US5148395A
(en)
*
|
1989-04-26 |
1992-09-15 |
Exar Corporation |
Dual eeprom cell with current mirror differential read
|
JP2825135B2
(ja)
*
|
1990-03-06 |
1998-11-18 |
富士通株式会社 |
半導体記憶装置及びその情報書込読出消去方法
|
US5161157A
(en)
*
|
1990-03-12 |
1992-11-03 |
Xicor, Inc. |
Field-programmable redundancy apparatus for memory arrays
|
JP2829156B2
(ja)
*
|
1991-07-25 |
1998-11-25 |
株式会社東芝 |
不揮発性半導体記憶装置の冗長回路
|
US5353248A
(en)
*
|
1992-04-14 |
1994-10-04 |
Altera Corporation |
EEPROM-backed FIFO memory
|
US5657332A
(en)
|
1992-05-20 |
1997-08-12 |
Sandisk Corporation |
Soft errors handling in EEPROM devices
|
US5748525A
(en)
*
|
1993-10-15 |
1998-05-05 |
Advanced Micro Devices, Inc. |
Array cell circuit with split read/write line
|
US5440508A
(en)
*
|
1994-02-09 |
1995-08-08 |
Atmel Corporation |
Zero power high speed programmable circuit device architecture
|
EP0675501B1
(de)
*
|
1994-03-31 |
2001-06-13 |
STMicroelectronics S.r.l. |
Nichtflüchtiges Speicherelement mit doppelt programmierbarer Zelle und entsprechende Leseschaltung für Redundanzschaltung
|
US5566110A
(en)
*
|
1995-03-21 |
1996-10-15 |
Texas Instruments Incorporated |
Electrically erasable programmable read only memory and method of operation
|
US5617352A
(en)
*
|
1995-12-13 |
1997-04-01 |
The United States Of America As Represented By The Secretary Of The Navy |
Non-volatile, bidirectional, electrically programmable integrated memory element implemented using double polysilicon
|
US5781921A
(en)
*
|
1996-05-06 |
1998-07-14 |
Ohmeda Inc. |
Method and apparatus to effect firmware upgrades using a removable memory device under software control
|
US5959885A
(en)
*
|
1997-03-27 |
1999-09-28 |
Xilinx, Inc. |
Non-volatile memory array using single poly EEPROM in standard CMOS process
|
US5949712A
(en)
*
|
1997-03-27 |
1999-09-07 |
Xilinx, Inc. |
Non-volatile memory array using gate breakdown structure
|
JP3214395B2
(ja)
*
|
1997-05-20 |
2001-10-02 |
日本電気株式会社 |
不揮発性半導体記憶装置
|
US6163480A
(en)
*
|
1997-12-29 |
2000-12-19 |
Honeywell International Inc. |
Memory with high integrity memory cells
|
KR100316719B1
(ko)
*
|
1999-12-29 |
2001-12-13 |
윤종용 |
채널 버스 라인의 특성 열화를 방지하는 출력 드라이버 및이를 내장한 반도체 메모리 장치들을 장착하는 메모리 모듈
|
US6414873B1
(en)
|
2001-03-16 |
2002-07-02 |
Simtek Corporation |
nvSRAM with multiple non-volatile memory cells for each SRAM memory cell
|
US6493257B1
(en)
|
2002-03-27 |
2002-12-10 |
International Business Machines Corporation |
CMOS state saving latch
|
US7058849B2
(en)
*
|
2002-07-02 |
2006-06-06 |
Micron Technology, Inc. |
Use of non-volatile memory to perform rollback function
|
US6944042B2
(en)
*
|
2002-12-31 |
2005-09-13 |
Texas Instruments Incorporated |
Multiple bit memory cells and methods for reading non-volatile data
|
US7113017B2
(en)
|
2004-07-01 |
2006-09-26 |
Intersil Americas Inc. |
Floating gate analog voltage level shift circuit and method for producing a voltage reference that operates on a low supply voltage
|
US6898123B2
(en)
*
|
2003-01-07 |
2005-05-24 |
Intersil Americas Inc. |
Differential dual floating gate circuit and method for programming
|
US6867622B2
(en)
*
|
2003-01-07 |
2005-03-15 |
Xicor, Inc. |
Method and apparatus for dual conduction analog programming
|
US6870764B2
(en)
*
|
2003-01-21 |
2005-03-22 |
Xicor Corporation |
Floating gate analog voltage feedback circuit
|
US6914812B2
(en)
*
|
2003-01-28 |
2005-07-05 |
Intersil America Inc. |
Tunnel device level shift circuit
|
US6815983B2
(en)
*
|
2003-01-28 |
2004-11-09 |
Xicor, Inc. |
Analog floating gate voltage sense during dual conduction programming
|
US6894928B2
(en)
|
2003-01-28 |
2005-05-17 |
Intersil Americas Inc. |
Output voltage compensating circuit and method for a floating gate reference voltage generator
|
US6847551B2
(en)
*
|
2003-01-28 |
2005-01-25 |
Xicor, Inc. |
Apparatus for feedback using a tunnel device
|
US6829164B2
(en)
*
|
2003-02-14 |
2004-12-07 |
Xicor Corporation |
Differential floating gate circuit and method for programming
|
US6839299B1
(en)
*
|
2003-07-24 |
2005-01-04 |
International Business Machines Corporation |
Method and structure for reducing gate leakage and threshold voltage fluctuation in memory cells
|
US20050083743A1
(en)
*
|
2003-09-09 |
2005-04-21 |
Integrated Magnetoelectronics Corporation A California Corporation |
Nonvolatile sequential machines
|
US7012835B2
(en)
|
2003-10-03 |
2006-03-14 |
Sandisk Corporation |
Flash memory data correction and scrub techniques
|
US6927614B2
(en)
*
|
2003-10-23 |
2005-08-09 |
International Business Machines Corporation |
High performance state saving circuit
|
US7429888B2
(en)
*
|
2004-01-05 |
2008-09-30 |
Intersil Americas, Inc. |
Temperature compensation for floating gate circuits
|
US7716538B2
(en)
|
2006-09-27 |
2010-05-11 |
Sandisk Corporation |
Memory with cell population distribution assisted read margining
|
US7886204B2
(en)
|
2006-09-27 |
2011-02-08 |
Sandisk Corporation |
Methods of cell population distribution assisted read margining
|
US20080151654A1
(en)
|
2006-12-22 |
2008-06-26 |
Allan James D |
Method and apparatus to implement a reset function in a non-volatile static random access memory
|
US7911830B2
(en)
|
2007-05-17 |
2011-03-22 |
Integrated Magnetoelectronics |
Scalable nonvolatile memory
|
KR20090053140A
(ko)
*
|
2007-11-22 |
2009-05-27 |
삼성전자주식회사 |
반도체 소자 및 그 형성 방법
|
US8687421B2
(en)
|
2011-11-21 |
2014-04-01 |
Sandisk Technologies Inc. |
Scrub techniques for use with dynamic read
|
US9001583B2
(en)
*
|
2012-10-15 |
2015-04-07 |
Aplus Flash Technology, Inc. |
On-chip HV and LV capacitors acting as the second back-up supplies for NVSRAM auto-store operation
|
US8947122B2
(en)
*
|
2013-01-14 |
2015-02-03 |
Cypress Semiconductor Corporation |
Non-volatile latch structures with small area for FPGA
|
FR3007185B1
(fr)
|
2013-06-12 |
2015-06-19 |
St Microelectronics Rousset |
Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement
|
FR3007186B1
(fr)
|
2013-06-12 |
2016-09-09 |
Stmicroelectronics Rousset |
Dispositif de memoire compact associant un plan memoire du type sram et un plan memoire du type non volatil, et procedes de fonctionnement
|
FR3008534B1
(fr)
|
2013-07-09 |
2019-06-28 |
Stmicroelectronics (Rousset) Sas |
Procede de gestion du fonctionnement d'un dispositif de memoire associant un plan-memoire du type sram et un plan memoire du type non volatil, et dispositif de memoire correspondant
|
US9230689B2
(en)
|
2014-03-17 |
2016-01-05 |
Sandisk Technologies Inc. |
Finding read disturbs on non-volatile memories
|
FR3018944A1
(fr)
|
2014-03-21 |
2015-09-25 |
St Microelectronics Rousset |
Dispositif de memoire associant un plan memoire du type sram et un plan-memoire du type non volatil, durci contre des basculements accidentels
|
FR3018952B1
(fr)
|
2014-03-21 |
2016-04-15 |
Stmicroelectronics Rousset |
Structure integree comportant des transistors mos voisins
|
US9378812B2
(en)
|
2014-04-30 |
2016-06-28 |
Freescale Semiconductor, Inc. |
Non-volatile memory using bi-directional resistive elements
|
US9666276B2
(en)
|
2014-04-30 |
2017-05-30 |
Nxp Usa, Inc. |
Non-volatile memory using bi-directional resistive elements
|
US9318158B2
(en)
|
2014-05-27 |
2016-04-19 |
Freescale Semiconductor, Inc. |
Non-volatile memory using bi-directional resistive elements
|
US9779807B2
(en)
|
2014-07-31 |
2017-10-03 |
Nxp Usa, Inc. |
Non-volatile memory using bi-directional resistive elements
|
US9552171B2
(en)
|
2014-10-29 |
2017-01-24 |
Sandisk Technologies Llc |
Read scrub with adaptive counter management
|
US9978456B2
(en)
|
2014-11-17 |
2018-05-22 |
Sandisk Technologies Llc |
Techniques for reducing read disturb in partially written blocks of non-volatile memory
|
US9349479B1
(en)
|
2014-11-18 |
2016-05-24 |
Sandisk Technologies Inc. |
Boundary word line operation in nonvolatile memory
|
US9281042B1
(en)
|
2014-12-17 |
2016-03-08 |
Freescale Semiconductor, Inc. |
Non-volatile memory using bi-directional resistive elements and capacitive elements
|
US9530501B2
(en)
|
2014-12-31 |
2016-12-27 |
Freescale Semiconductor, Inc. |
Non-volatile static random access memory (NVSRAM) having a shared port
|
US9449700B2
(en)
|
2015-02-13 |
2016-09-20 |
Sandisk Technologies Llc |
Boundary word line search and open block read methods with reduced read disturb
|
US9466394B1
(en)
|
2015-04-09 |
2016-10-11 |
Freescale Semiconductor, Inc. |
Mismatch-compensated sense amplifier for highly scaled technology
|
US11115022B2
(en)
*
|
2015-05-07 |
2021-09-07 |
Northwestern University |
System and method for integrated circuit usage tracking circuit with fast tracking time for hardware security and re-configurability
|
US9653154B2
(en)
|
2015-09-21 |
2017-05-16 |
Sandisk Technologies Llc |
Write abort detection for multi-state memories
|
US9741923B2
(en)
|
2015-09-25 |
2017-08-22 |
Integrated Magnetoelectronics Corporation |
SpinRAM
|
US9792981B2
(en)
|
2015-09-29 |
2017-10-17 |
Nxp Usa, Inc. |
Memory with read circuitry and method of operating
|