EP0253589A1 - Anzeigevorrichtung mit Kristall- und Pulverphosphoren - Google Patents

Anzeigevorrichtung mit Kristall- und Pulverphosphoren Download PDF

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Publication number
EP0253589A1
EP0253589A1 EP87306116A EP87306116A EP0253589A1 EP 0253589 A1 EP0253589 A1 EP 0253589A1 EP 87306116 A EP87306116 A EP 87306116A EP 87306116 A EP87306116 A EP 87306116A EP 0253589 A1 EP0253589 A1 EP 0253589A1
Authority
EP
European Patent Office
Prior art keywords
mole percent
concentration
terbium
doped
gadolinium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP87306116A
Other languages
English (en)
French (fr)
Inventor
George Wayne Berkstresser
Charles David Brandle, Jr.
Joseph Shmulovich
Alejandro Jaucian Valentino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc, AT&T Corp filed Critical American Telephone and Telegraph Co Inc
Publication of EP0253589A1 publication Critical patent/EP0253589A1/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/18—Luminescent screens
    • H01J29/20—Luminescent screens characterised by the luminescent material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/77742—Silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/77922—Silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/18—Metal complexes
    • C09K2211/182—Metal complexes of the rare earth metals, i.e. Sc, Y or lanthanide

Definitions

  • the invention involves display devices utilizing crystalline and poiser phosphors.
  • Display devices including visual display devices, play an important part in modern technology and commercial devices available to the public.
  • Typical display devices are cathode ray tubes for use in television sets, tubes used as monitors or in projection television tubes.
  • x-ray imaging devices in which typically x-ray radiation is converted into visible radiation.
  • Phosphors are used to convert various kinds of energy, particularly electromagnetic radiation energy and electron beam energy into radiation in the visible region or radiation region directly adjacent to the visible region such as the infrared region or ultraviolet region.
  • Cathode ray tubes are especially useful in display devices. They are extensively used in direct view and projection television sets, monitors for computer terminals, television and avionics systems, etc. In many applications (such as projection tubes), high image brightness is required which can only be obtained by the use of a very high power density electron beam. Such high power densities often degrade conventional cathode ray tubes and therefore limit the lifetime of high intensity cathode ray tubes.
  • the invention is a display device comprising certain crystalline and powder phosphors in which the host crystal for the phosphor is yttrium orthosilicate and the activator ion is one or more rare-earth ions.
  • the display device typically comprises an excitation source and a viewing screen comprising the single crystal phosphor or powder phosphor. Particularly useful is a cathode ray tube with single crystal phosphor as part of the faceplate.
  • Typical rare-­earth ions used in the single crystal phosphor are gadolinium, terbium, europium, cerium, praseodymium, erbium, thulium and ytterbium.
  • Effective concentrations vary with the rare-earth ion or ions involved but are generally between 0.05 and 25.0 mole percent.
  • the mole percent refers to mole percent of yttrium in the crystal.
  • energy transfer mechanisms may be responsible for enhanced brightness of the phosphor.
  • the single crystal faceplate may be partially or entirely doped with the dopant making up the phosphor or a thin layer of phosphor attached to a single crystal faceplate.
  • the single crystal may be yttrium orthosilicate or other (often more available) crystal or substance.
  • Such display devices are highly sensitive, yield high brightness with a minimum excitation, have high saturation levels and are easily fabricated.
  • display devices particularly CRTs
  • CRTs of conventional design (typically all glass) in which the rare-earth doped yttrium orthosilicate is in powder form advantageously made by solid-state reaction.
  • the invention is based on the discovery that yttrium orthosilicate when suitable doped with certain rare-earth ions or combinations of rare-earth ions have extraordinary good phosphor and cathodoluminescence characteristics for use in display devices such as x-ray imaging devices and cathode ray tubes.
  • FIG. 1 A typical cathode ray tube is shown in FIG. 1.
  • the cathode ray tube 10 is made up of an electron radiation source, 11, with means for electrical connection to outside source of electrical signal 12, an enclosure usually made of glass 13 and a single crystal screen 14.
  • means is provided for deflecting a beam of electrons and varying the amplitude of the electron beam.
  • phosphor compositions useful in display devices are yttrium orthosilicate (Y2SiO5).
  • the dopants are all rare-earth ions--some useful for their fluorescent or cathodoluminescent characteristics (color, wavelength of output, etc.) and some useful for their characteristic of modifying or enhancing the fluorescence or cathodoluminescence of another rare-earth ion dopant.
  • Use of display devices, especially CRTs with such phosphors is highly advantageous because of high light output, large dynamic range and ease of fabrication.
  • the single crystal phosphor materials can be made in a variety of ways including cooling a melt comprising Y2SiO5 and the rare-earth dopant or dopants.
  • a particularly convenient method of growing these crystals are by the Czochralski technique.
  • a particularly convenient apparatus 30 for growth is shown in FIG. 5.
  • This apparatus is made up of a ZrO2 base 31, ZrO2 supports 32 and an outside quartz tube 33. Inside the quartz tube 33 are the iridium crucible 34, an iridium lid 35 for the iridium crucible 35, a ZrO2 ring 36 and tube 37 structure and further thermal insulation made of ZrO2 felt 38 and ZrO2 granular material 39.
  • the phosphor material is contained in the crucible at a temperature above its melting temperature and a rotating rod with a crystalline seed is used to grow a crystal out of the melt. Heating is accomplished by means of an RF coil 40 surrounding the growth apparatus.
  • Typical growth conditions for Y2SiO5 are as follows: The charge weight is about 280 grams and the melting point about 2070° C. The weight of the crystal is about 100-200 grams, the diameter about 2.0 cm and the length about 6-8 cm. The pull rate is about 3.8 mm/hour and the rotation rate about 20 RPM. Growth direction can be varied.
  • cathode ray tubes with single crystal Y2SiO5 as the faceplate.
  • the Y2SiO5 may be doped with the rare-earth to make up a large single crystal phosphor or the single crystal faceplate undoped and a phosphor layer attached to the back (inside) of the faceplate.
  • a faceplate made of another single crystal material and the single crystal Y2SiO5 attached to the inside face of the faceplate.
  • the single crystal In order to fabricate a CRT using Y2SiO5 single crystal faceplate, the single crystal must be sealed to the CRT tube glass. This sealing operation is typically done by frit sealing or direct fusion to the glass.
  • the thermal expansion of crystal Y2SiO5 is highly anisotropic; and, to insure good attachment to the glass CRT structure, it is highly advantageous to find a crystal plane orientation of the Y2SiO5 crystal where the thermal expansion in the plane is uniform. This involves accurate determination of the tensor elements of the thermal expansion coefficient of Y2SiO5. To perform this task it was necessary to accurately determine the lattice parameters of the Y2SiO5 crystal, then orient small crystals which were then used as seeds for Czochralski growth. From larger crystals grown with a known orientation, parts were then fabricated for thermal expansion coefficient measurements.
  • the proportionality constant for each of these tensors is [ ⁇ ij ], the thermal expansion coefficient.
  • the thermal expansion coefficient may be expressed by:
  • the directions of the two principle axes normal to Ox2 may be chosen arbitrarily. We have found it to be more useful to select the Ox3 axis to be in the direction of the ⁇ 001> or c* reciprocal lattice direction since this is what is convenient to observe by x-ray diffraction techniques.
  • the Ox1 direction is thus defined by our selection of Ox3.
  • the expansion in the Ox2 direction is a maximum or a minimum, and so it is not sensitive to small misorientation of the crystal.
  • the tensors ⁇ 11 and ⁇ 33 are sensitive to small rotations about Ox2, i.e., the ⁇ 010>, and any errors in the alignment of the samples used to measure expansion parallel to Ox1 and Ox3 will be significant.
  • Nye J. F. Nye, Physical Properties of Crystals , Oxford University Press, London (1957) which involves the measurement of the expansion in numerous directions normal to the ⁇ 010> axis.
  • the thermal expansion coefficient magnitude may be described by an ellipsoid surface in three dimensional space.
  • a CRT faceplate of uniform in­plane thermal expansion determines the orientation where the points of intersection of a plane and the ellipsoid define a circle. This condition occurs only for one magnitude of thermal expansion coefficient, the median of the principle axis values. Therefore, to prepare the Y2SiO5 faceplate one must determine the orientation of a plane which contains both the above principle axis and a normal to this axis in which the thermal expansion coefficient has the same magnitude.
  • the crystals are to be cut parallel to a plane defined by the ⁇ 010> axis and its normal which lies either 30° or 135° from c*, where a positive angle is measured towards a*.
  • Such plates can be cut from any Y2SiO5 crystal for which the orientation is known, but to prepare nearly circular disc during the cutting process the Y2SiO5 crystal should be grown in a direction which is parallel to the normal of the cutting plane. Precise orientation of the bulk crystals will always be necessary.
  • This crystallographic direction lies normal to the ⁇ 010> and at -95.34° from the plane required for the CRT faceplates.
  • the Czochralski crystals may then be oriented along the ⁇ 04> rotated to bring the ⁇ 010> to be vertical; and then turned 5.34° counterclockwise to orient for faceplate slicing.
  • the selection of glass for fabrication of the CRT tube depends on the thermal expansion of the single crystal Y2SiO5 oriented for isotropic thermal expansion in the plane of the faceplate as described above. Any glass suitable for use in a CRT and with the required thermal expansion can be used. Particularly useful is SBW glass.
  • These phosphors are also of use in conventional cathode ray tubes in which a powder is attached to the inside surface of the cathode ray tube.
  • These powders are conventionally made by solid state reaction where the component oxides (yttrium oxide and silicon oxide in the case of yttrium orthosilicate) plus the desired rare-earth oxides are thoroughly mixed together and reacted generally at a temperature below their melting point.
  • the powders used in the fabrication of the conventional cathode ray tube generally have small particle size.
  • the conventional cathode ray tube is generally made of glass in which the phosphor powder is attached to the inside surface of the faceplate by allowing a water slurry of said phosphor powder to settle on the inside surface of the faceplate and then decanting off the excess liquid.
  • the faceplate is then fired to dry the powder, covered with a lacquer, and then aluminized to provide the electrode necessary for operation of the cathode ray tube.
  • the lacquer is baked off to provide the final surface of the faceplate.
  • Typical powder phosphors made for such an application are as follows:
EP87306116A 1986-07-14 1987-07-10 Anzeigevorrichtung mit Kristall- und Pulverphosphoren Withdrawn EP0253589A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88522986A 1986-07-14 1986-07-14
US885229 1986-07-14

Publications (1)

Publication Number Publication Date
EP0253589A1 true EP0253589A1 (de) 1988-01-20

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EP87306116A Withdrawn EP0253589A1 (de) 1986-07-14 1987-07-10 Anzeigevorrichtung mit Kristall- und Pulverphosphoren

Country Status (3)

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EP (1) EP0253589A1 (de)
JP (1) JPS6339983A (de)
KR (1) KR880002230A (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0454907A1 (de) * 1990-05-03 1991-11-06 Agfa-Gevaert N.V. Reproduktion von Röntgenbildern mit einem photostimulierbaren Leuchtstoff
EP0483003A1 (de) * 1990-10-25 1992-04-29 Commissariat A L'energie Atomique Laser mit gemischten Yttrium- und Lanthanidsilicateneinkristallen
EP0510901A3 (en) * 1991-04-26 1993-02-17 American Telephone And Telegraph Company Optical amplifiers involving single crystal waveguides
EP0655748A1 (de) * 1993-11-25 1995-05-31 Minnesota Mining And Manufacturing Company Röntgenstrahlenverstärkungsschirmen und Verfahren zu ihrer Herstellung
WO2007080555A1 (en) * 2006-01-16 2007-07-19 Koninklijke Philips Electronics N.V. Phosphor converted light emitting device
WO2007080541A1 (en) 2006-01-16 2007-07-19 Philips Intellectual Property & Standards Gmbh Light emitting device with a eu-comprising phosphor material
US9196800B2 (en) 1996-06-26 2015-11-24 Osram Gmbh Light-radiating semiconductor component with a luminescence conversion element

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8786171B2 (en) 2010-09-20 2014-07-22 Ocean's King Lighting Science & Technology Co., Ltd. Field emission light source device and manufacturing method thereof
US20130175918A1 (en) * 2010-09-26 2013-07-11 Ocean's King Lighting Science & Technology Co, Ltd Field emission anode plate, field emission light source and manufacturing method for light source
US20130209794A1 (en) * 2010-12-20 2013-08-15 Ocean's King Lighting Science & Technology Co., Ltd. Light emission apparatus and manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1938688A1 (de) * 1968-08-09 1970-02-12 Philips Nv Elektronenstrahlroehre
DE2035258A1 (en) * 1970-07-16 1972-03-09 Fernseh Gmbh Cathode ray tube phosphor - of terbium-activated yttrium silicate
DE2202485A1 (de) * 1972-01-19 1973-08-09 Siemens Ag Verfahren zur herstellung mit cer aktivierter yttriumsilikat-leuchtstoffe
US3758413A (en) * 1970-02-04 1973-09-11 Gte Laboratories Inc Terbium activated yttrium silicate phosphors
DE2409953A1 (de) * 1973-03-02 1974-09-19 Matsushita Electric Ind Co Ltd Cer-aktivierter yttriumsilikatphosphor und verfahren zu seiner herstellung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1938688A1 (de) * 1968-08-09 1970-02-12 Philips Nv Elektronenstrahlroehre
US3758413A (en) * 1970-02-04 1973-09-11 Gte Laboratories Inc Terbium activated yttrium silicate phosphors
DE2035258A1 (en) * 1970-07-16 1972-03-09 Fernseh Gmbh Cathode ray tube phosphor - of terbium-activated yttrium silicate
DE2202485A1 (de) * 1972-01-19 1973-08-09 Siemens Ag Verfahren zur herstellung mit cer aktivierter yttriumsilikat-leuchtstoffe
DE2409953A1 (de) * 1973-03-02 1974-09-19 Matsushita Electric Ind Co Ltd Cer-aktivierter yttriumsilikatphosphor und verfahren zu seiner herstellung

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0454907A1 (de) * 1990-05-03 1991-11-06 Agfa-Gevaert N.V. Reproduktion von Röntgenbildern mit einem photostimulierbaren Leuchtstoff
EP0483003A1 (de) * 1990-10-25 1992-04-29 Commissariat A L'energie Atomique Laser mit gemischten Yttrium- und Lanthanidsilicateneinkristallen
FR2668464A1 (fr) * 1990-10-25 1992-04-30 Commissariat Energie Atomique Silicates mixtes d'yttrium et de lanthanide et laser utilisant des monocristaux de ces silicates.
US5173911A (en) * 1990-10-25 1992-12-22 Commissariat A L'energie Atomique Mixed silicates of yttrium and lanthanide and laser using monocrystals of these silicates
EP0510901A3 (en) * 1991-04-26 1993-02-17 American Telephone And Telegraph Company Optical amplifiers involving single crystal waveguides
EP0655748A1 (de) * 1993-11-25 1995-05-31 Minnesota Mining And Manufacturing Company Röntgenstrahlenverstärkungsschirmen und Verfahren zu ihrer Herstellung
US5540947A (en) * 1993-11-25 1996-07-30 Minnesota Mining And Manufacturing Company X-ray intensifying screens and method of manufacturing the same
US9196800B2 (en) 1996-06-26 2015-11-24 Osram Gmbh Light-radiating semiconductor component with a luminescence conversion element
WO2007080555A1 (en) * 2006-01-16 2007-07-19 Koninklijke Philips Electronics N.V. Phosphor converted light emitting device
WO2007080541A1 (en) 2006-01-16 2007-07-19 Philips Intellectual Property & Standards Gmbh Light emitting device with a eu-comprising phosphor material

Also Published As

Publication number Publication date
JPS6339983A (ja) 1988-02-20
KR880002230A (ko) 1988-04-29

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Inventor name: BERKSTRESSER, GEORGE WAYNE