DE69031103D1 - Verfahren zur Herstellung einer Ohmschen Elektrode auf einer GaAlAs Schicht - Google Patents

Verfahren zur Herstellung einer Ohmschen Elektrode auf einer GaAlAs Schicht

Info

Publication number
DE69031103D1
DE69031103D1 DE69031103T DE69031103T DE69031103D1 DE 69031103 D1 DE69031103 D1 DE 69031103D1 DE 69031103 T DE69031103 T DE 69031103T DE 69031103 T DE69031103 T DE 69031103T DE 69031103 D1 DE69031103 D1 DE 69031103D1
Authority
DE
Germany
Prior art keywords
producing
ohmic electrode
gaalas layer
gaalas
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031103T
Other languages
English (en)
Other versions
DE69031103T2 (de
Inventor
Toshihiko Ibuka
Masahiro Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Publication of DE69031103D1 publication Critical patent/DE69031103D1/de
Application granted granted Critical
Publication of DE69031103T2 publication Critical patent/DE69031103T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
DE69031103T 1989-08-30 1990-08-29 Verfahren zur Herstellung einer Ohmschen Elektrode auf einer GaAlAs Schicht Expired - Fee Related DE69031103T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1225903A JP2907452B2 (ja) 1989-08-30 1989-08-30 化合物半導体用電極

Publications (2)

Publication Number Publication Date
DE69031103D1 true DE69031103D1 (de) 1997-08-28
DE69031103T2 DE69031103T2 (de) 1998-01-22

Family

ID=16836695

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031103T Expired - Fee Related DE69031103T2 (de) 1989-08-30 1990-08-29 Verfahren zur Herstellung einer Ohmschen Elektrode auf einer GaAlAs Schicht

Country Status (4)

Country Link
US (2) US5192994A (de)
EP (1) EP0419062B1 (de)
JP (1) JP2907452B2 (de)
DE (1) DE69031103T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69128123T2 (de) * 1990-08-31 1998-03-05 Texas Instruments Inc Verfahren zum Herstellen selbst-ausrichtender bipolarer Transistoren mit Heteroübergang
US5317190A (en) * 1991-10-25 1994-05-31 International Business Machines Corporation Oxygen assisted ohmic contact formation to N-type gallium arsenide
US5633047A (en) * 1994-02-22 1997-05-27 International Business Machines Corporation Electronic devices having metallurgies containing copper-semiconductor compounds
DE4405716C2 (de) * 1994-02-23 1996-10-31 Telefunken Microelectron Verfahren zur Herstellung von ohmschen Kontakten für Verbindungshalbleiter
US5523623A (en) * 1994-03-09 1996-06-04 Matsushita Electric Industrial Co., Ltd. Ohmic electrode for a p-type compound semiconductor and a bipolar transistor incorporating the ohmic electrode
US5550081A (en) * 1994-04-08 1996-08-27 Board Of Trustees Of The University Of Illinois Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment
US5924002A (en) * 1994-12-22 1999-07-13 Sony Corporation Method of manufacturing a semiconductor device having ohmic electrode
DE19958096B4 (de) * 1999-12-02 2012-04-19 Telefonaktiebolaget Lm Ericsson (Publ) Verfahren zum Entwerfen einer Filterschaltung
WO2002031865A1 (en) 2000-10-13 2002-04-18 Emcore Corporation Method of making an electrode
KR100955953B1 (ko) * 2007-10-31 2010-05-03 주식회사 부강시너지 배수로용 블록
DE102013104953B4 (de) * 2013-05-14 2023-03-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
RU2757176C1 (ru) * 2021-03-31 2021-10-11 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора с многослойными проводниками

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522938B2 (de) * 1973-03-09 1980-06-19
JPS5736749B2 (de) * 1973-09-26 1982-08-05
DE2359640C2 (de) * 1973-11-30 1983-09-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrischer Anschlußkontakt an einen Halbleiterkörper und Verwendung
JPS5394873A (en) * 1977-01-31 1978-08-19 Mitsubishi Electric Corp Manufacture of ohmic contact electrode
JPS5530834A (en) * 1978-08-25 1980-03-04 Nec Corp Method of forming ohmic contact in semiconductor pellet
JPS59500542A (ja) * 1982-04-12 1984-03-29 モトロ−ラ・インコ−ポレ−テツド Ｎ型ＧａＡｓ用のオ−ム接触装置
US4853346A (en) * 1987-12-31 1989-08-01 International Business Machines Corporation Ohmic contacts for semiconductor devices and method for forming ohmic contacts
US4927782A (en) * 1989-06-27 1990-05-22 The United States Of America As Represented By The Secretary Of The Navy Method of making self-aligned GaAs/AlGaAs FET's

Also Published As

Publication number Publication date
US5284798A (en) 1994-02-08
US5192994A (en) 1993-03-09
JP2907452B2 (ja) 1999-06-21
EP0419062A3 (en) 1993-08-25
EP0419062A2 (de) 1991-03-27
DE69031103T2 (de) 1998-01-22
JPH0387066A (ja) 1991-04-11
EP0419062B1 (de) 1997-07-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee