DE69032732D1 - Infrarotdetektor und Bildaufnahmeeinrichtung - Google Patents

Infrarotdetektor und Bildaufnahmeeinrichtung

Info

Publication number
DE69032732D1
DE69032732D1 DE69032732T DE69032732T DE69032732D1 DE 69032732 D1 DE69032732 D1 DE 69032732D1 DE 69032732 T DE69032732 T DE 69032732T DE 69032732 T DE69032732 T DE 69032732T DE 69032732 D1 DE69032732 D1 DE 69032732D1
Authority
DE
Germany
Prior art keywords
image acquisition
acquisition device
infrared detector
infrared
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69032732T
Other languages
English (en)
Other versions
DE69032732T2 (de
Inventor
Chang-Feng Wan
Frank C Sulzbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69032732D1 publication Critical patent/DE69032732D1/de
Publication of DE69032732T2 publication Critical patent/DE69032732T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1133—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a conductor-insulator-semiconductor diode or a CCD device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69032732T 1989-08-30 1990-08-07 Infrarotdetektor und Bildaufnahmeeinrichtung Expired - Fee Related DE69032732T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/400,603 US4968886A (en) 1989-08-30 1989-08-30 Infrared detector and method

Publications (2)

Publication Number Publication Date
DE69032732D1 true DE69032732D1 (de) 1998-12-03
DE69032732T2 DE69032732T2 (de) 1999-05-06

Family

ID=23584271

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69032732T Expired - Fee Related DE69032732T2 (de) 1989-08-30 1990-08-07 Infrarotdetektor und Bildaufnahmeeinrichtung
DE69023307T Expired - Fee Related DE69023307T2 (de) 1989-08-30 1990-08-07 Infrarot-Detektor und Herstellungsverfahren.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69023307T Expired - Fee Related DE69023307T2 (de) 1989-08-30 1990-08-07 Infrarot-Detektor und Herstellungsverfahren.

Country Status (3)

Country Link
US (1) US4968886A (de)
EP (2) EP0637085B1 (de)
DE (2) DE69032732T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3184031B2 (ja) * 1993-08-25 2001-07-09 富士通株式会社 光半導体素子装置及び光半導体装置の製造方法
US5449908A (en) * 1993-12-30 1995-09-12 Texas Instruments Incorporated Hybrid CCD imaging
GB2291264B (en) * 1994-07-07 1998-07-29 Hyundai Electronics Ind Method for forming a metallic barrier layer in semiconductor device and device made by the method
US5652150A (en) * 1995-06-07 1997-07-29 Texas Instruments Incorporated Hybrid CCD imaging
KR100983818B1 (ko) * 2009-09-02 2010-09-27 한국전자통신연구원 볼로미터용 저항재료, 이를 이용한 적외선 검출기용 볼로미터, 및 이의 제조방법
JP5677921B2 (ja) * 2010-09-27 2015-02-25 富士フイルム株式会社 光電変換素子の製造方法
GB2598117A (en) * 2020-08-18 2022-02-23 Ibmetrix Ltd Photo-capacitance sensor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU635516A1 (ru) * 1975-03-03 1978-11-30 Институт химии Уральского научного центра АН СССР Токопровод щий материал
US3989946A (en) * 1975-03-31 1976-11-02 Texas Instruments Incorporated Arrays for infrared image detection
US4032783A (en) * 1975-06-09 1977-06-28 Hughes Aircraft Company Pyroelectric radiation sensor and imaging device utilizing same
JPS5690569A (en) * 1979-12-24 1981-07-22 Shunpei Yamazaki Photoelectric transducer
JPS57104278A (en) * 1980-12-22 1982-06-29 Semiconductor Energy Lab Co Ltd Photoelectric converting device
ATE12760T1 (de) * 1981-10-09 1985-05-15 Bosch Gmbh Robert Gegen umwelteinfluesse bestaendiges mehrschichtsystem fuer waermeschutzanwendung.
DE3140100C2 (de) * 1981-10-09 1986-11-27 Robert Bosch Gmbh, 7000 Stuttgart Mehrschichtsystem für Wärmeschutzanwendung
JPS5969976A (ja) * 1982-10-15 1984-04-20 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
EP0137988B1 (de) * 1983-08-31 1989-11-29 Texas Instruments Incorporated Infrarot-Bildwandler
US4684812A (en) * 1983-08-31 1987-08-04 Texas Instruments Incorporated Switching circuit for a detector array
US4786939A (en) * 1985-08-23 1988-11-22 Konishiroku Photo Industry Co., Ltd. Image forming apparatus
US4803375A (en) * 1985-12-27 1989-02-07 Kabushiki Kaisha Toshiba Image sensors and methods of manufacturing same including semiconductor layer over entire substrate surface
CA1333270C (en) * 1987-03-26 1994-11-29 Ppg Industries Ohio, Inc. Sputtered titanium oxynitride films

Also Published As

Publication number Publication date
EP0637085B1 (de) 1998-10-28
DE69032732T2 (de) 1999-05-06
DE69023307T2 (de) 1996-06-27
EP0637085A1 (de) 1995-02-01
US4968886A (en) 1990-11-06
EP0416299B1 (de) 1995-11-02
EP0416299A3 (en) 1991-09-18
EP0416299A2 (de) 1991-03-13
DE69023307D1 (de) 1995-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee