DE69117032D1 - Endstufe mit dem Verstärkungsfaktor Eins insbesondere für monolithisch integrierbare Leistungsverstärker - Google Patents

Endstufe mit dem Verstärkungsfaktor Eins insbesondere für monolithisch integrierbare Leistungsverstärker

Info

Publication number
DE69117032D1
DE69117032D1 DE69117032T DE69117032T DE69117032D1 DE 69117032 D1 DE69117032 D1 DE 69117032D1 DE 69117032 T DE69117032 T DE 69117032T DE 69117032 T DE69117032 T DE 69117032T DE 69117032 D1 DE69117032 D1 DE 69117032D1
Authority
DE
Germany
Prior art keywords
gain factor
power
power amplifier
monolithically integrable
power amplifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69117032T
Other languages
English (en)
Other versions
DE69117032T2 (de
Inventor
Edoardo Botti
Guido Brasca
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of DE69117032D1 publication Critical patent/DE69117032D1/de
Application granted granted Critical
Publication of DE69117032T2 publication Critical patent/DE69117032T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45278—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using BiFET transistors as the active amplifying circuit
    • H03F3/45282—Long tailed pairs
    • H03F3/45286—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3008—Bifet SEPP output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3033—NMOS SEPP output stages
    • H03F3/3037—NMOS SEPP output stages with asymmetric control, i.e. one control branch containing a supplementary phase inverting stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45278—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using BiFET transistors as the active amplifying circuit
    • H03F3/45282—Long tailed pairs
    • H03F3/45291—Folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45028—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are folded cascode coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45188—Indexing scheme relating to differential amplifiers the differential amplifier contains one or more current sources in the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45471—Indexing scheme relating to differential amplifiers the CSC comprising one or more extra current sources

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE69117032T 1990-12-20 1991-12-17 Endstufe mit dem Verstärkungsfaktor Eins insbesondere für monolithisch integrierbare Leistungsverstärker Expired - Fee Related DE69117032T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT02244990A IT1244210B (it) 1990-12-20 1990-12-20 Stadio finale a guadagno unitario particolarmente per amplificatori di potenza integrabili monoliticamente

Publications (2)

Publication Number Publication Date
DE69117032D1 true DE69117032D1 (de) 1996-03-21
DE69117032T2 DE69117032T2 (de) 1996-06-20

Family

ID=11196447

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69117032T Expired - Fee Related DE69117032T2 (de) 1990-12-20 1991-12-17 Endstufe mit dem Verstärkungsfaktor Eins insbesondere für monolithisch integrierbare Leistungsverstärker

Country Status (6)

Country Link
US (1) US5216381A (de)
EP (1) EP0492374B1 (de)
JP (1) JPH04307804A (de)
KR (1) KR920013891A (de)
DE (1) DE69117032T2 (de)
IT (1) IT1244210B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5748035A (en) * 1994-05-27 1998-05-05 Arithmos, Inc. Channel coupled feedback circuits
FR2724072A1 (fr) * 1994-08-25 1996-03-01 Philips Composants Etage amplificateur de puissance, de type suiveur.
FI97655C (fi) * 1995-04-05 1997-01-27 Nokia Telecommunications Oy Offset-kompensoitu lineaarinen RF-ilmaisin
WO1997008823A2 (en) * 1995-08-29 1997-03-06 Philips Electronics N.V. Circuit arrangement provided with a voltage - current converter
DE60034131T2 (de) 2000-12-04 2008-01-24 Infineon Technologies Ag Treiber für einen externen Feldeffekttransistor mit hoher Genauigkeit und Gate-Spannungsschutz
US6374043B1 (en) * 2001-03-30 2002-04-16 Texas Instruments Incorporated Fully-integrated VCM driver with controlled and predictable Class-AB linear operation
US6750722B2 (en) * 2002-06-28 2004-06-15 Freescale Semiconductor, Inc. Bias control for HBT power amplifiers
JP2011142402A (ja) * 2010-01-05 2011-07-21 Toshiba Corp 出力回路
CN115955235B (zh) * 2023-03-15 2023-05-30 北京永乐华航精密仪器仪表有限公司 一种陀螺仪抗干扰输出电路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966057A (de) * 1972-10-27 1974-06-26
US3987369A (en) * 1974-05-22 1976-10-19 Nippon Gakki Seizo Kabushiki Kaisha Direct-coupled FET amplifier
JPS5541025A (en) * 1978-09-14 1980-03-22 Nagasawa:Kk Bias current automatic adjusting method and push pull amplifier circuit
JPS5642409A (en) * 1979-08-31 1981-04-20 Hitachi Ltd Output amplifying circuit
DE3523426A1 (de) * 1985-06-29 1987-01-02 Johannes F M Van Den Biggelaar Audio-verstaerkeranordnung mit einem elektrodynamischen lautsprecher, insbesondere aktivlautsprecher
IT1185935B (it) * 1985-09-18 1987-11-18 Sgs Microelettronica Spa Stradio di uscita cmos a grande escursione di tensione e con stabilizzazione della corrente di rifoso

Also Published As

Publication number Publication date
EP0492374B1 (de) 1996-02-07
JPH04307804A (ja) 1992-10-30
IT1244210B (it) 1994-07-08
US5216381A (en) 1993-06-01
EP0492374A1 (de) 1992-07-01
DE69117032T2 (de) 1996-06-20
IT9022449A1 (it) 1992-06-21
KR920013891A (ko) 1992-07-29
IT9022449A0 (it) 1990-12-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: STMICROELECTRONICS S.R.L., AGRATE BRIANZA, MAILAND

8339 Ceased/non-payment of the annual fee