エレクトロン株式会社 減圧処理室内の部材清浄化方法および基板処理装置
EP1680364A4 (de) * 2003-09-15 2009-08-05 Univ Delaware Entfernung von mikroorganismen und vorstufen von desinfektionsnebenprodukten unter verwendung von elementarem eisen oder aluminium
JP4547237B2 (ja) * 2004-03-29 2010-09-22 東京エレクトロン株式会社 真空装置、そのパーティクルモニタ方法及びプログラム
JP4450371B2 (ja) * 2004-04-28 2010-04-14 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法
DE102005055093A1 (de) * 2005-11-18 2007-05-24 Aixtron Ag CVD-Vorrichtung mit elektrostatischem Substratschutz
US8038850B2 (en) * 2006-06-23 2011-10-18 Qimonda Ag Sputter deposition method for forming integrated circuit
DE102006035644A1 (de) * 2006-07-31 2008-02-14 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Reduzieren der Kontamination durch Vorsehen einer zu entfernenden Polymerschutzschicht während der Bearbeitung von Mikrostrukturen
JP5697571B2 (ja) * 2011-10-06 2015-04-08 株式会社東芝 テンプレートの製造装置及びテンプレートの製造方法
US9721750B2 (en) 2015-07-28 2017-08-01 Varian Semiconductor Equipment Associates, Inc. Controlling contamination particle trajectory from a beam-line electrostatic element
JP6735549B2 (ja) * 2015-11-04 2020-08-05 東京エレクトロン株式会社 基板処理装置、基板処理方法及びリング状部材
CN107863304B (zh) * 2017-11-08 2020-08-04 上海华力微电子有限公司 一种检测静电吸盘表面颗粒污染物的方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4111783A (en) * 1977-11-08 1978-09-05 Bell Telephone Laboratories, Incorporated Triode sputtering system
FR2463975A1 (fr) * 1979-08-22 1981-02-27 Onera (Off Nat Aerospatiale) Procede et appareil pour la gravure chimique par voie seche des circuits integres
JPS5645427A (en) * 1979-09-21 1981-04-25 Mitsui Toatsu Chem Inc Preparation of o-alkylated phenol
JPS5845892B2 (ja) * 1980-06-23 1983-10-13 大阪真空化学株式会社 スパツタ蒸着装置
JPS57161242U (de) * 1981-04-01 1982-10-09
DE3272669D1 (en) * 1982-03-18 1986-09-25 Ibm Deutschland Plasma-reactor and its use in etching and coating substrates
GB2123331B (en) * 1982-04-29 1985-11-27 Christopher David Dobson Plasma treatment apparatus and method
NL8202092A (nl) * 1982-05-21 1983-12-16 Philips Nv Magnetronkathodesputtersysteem.
JPS60242622A (ja) * 1984-05-16 1985-12-02 Mitsubishi Electric Corp 反応性イオンエツチング装置
JPH0663107B2 (ja) * 1984-11-14 1994-08-17 東京エレクトロン山梨株式会社 平行平板型ドライエツチング装置
US4626447A (en) * 1985-03-18 1986-12-02 Energy Conversion Devices, Inc. Plasma confining apparatus
JPS61224423A (ja) * 1985-03-29 1986-10-06 Toshiba Corp 反応性イオンエツチング装置
US4719645A (en) * 1985-08-12 1988-01-12 Fujitsu Limited Rotary anode assembly for an X-ray source
JPS6316625A (ja) * 1986-07-09 1988-01-23 Matsushita Electric Ind Co Ltd ドライエツチング用電極
US4870653A (en) * 1988-04-22 1989-09-26 The Board Of Trustees Of The Leland Stanford Junior University Traveling-wave laser-produced-plasma energy source for photoionization laser pumping and lasers incorporating said
US5032202A (en) * 1989-10-03 1991-07-16 Martin Marietta Energy Systems, Inc. Plasma generating apparatus for large area plasma processing
EP0432488A3 (en) * 1989-12-12 1991-10-23 Siemens Aktiengesellschaft Device for plasma processing semi-conductor wafers and method for utilizing such a device

Also Published As

Publication number Publication date
US5298720A (en) 1994-03-29
EP0453780A2 (de) 1991-10-30
EP0453780A3 (en) 1992-03-18
JPH0574737A (ja) 1993-03-26
EP0453780B1 (de) 1997-01-29
DE69124411T2 (de) 1997-07-17
JP2566692B2 (ja) 1996-12-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8330 Complete renunciation