DE69113618D1 - Verfahren zur bildung sehr präziser lackmuster. - Google Patents

Verfahren zur bildung sehr präziser lackmuster.

Info

Publication number
DE69113618D1
DE69113618D1 DE69113618T DE69113618T DE69113618D1 DE 69113618 D1 DE69113618 D1 DE 69113618D1 DE 69113618 T DE69113618 T DE 69113618T DE 69113618 T DE69113618 T DE 69113618T DE 69113618 D1 DE69113618 D1 DE 69113618D1
Authority
DE
Germany
Prior art keywords
precise
creating
lacquer pattern
lacquer
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69113618T
Other languages
English (en)
Other versions
DE69113618T2 (de
Inventor
Hiroyuki Hirasawa
Minako Kobayashi
Yasuo Matsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
Japan Synthetic Rubber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Synthetic Rubber Co Ltd filed Critical Japan Synthetic Rubber Co Ltd
Publication of DE69113618D1 publication Critical patent/DE69113618D1/de
Application granted granted Critical
Publication of DE69113618T2 publication Critical patent/DE69113618T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/2018—Masking pattern obtained by selective application of an ink or a toner, e.g. ink jet printing
DE69113618T 1990-12-27 1991-12-26 Verfahren zur bildung sehr präziser lackmuster. Expired - Lifetime DE69113618T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP41520490A JP2939946B2 (ja) 1990-12-27 1990-12-27 微細レジストパターンの形成方法
PCT/JP1991/001766 WO1992012466A1 (en) 1990-12-27 1991-12-26 Method of forming minute resist pattern

Publications (2)

Publication Number Publication Date
DE69113618D1 true DE69113618D1 (de) 1995-11-09
DE69113618T2 DE69113618T2 (de) 1996-04-11

Family

ID=18523594

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69113618T Expired - Lifetime DE69113618T2 (de) 1990-12-27 1991-12-26 Verfahren zur bildung sehr präziser lackmuster.

Country Status (6)

Country Link
US (1) US5340702A (de)
EP (1) EP0517923B1 (de)
JP (1) JP2939946B2 (de)
KR (1) KR100207298B1 (de)
DE (1) DE69113618T2 (de)
WO (1) WO1992012466A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0171943B1 (ko) * 1995-06-26 1999-03-30 김주용 반도체 소자의 미세패턴 형성방법
US6576405B1 (en) 1999-07-01 2003-06-10 Zilog, Inc. High aspect ratio photolithographic method for high energy implantation
KR100455652B1 (ko) * 1999-09-06 2004-11-06 삼성전자주식회사 포지티브형 포토레지스트 막의 제조방법
JP2001147515A (ja) * 1999-09-07 2001-05-29 Ricoh Co Ltd フォトマスク設計方法、フォトマスク設計装置、コンピュータ読取可能な記憶媒体、フォトマスク、フォトレジスト、感光性樹脂、基板、マイクロレンズ及び光学素子
JP4566861B2 (ja) * 2005-08-23 2010-10-20 富士通株式会社 レジスト組成物、レジストパターンの形成方法、半導体装置及びその製造方法
JP5388817B2 (ja) * 2008-12-12 2014-01-15 キヤノン株式会社 液体吐出ヘッドの製造方法
JP6059071B2 (ja) * 2013-04-23 2017-01-11 東京応化工業株式会社 被膜形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873361A (en) * 1973-11-29 1975-03-25 Ibm Method of depositing thin film utilizing a lift-off mask
US4394437A (en) * 1981-09-24 1983-07-19 International Business Machines Corporation Process for increasing resolution of photolithographic images
JPS58198040A (ja) * 1982-05-14 1983-11-17 Nec Corp パタ−ン形成方法
EP0154932A3 (de) * 1984-03-09 1986-02-05 Hewlett-Packard Company Mehrschicht-Photolackverfahren
US4612275A (en) * 1985-04-26 1986-09-16 International Business Machines Corporation Multilayer resists with improved sensitivity and reduced proximity effect
JPS6351637A (ja) * 1986-08-21 1988-03-04 Sony Corp マスク形成方法
JPS63178529A (ja) * 1987-01-20 1988-07-22 Oki Electric Ind Co Ltd レジストパタ−ン形成方法
JPH02143254A (ja) * 1988-11-24 1990-06-01 Ricoh Co Ltd 精密パターンの形成方法
US5169494A (en) * 1989-03-27 1992-12-08 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method

Also Published As

Publication number Publication date
EP0517923A1 (de) 1992-12-16
KR100207298B1 (ko) 1999-07-15
JPH04232954A (ja) 1992-08-21
EP0517923A4 (en) 1993-04-14
KR937000886A (ko) 1993-03-16
JP2939946B2 (ja) 1999-08-25
US5340702A (en) 1994-08-23
DE69113618T2 (de) 1996-04-11
WO1992012466A1 (en) 1992-07-23
EP0517923B1 (de) 1995-10-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: JSR CORP., TOKIO/TOKYO, JP

8328 Change in the person/name/address of the agent

Representative=s name: MOSELPATENT TRIERPATENT, 54290 TRIER

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE SERWE & DR. WAGNER, 54290 TRIER