DE69109553T2 - Wellenlängenselektive optische Halbleitervorrichtung und Verfahren zur Verstärkung oder Ausstrahlung von Licht unter Verwendung derselben. - Google Patents

Wellenlängenselektive optische Halbleitervorrichtung und Verfahren zur Verstärkung oder Ausstrahlung von Licht unter Verwendung derselben.

Info

Publication number
DE69109553T2
DE69109553T2 DE69109553T DE69109553T DE69109553T2 DE 69109553 T2 DE69109553 T2 DE 69109553T2 DE 69109553 T DE69109553 T DE 69109553T DE 69109553 T DE69109553 T DE 69109553T DE 69109553 T2 DE69109553 T2 DE 69109553T2
Authority
DE
Germany
Prior art keywords
amplifying
same
optical device
emitting light
semiconductor optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69109553T
Other languages
English (en)
Other versions
DE69109553D1 (de
Inventor
Takeo Ono
Masahiro Okuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69109553D1 publication Critical patent/DE69109553D1/de
Application granted granted Critical
Publication of DE69109553T2 publication Critical patent/DE69109553T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
    • H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
DE69109553T 1990-07-11 1991-07-10 Wellenlängenselektive optische Halbleitervorrichtung und Verfahren zur Verstärkung oder Ausstrahlung von Licht unter Verwendung derselben. Expired - Fee Related DE69109553T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18338890 1990-07-11

Publications (2)

Publication Number Publication Date
DE69109553D1 DE69109553D1 (de) 1995-06-14
DE69109553T2 true DE69109553T2 (de) 1995-09-14

Family

ID=16134902

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69109553T Expired - Fee Related DE69109553T2 (de) 1990-07-11 1991-07-10 Wellenlängenselektive optische Halbleitervorrichtung und Verfahren zur Verstärkung oder Ausstrahlung von Licht unter Verwendung derselben.

Country Status (3)

Country Link
US (1) US5334854A (de)
EP (1) EP0466144B1 (de)
DE (1) DE69109553T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69315872T2 (de) * 1992-03-23 1998-05-20 Canon Kk Optische Vorrichtung und Methode unter Benutzung dieser Vorrichtung, welche die Änderung einer über die beiden Anschlussenden eines verstärkenden Bereichs abfallenden Spannung ausnutzt
US5337176A (en) * 1992-03-25 1994-08-09 U. S. Philips Corporation Optical amplifier with improved linearity
JPH06235889A (ja) * 1993-02-12 1994-08-23 Mitsubishi Electric Corp 半導体光強度変調器及びその製造方法
JP3226061B2 (ja) * 1993-02-19 2001-11-05 キヤノン株式会社 偏光無依存な半導体光増幅器及びそれを用いた光通信システム
JPH10223991A (ja) * 1997-01-31 1998-08-21 Ando Electric Co Ltd 可変波長レーザ光源
KR100618969B1 (ko) * 1999-07-12 2006-08-31 삼성전자주식회사 광송수신 모듈
JP2004088049A (ja) * 2002-03-08 2004-03-18 Mitsubishi Electric Corp 光半導体装置
US7244997B2 (en) * 2003-07-08 2007-07-17 President And Fellows Of Harvard College Magneto-luminescent transducer
US7286583B2 (en) * 2003-08-22 2007-10-23 The Board Of Trustees Of The University Of Illinois Semiconductor laser devices and methods
US7696536B1 (en) * 2003-08-22 2010-04-13 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
US7354780B2 (en) * 2003-08-22 2008-04-08 The Board Of Trustees Of The University Of Illinois Semiconductor light emitting devices and methods
US7998807B2 (en) * 2003-08-22 2011-08-16 The Board Of Trustees Of The University Of Illinois Method for increasing the speed of a light emitting biopolar transistor device
US20050040432A1 (en) * 2003-08-22 2005-02-24 The Board Of Trustees Of The University Of Illinois Light emitting device and method
US7091082B2 (en) 2003-08-22 2006-08-15 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
US7535034B2 (en) * 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
JP2007248850A (ja) * 2006-03-16 2007-09-27 Oki Electric Ind Co Ltd マッハツェンダ型半導体素子及びその制御方法
KR20070117238A (ko) * 2006-06-08 2007-12-12 삼성전기주식회사 반도체 발광 트랜지스터
US7711015B2 (en) * 2007-04-02 2010-05-04 The Board Of Trustees Of The University Of Illinois Method for controlling operation of light emitting transistors and laser transistors
US8811439B2 (en) * 2009-11-23 2014-08-19 Seminex Corporation Semiconductor laser assembly and packaging system
JP2013168500A (ja) * 2012-02-15 2013-08-29 Mitsubishi Electric Corp 光半導体装置
WO2018031916A1 (en) * 2016-08-12 2018-02-15 President And Fellows Of Harvard College Micro-machined thin film lithium niobate electro-optic devices
JP6888338B2 (ja) * 2017-03-09 2021-06-16 住友電気工業株式会社 半導体レーザ
JP6926541B2 (ja) * 2017-03-10 2021-08-25 住友電気工業株式会社 半導体レーザ
JP2018182306A (ja) * 2017-04-17 2018-11-15 浜松ホトニクス株式会社 光半導体素子、及び光半導体素子の駆動方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0732292B2 (ja) * 1987-06-17 1995-04-10 富士通株式会社 半導体発光装置
JPS6470724A (en) * 1987-09-10 1989-03-16 Shimadzu Corp Optical switch
DE58906978D1 (de) * 1988-09-22 1994-03-24 Siemens Ag Abstimmbarer DFB-Laser.
EP0404551A3 (de) * 1989-06-20 1992-08-26 Optical Measurement Technology Development Co. Ltd. Optische Halbleitervorrichtung
US5157680A (en) * 1989-11-08 1992-10-20 Mitsubishi Denki Kabushiki Kaisha Integrated semiconductor laser
US5038185A (en) * 1989-11-30 1991-08-06 Xerox Corporation Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors

Also Published As

Publication number Publication date
EP0466144B1 (de) 1995-05-10
EP0466144A2 (de) 1992-01-15
US5334854A (en) 1994-08-02
DE69109553D1 (de) 1995-06-14
EP0466144A3 (en) 1992-06-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee