DE69124175D1 - Abschaltbares Halbleiterbauelement und dessen Anwendung in einer Leistungsumwandlungsvorrichtung - Google Patents

Abschaltbares Halbleiterbauelement und dessen Anwendung in einer Leistungsumwandlungsvorrichtung

Info

Publication number
DE69124175D1
DE69124175D1 DE69124175T DE69124175T DE69124175D1 DE 69124175 D1 DE69124175 D1 DE 69124175D1 DE 69124175 T DE69124175 T DE 69124175T DE 69124175 T DE69124175 T DE 69124175T DE 69124175 D1 DE69124175 D1 DE 69124175D1
Authority
DE
Germany
Prior art keywords
application
power conversion
conversion device
semiconductor component
switchable semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69124175T
Other languages
English (en)
Other versions
DE69124175T2 (de
Inventor
Hideo Honma
Yukimasa Satou
Susumu Murakami
Tsutomu Yatsuo
Isamu Sanpei
Kenji Yagishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69124175D1 publication Critical patent/DE69124175D1/de
Application granted granted Critical
Publication of DE69124175T2 publication Critical patent/DE69124175T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69124175T 1990-09-19 1991-08-12 Abschaltbares Halbleiterbauelement und dessen Anwendung in einer Leistungsumwandlungsvorrichtung Expired - Fee Related DE69124175T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2246974A JP2960506B2 (ja) 1990-09-19 1990-09-19 ターンオフ形半導体素子

Publications (2)

Publication Number Publication Date
DE69124175D1 true DE69124175D1 (de) 1997-02-27
DE69124175T2 DE69124175T2 (de) 1997-04-30

Family

ID=17156494

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124175T Expired - Fee Related DE69124175T2 (de) 1990-09-19 1991-08-12 Abschaltbares Halbleiterbauelement und dessen Anwendung in einer Leistungsumwandlungsvorrichtung

Country Status (4)

Country Link
US (1) US5324967A (de)
EP (1) EP0476296B1 (de)
JP (1) JP2960506B2 (de)
DE (1) DE69124175T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0855978A (ja) * 1994-06-09 1996-02-27 Ngk Insulators Ltd 半導体装置およびその製造方法
EP0696066A3 (de) * 1994-06-30 1998-06-24 Hitachi, Ltd. Schaltungs-Halbleiterbauteil und Leistungswandler
JP3277075B2 (ja) * 1994-09-07 2002-04-22 日本碍子株式会社 半導体装置およびその製造方法
DE19746974A1 (de) * 1997-10-24 1999-04-29 Asea Brown Boveri Abschaltthyristor mit Stopschicht
KR20010052260A (ko) 1998-04-17 2001-06-25 메이나드, 니겔 폴 아인산염 이온을 포함하는 살균 조성물
US6913955B1 (en) * 2002-10-01 2005-07-05 T-Ram, Inc. Method of manufacturing a thyristor device with a control port in a trench
US7173290B2 (en) * 2003-03-07 2007-02-06 Teledyne Licensing, Llc Thyristor switch with turn-off current shunt, and operating method
US6965131B2 (en) * 2003-03-07 2005-11-15 Rockwell Scientific Licensing, Llc Thyristor switch with turn-off current shunt, and operating method
US7982284B2 (en) * 2006-06-28 2011-07-19 Infineon Technologies Ag Semiconductor component including an isolation structure and a contact to the substrate
JP6696132B2 (ja) * 2015-09-10 2020-05-20 富士ゼロックス株式会社 発光部品、プリントヘッド及び画像形成装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6019147B2 (ja) * 1979-01-24 1985-05-14 株式会社日立製作所 ゲ−ト・タ−ン・オフ・サイリスタ
JPS5739575A (en) * 1980-08-21 1982-03-04 Mitsubishi Electric Corp Gate turn-off thyristor
JPS5788771A (en) * 1980-11-21 1982-06-02 Semiconductor Res Found Electrostatic induction thyristor
FR2549293B1 (fr) * 1983-07-13 1986-10-10 Silicium Semiconducteur Ssc Transistor bipolaire haute frequence et son procede de fabrication
DE3586735D1 (de) * 1984-10-19 1992-11-12 Bbc Brown Boveri & Cie Abschaltbares leistungshalbleiterbauelement.
JPH0799738B2 (ja) * 1985-09-05 1995-10-25 三菱電機株式会社 半導体装置の製造方法
JPS62147769A (ja) * 1985-12-20 1987-07-01 Fuji Electric Co Ltd Ｇｔｏサイリスタ
JPH0658959B2 (ja) * 1987-01-29 1994-08-03 富士電機株式会社 ゲ−ト・タ−ン・オフ・サイリスタ
JPH01136369A (ja) * 1987-11-21 1989-05-29 Toshiba Corp 過電圧保護機能付半導体装置の製造方法
US4962414A (en) * 1988-02-11 1990-10-09 Sgs-Thomson Microelectronics, Inc. Method for forming a contact VIA

Also Published As

Publication number Publication date
EP0476296B1 (de) 1997-01-15
US5324967A (en) 1994-06-28
EP0476296A1 (de) 1992-03-25
JPH04127474A (ja) 1992-04-28
DE69124175T2 (de) 1997-04-30
JP2960506B2 (ja) 1999-10-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee