DE69124175D1 - Abschaltbares Halbleiterbauelement und dessen Anwendung in einer Leistungsumwandlungsvorrichtung - Google Patents
Abschaltbares Halbleiterbauelement und dessen Anwendung in einer LeistungsumwandlungsvorrichtungInfo
- Publication number
- DE69124175D1 DE69124175D1 DE69124175T DE69124175T DE69124175D1 DE 69124175 D1 DE69124175 D1 DE 69124175D1 DE 69124175 T DE69124175 T DE 69124175T DE 69124175 T DE69124175 T DE 69124175T DE 69124175 D1 DE69124175 D1 DE 69124175D1
- Authority
- DE
- Germany
- Prior art keywords
- application
- power conversion
- conversion device
- semiconductor component
- switchable semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2246974A JP2960506B2 (ja) | 1990-09-19 | 1990-09-19 | ターンオフ形半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69124175D1 true DE69124175D1 (de) | 1997-02-27 |
DE69124175T2 DE69124175T2 (de) | 1997-04-30 |
Family
ID=17156494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69124175T Expired - Fee Related DE69124175T2 (de) | 1990-09-19 | 1991-08-12 | Abschaltbares Halbleiterbauelement und dessen Anwendung in einer Leistungsumwandlungsvorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5324967A (de) |
EP (1) | EP0476296B1 (de) |
JP (1) | JP2960506B2 (de) |
DE (1) | DE69124175T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0855978A (ja) * | 1994-06-09 | 1996-02-27 | Ngk Insulators Ltd | 半導体装置およびその製造方法 |
EP0696066A3 (de) * | 1994-06-30 | 1998-06-24 | Hitachi, Ltd. | Schaltungs-Halbleiterbauteil und Leistungswandler |
JP3277075B2 (ja) * | 1994-09-07 | 2002-04-22 | 日本碍子株式会社 | 半導体装置およびその製造方法 |
DE19746974A1 (de) * | 1997-10-24 | 1999-04-29 | Asea Brown Boveri | Abschaltthyristor mit Stopschicht |
EP1071331A4 (de) | 1998-04-17 | 2004-12-29 | Matter Smiths Holdings Ltd | Phosphitionen enthaltende biozide zusammensetzung |
US6913955B1 (en) * | 2002-10-01 | 2005-07-05 | T-Ram, Inc. | Method of manufacturing a thyristor device with a control port in a trench |
US6965131B2 (en) * | 2003-03-07 | 2005-11-15 | Rockwell Scientific Licensing, Llc | Thyristor switch with turn-off current shunt, and operating method |
US7173290B2 (en) * | 2003-03-07 | 2007-02-06 | Teledyne Licensing, Llc | Thyristor switch with turn-off current shunt, and operating method |
US7982284B2 (en) * | 2006-06-28 | 2011-07-19 | Infineon Technologies Ag | Semiconductor component including an isolation structure and a contact to the substrate |
JP6696132B2 (ja) * | 2015-09-10 | 2020-05-20 | 富士ゼロックス株式会社 | 発光部品、プリントヘッド及び画像形成装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6019147B2 (ja) * | 1979-01-24 | 1985-05-14 | 株式会社日立製作所 | ゲ−ト・タ−ン・オフ・サイリスタ |
JPS5739575A (en) * | 1980-08-21 | 1982-03-04 | Mitsubishi Electric Corp | Gate turn-off thyristor |
JPS5788771A (en) * | 1980-11-21 | 1982-06-02 | Semiconductor Res Found | Electrostatic induction thyristor |
FR2549293B1 (fr) * | 1983-07-13 | 1986-10-10 | Silicium Semiconducteur Ssc | Transistor bipolaire haute frequence et son procede de fabrication |
EP0178387B1 (de) * | 1984-10-19 | 1992-10-07 | BBC Brown Boveri AG | Abschaltbares Leistungshalbleiterbauelement |
JPH0799738B2 (ja) * | 1985-09-05 | 1995-10-25 | 三菱電機株式会社 | 半導体装置の製造方法 |
JPS62147769A (ja) * | 1985-12-20 | 1987-07-01 | Fuji Electric Co Ltd | Gtoサイリスタ |
JPH0658959B2 (ja) * | 1987-01-29 | 1994-08-03 | 富士電機株式会社 | ゲ−ト・タ−ン・オフ・サイリスタ |
JPH01136369A (ja) * | 1987-11-21 | 1989-05-29 | Toshiba Corp | 過電圧保護機能付半導体装置の製造方法 |
US4962414A (en) * | 1988-02-11 | 1990-10-09 | Sgs-Thomson Microelectronics, Inc. | Method for forming a contact VIA |
-
1990
- 1990-09-19 JP JP2246974A patent/JP2960506B2/ja not_active Expired - Fee Related
-
1991
- 1991-08-08 US US07/742,833 patent/US5324967A/en not_active Expired - Fee Related
- 1991-08-12 EP EP91113498A patent/EP0476296B1/de not_active Expired - Lifetime
- 1991-08-12 DE DE69124175T patent/DE69124175T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04127474A (ja) | 1992-04-28 |
EP0476296A1 (de) | 1992-03-25 |
JP2960506B2 (ja) | 1999-10-06 |
US5324967A (en) | 1994-06-28 |
EP0476296B1 (de) | 1997-01-15 |
DE69124175T2 (de) | 1997-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |