DE69112900T2 - Verfahren zum Verbinden synthetischer Einkristalle. - Google Patents

Verfahren zum Verbinden synthetischer Einkristalle.

Info

Publication number
DE69112900T2
DE69112900T2 DE1991612900 DE69112900T DE69112900T2 DE 69112900 T2 DE69112900 T2 DE 69112900T2 DE 1991612900 DE1991612900 DE 1991612900 DE 69112900 T DE69112900 T DE 69112900T DE 69112900 T2 DE69112900 T2 DE 69112900T2
Authority
DE
Germany
Prior art keywords
single crystals
synthetic single
joining synthetic
joining
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1991612900
Other languages
English (en)
Other versions
DE69112900D1 (de
Inventor
Hiroaki Aoshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11256890A external-priority patent/JPH0412100A/ja
Priority claimed from JP41458290A external-priority patent/JPH04224200A/ja
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE69112900D1 publication Critical patent/DE69112900D1/de
Publication of DE69112900T2 publication Critical patent/DE69112900T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE1991612900 1990-04-27 1991-04-26 Verfahren zum Verbinden synthetischer Einkristalle. Expired - Fee Related DE69112900T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11256890A JPH0412100A (ja) 1990-04-27 1990-04-27 主成分及び結晶系を同じくする合成単結晶体を化学結合させて一体同化した同軸結晶結合体の製造方法
JP41458290A JPH04224200A (ja) 1990-12-26 1990-12-26 面状格子欠陥を有する単結晶板の製造方法

Publications (2)

Publication Number Publication Date
DE69112900D1 DE69112900D1 (de) 1995-10-19
DE69112900T2 true DE69112900T2 (de) 1996-05-23

Family

ID=26451699

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991612900 Expired - Fee Related DE69112900T2 (de) 1990-04-27 1991-04-26 Verfahren zum Verbinden synthetischer Einkristalle.

Country Status (2)

Country Link
EP (1) EP0456060B1 (de)
DE (1) DE69112900T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025060A (en) * 1988-08-30 2000-02-15 Onyx Optics, Inc. Method and apparatus for composite gemstones
US5846638A (en) * 1988-08-30 1998-12-08 Onyx Optics, Inc. Composite optical and electro-optical devices
WO1993015243A1 (de) * 1992-01-23 1993-08-05 Siemens Aktiengesellschaft Verfahren zum herstellen von starren verbindungen zwischen einkristallinen körpern
US6484585B1 (en) 1995-02-28 2002-11-26 Rosemount Inc. Pressure sensor for a pressure transmitter
US6160824A (en) * 1998-11-02 2000-12-12 Maxios Laser Corporation Laser-pumped compound waveguide lasers and amplifiers
JP4251462B2 (ja) * 1998-12-22 2009-04-08 株式会社ジャパンセル 合成コランダムの接合方法、合成コランダムセルの製造方法及び合成コランダム
AU5293200A (en) * 1999-05-26 2000-12-12 Ii-Vi Incorporated Contacted crystal surface protector and method
US6516671B2 (en) 2000-01-06 2003-02-11 Rosemount Inc. Grain growth of electrical interconnection for microelectromechanical systems (MEMS)
US6505516B1 (en) 2000-01-06 2003-01-14 Rosemount Inc. Capacitive pressure sensing with moving dielectric
US6520020B1 (en) 2000-01-06 2003-02-18 Rosemount Inc. Method and apparatus for a direct bonded isolated pressure sensor
US6508129B1 (en) 2000-01-06 2003-01-21 Rosemount Inc. Pressure sensor capsule with improved isolation
US6561038B2 (en) 2000-01-06 2003-05-13 Rosemount Inc. Sensor with fluid isolation barrier
CN101944703A (zh) * 2010-07-30 2011-01-12 北京工业大学 激光棒端接Cr4+：YAG的制备工艺

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3116175A (en) * 1958-01-27 1963-12-31 Marvalaud Inc Method for forming bicrystalline specimens
EP0355340A1 (de) * 1988-07-04 1990-02-28 Hiroaki Aoshima Verfahren zur Herstellung von Gefügen durch Zusammenfügen synthetischer Einkristalle aus Korund
JPH07101679B2 (ja) * 1988-11-01 1995-11-01 三菱電機株式会社 電子デバイス用ウエハ，ウエハ用棒状基材および電子デバイス
US5201977A (en) * 1989-08-09 1993-04-13 Hiroaki Aoshima Process for producing structures from synthetic single-crystal pieces

Also Published As

Publication number Publication date
EP0456060B1 (de) 1995-09-13
DE69112900D1 (de) 1995-10-19
EP0456060A1 (de) 1991-11-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee