DE69107777T2 - Laser mit gemischten Yttrium- und Lanthanidsilicateneinkristallen. - Google Patents

Laser mit gemischten Yttrium- und Lanthanidsilicateneinkristallen.

Info

Publication number
DE69107777T2
DE69107777T2 DE69107777T DE69107777T DE69107777T2 DE 69107777 T2 DE69107777 T2 DE 69107777T2 DE 69107777 T DE69107777 T DE 69107777T DE 69107777 T DE69107777 T DE 69107777T DE 69107777 T2 DE69107777 T2 DE 69107777T2
Authority
DE
Germany
Prior art keywords
laser
single crystals
silicate single
mixed yttrium
lanthanide silicate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69107777T
Other languages
English (en)
Other versions
DE69107777D1 (de
Inventor
Christian Faure
Richard Moncorge
Roselyne Romero
Christophe Wyon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69107777D1 publication Critical patent/DE69107777D1/de
Publication of DE69107777T2 publication Critical patent/DE69107777T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1688—Stoichiometric laser compounds, i.e. in which the active element forms one component of a stoichiometric formula rather than being merely a dopant
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/77742—Silicates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/34—Silicates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Lasers (AREA)
DE69107777T 1990-10-25 1991-10-23 Laser mit gemischten Yttrium- und Lanthanidsilicateneinkristallen. Expired - Fee Related DE69107777T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9013231A FR2668464B1 (fr) 1990-10-25 1990-10-25 Silicates mixtes d'yttrium et de lanthanide et laser utilisant des monocristaux de ces silicates.

Publications (2)

Publication Number Publication Date
DE69107777D1 DE69107777D1 (de) 1995-04-06
DE69107777T2 true DE69107777T2 (de) 1995-09-21

Family

ID=9401555

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69107777T Expired - Fee Related DE69107777T2 (de) 1990-10-25 1991-10-23 Laser mit gemischten Yttrium- und Lanthanidsilicateneinkristallen.

Country Status (6)

Country Link
US (1) US5173911A (de)
EP (1) EP0483003B1 (de)
JP (1) JPH0613693A (de)
CN (1) CN1032319C (de)
DE (1) DE69107777T2 (de)
FR (1) FR2668464B1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5299215A (en) * 1991-09-25 1994-03-29 Amoco Corporation Rare earth ion upconversion laser system
US5295146A (en) * 1992-04-10 1994-03-15 Polaroid Corporation Solid state gain mediums for optically pumped monolithic laser
CN1035146C (zh) * 1994-08-24 1997-06-11 电子部第11研究所 Q开关微微秒脉冲激光器
US5541948A (en) * 1994-11-28 1996-07-30 The Regents Of The University Of California Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers
EP2284912B1 (de) * 1996-06-26 2013-09-04 OSRAM Opto Semiconductors GmbH Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US20010021215A1 (en) * 1999-07-30 2001-09-13 Udo Bunting Compact ultra fast laser
US6891878B2 (en) * 2003-05-01 2005-05-10 Raytheon Company Eye-safe solid state laser system and method
CN101319395B (zh) * 2008-06-25 2011-11-02 福州高意通讯有限公司 一种掺钕钒酸镧钇激光晶体及其制备方法和应用
JP5952130B2 (ja) * 2012-08-15 2016-07-13 日本電信電話株式会社 光素子の製造方法
JP5947148B2 (ja) * 2012-08-15 2016-07-06 日本電信電話株式会社 光素子の製造方法
CN105776232B (zh) * 2016-01-29 2018-06-22 陕西科技大学 一种片状Y2SiO5的制备方法
CZ308384B6 (cs) * 2017-11-29 2020-07-15 Crytur, Spol. S R.O. Zdroj nekoherentního záření

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3632523A (en) * 1969-09-22 1972-01-04 Westinghouse Electric Corp Calcium-yttrium silicate oxyapatite laser materials
FR2599733B1 (fr) * 1986-06-10 1988-08-26 Centre Nat Rech Scient Gallates mixtes de lanthanide-magnesium, laser utilisant des monocristaux de ces gallates
FR2600055B1 (fr) * 1986-06-16 1988-08-26 Commissariat Energie Atomique Aluminates mixtes de lanthanide-magnesium, lasers utilisant des monocristaux de ces aluminates
EP0253589A1 (de) * 1986-07-14 1988-01-20 AT&T Corp. Anzeigevorrichtung mit Kristall- und Pulverphosphoren
US4954211A (en) * 1988-03-04 1990-09-04 Litton Systems, Inc. Monocrystalline lanthanum orthogallate laser material

Also Published As

Publication number Publication date
FR2668464B1 (fr) 1993-01-08
FR2668464A1 (fr) 1992-04-30
DE69107777D1 (de) 1995-04-06
CN1032319C (zh) 1996-07-17
EP0483003B1 (de) 1995-03-01
JPH0613693A (ja) 1994-01-21
US5173911A (en) 1992-12-22
EP0483003A1 (de) 1992-04-29
CN1059882A (zh) 1992-04-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee