DE69029132D1 - Novramzell unter verwendung von zwei differentialen entkopplungsbaren nichtflüchtigen speicherelementen - Google Patents

Novramzell unter verwendung von zwei differentialen entkopplungsbaren nichtflüchtigen speicherelementen

Info

Publication number
DE69029132D1
DE69029132D1 DE69029132T DE69029132T DE69029132D1 DE 69029132 D1 DE69029132 D1 DE 69029132D1 DE 69029132 T DE69029132 T DE 69029132T DE 69029132 T DE69029132 T DE 69029132T DE 69029132 D1 DE69029132 D1 DE 69029132D1
Authority
DE
Germany
Prior art keywords
volatile memory
memory elements
isolating non
differential
novram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69029132T
Other languages
English (en)
Other versions
DE69029132T2 (de
Inventor
Daniel Charles Guterman
Isao Nojima
Ping Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xicor LLC
Original Assignee
Xicor LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xicor LLC filed Critical Xicor LLC
Application granted granted Critical
Publication of DE69029132D1 publication Critical patent/DE69029132D1/de
Publication of DE69029132T2 publication Critical patent/DE69029132T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
DE69029132T 1989-04-07 1990-03-21 Novramzell unter verwendung von zwei differentialen entkopplungsbaren nichtflüchtigen speicherelementen Expired - Fee Related DE69029132T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/335,112 US4980859A (en) 1989-04-07 1989-04-07 NOVRAM cell using two differential decouplable nonvolatile memory elements
PCT/US1990/001514 WO1990012402A1 (en) 1989-04-07 1990-03-21 Improved novram cell using two differential, decouplable nonvolatile memory elements

Publications (2)

Publication Number Publication Date
DE69029132D1 true DE69029132D1 (de) 1996-12-19
DE69029132T2 DE69029132T2 (de) 1997-03-06

Family

ID=23310310

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69029132T Expired - Fee Related DE69029132T2 (de) 1989-04-07 1990-03-21 Novramzell unter verwendung von zwei differentialen entkopplungsbaren nichtflüchtigen speicherelementen

Country Status (5)

Country Link
US (1) US4980859A (de)
EP (1) EP0467928B1 (de)
JP (1) JP2758718B2 (de)
DE (1) DE69029132T2 (de)
WO (1) WO1990012402A1 (de)

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US5161157A (en) * 1990-03-12 1992-11-03 Xicor, Inc. Field-programmable redundancy apparatus for memory arrays
JP2829156B2 (ja) * 1991-07-25 1998-11-25 株式会社東芝 不揮発性半導体記憶装置の冗長回路
US5353248A (en) * 1992-04-14 1994-10-04 Altera Corporation EEPROM-backed FIFO memory
US5657332A (en) 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US5748525A (en) * 1993-10-15 1998-05-05 Advanced Micro Devices, Inc. Array cell circuit with split read/write line
US5440508A (en) * 1994-02-09 1995-08-08 Atmel Corporation Zero power high speed programmable circuit device architecture
EP0675501B1 (de) * 1994-03-31 2001-06-13 STMicroelectronics S.r.l. Nichtflüchtiges Speicherelement mit doppelt programmierbarer Zelle und entsprechende Leseschaltung für Redundanzschaltung
US5566110A (en) * 1995-03-21 1996-10-15 Texas Instruments Incorporated Electrically erasable programmable read only memory and method of operation
US5617352A (en) * 1995-12-13 1997-04-01 The United States Of America As Represented By The Secretary Of The Navy Non-volatile, bidirectional, electrically programmable integrated memory element implemented using double polysilicon
US5781921A (en) * 1996-05-06 1998-07-14 Ohmeda Inc. Method and apparatus to effect firmware upgrades using a removable memory device under software control
US5959885A (en) * 1997-03-27 1999-09-28 Xilinx, Inc. Non-volatile memory array using single poly EEPROM in standard CMOS process
US5949712A (en) * 1997-03-27 1999-09-07 Xilinx, Inc. Non-volatile memory array using gate breakdown structure
JP3214395B2 (ja) * 1997-05-20 2001-10-02 日本電気株式会社 不揮発性半導体記憶装置
US6163480A (en) * 1997-12-29 2000-12-19 Honeywell International Inc. Memory with high integrity memory cells
KR100316719B1 (ko) * 1999-12-29 2001-12-13 윤종용 채널 버스 라인의 특성 열화를 방지하는 출력 드라이버 및이를 내장한 반도체 메모리 장치들을 장착하는 메모리 모듈
US6414873B1 (en) 2001-03-16 2002-07-02 Simtek Corporation nvSRAM with multiple non-volatile memory cells for each SRAM memory cell
US6493257B1 (en) 2002-03-27 2002-12-10 International Business Machines Corporation CMOS state saving latch
US7058849B2 (en) * 2002-07-02 2006-06-06 Micron Technology, Inc. Use of non-volatile memory to perform rollback function
US6944042B2 (en) * 2002-12-31 2005-09-13 Texas Instruments Incorporated Multiple bit memory cells and methods for reading non-volatile data
US7113017B2 (en) 2004-07-01 2006-09-26 Intersil Americas Inc. Floating gate analog voltage level shift circuit and method for producing a voltage reference that operates on a low supply voltage
US6898123B2 (en) * 2003-01-07 2005-05-24 Intersil Americas Inc. Differential dual floating gate circuit and method for programming
US6867622B2 (en) * 2003-01-07 2005-03-15 Xicor, Inc. Method and apparatus for dual conduction analog programming
US6870764B2 (en) * 2003-01-21 2005-03-22 Xicor Corporation Floating gate analog voltage feedback circuit
US6914812B2 (en) * 2003-01-28 2005-07-05 Intersil America Inc. Tunnel device level shift circuit
US6815983B2 (en) * 2003-01-28 2004-11-09 Xicor, Inc. Analog floating gate voltage sense during dual conduction programming
US6894928B2 (en) 2003-01-28 2005-05-17 Intersil Americas Inc. Output voltage compensating circuit and method for a floating gate reference voltage generator
US6847551B2 (en) * 2003-01-28 2005-01-25 Xicor, Inc. Apparatus for feedback using a tunnel device
US6829164B2 (en) * 2003-02-14 2004-12-07 Xicor Corporation Differential floating gate circuit and method for programming
US6839299B1 (en) * 2003-07-24 2005-01-04 International Business Machines Corporation Method and structure for reducing gate leakage and threshold voltage fluctuation in memory cells
US20050083743A1 (en) * 2003-09-09 2005-04-21 Integrated Magnetoelectronics Corporation A California Corporation Nonvolatile sequential machines
US7012835B2 (en) 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US6927614B2 (en) * 2003-10-23 2005-08-09 International Business Machines Corporation High performance state saving circuit
US7429888B2 (en) * 2004-01-05 2008-09-30 Intersil Americas, Inc. Temperature compensation for floating gate circuits
US7716538B2 (en) 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7886204B2 (en) 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US20080151654A1 (en) 2006-12-22 2008-06-26 Allan James D Method and apparatus to implement a reset function in a non-volatile static random access memory
US7911830B2 (en) 2007-05-17 2011-03-22 Integrated Magnetoelectronics Scalable nonvolatile memory
KR20090053140A (ko) * 2007-11-22 2009-05-27 삼성전자주식회사 반도체 소자 및 그 형성 방법
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
US9001583B2 (en) * 2012-10-15 2015-04-07 Aplus Flash Technology, Inc. On-chip HV and LV capacitors acting as the second back-up supplies for NVSRAM auto-store operation
US8947122B2 (en) * 2013-01-14 2015-02-03 Cypress Semiconductor Corporation Non-volatile latch structures with small area for FPGA
FR3007185B1 (fr) 2013-06-12 2015-06-19 St Microelectronics Rousset Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement
FR3007186B1 (fr) 2013-06-12 2016-09-09 Stmicroelectronics Rousset Dispositif de memoire compact associant un plan memoire du type sram et un plan memoire du type non volatil, et procedes de fonctionnement
FR3008534B1 (fr) 2013-07-09 2019-06-28 Stmicroelectronics (Rousset) Sas Procede de gestion du fonctionnement d'un dispositif de memoire associant un plan-memoire du type sram et un plan memoire du type non volatil, et dispositif de memoire correspondant
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
FR3018944A1 (fr) 2014-03-21 2015-09-25 St Microelectronics Rousset Dispositif de memoire associant un plan memoire du type sram et un plan-memoire du type non volatil, durci contre des basculements accidentels
FR3018952B1 (fr) 2014-03-21 2016-04-15 Stmicroelectronics Rousset Structure integree comportant des transistors mos voisins
US9378812B2 (en) 2014-04-30 2016-06-28 Freescale Semiconductor, Inc. Non-volatile memory using bi-directional resistive elements
US9666276B2 (en) 2014-04-30 2017-05-30 Nxp Usa, Inc. Non-volatile memory using bi-directional resistive elements
US9318158B2 (en) 2014-05-27 2016-04-19 Freescale Semiconductor, Inc. Non-volatile memory using bi-directional resistive elements
US9779807B2 (en) 2014-07-31 2017-10-03 Nxp Usa, Inc. Non-volatile memory using bi-directional resistive elements
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9281042B1 (en) 2014-12-17 2016-03-08 Freescale Semiconductor, Inc. Non-volatile memory using bi-directional resistive elements and capacitive elements
US9530501B2 (en) 2014-12-31 2016-12-27 Freescale Semiconductor, Inc. Non-volatile static random access memory (NVSRAM) having a shared port
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9466394B1 (en) 2015-04-09 2016-10-11 Freescale Semiconductor, Inc. Mismatch-compensated sense amplifier for highly scaled technology
US11115022B2 (en) * 2015-05-07 2021-09-07 Northwestern University System and method for integrated circuit usage tracking circuit with fast tracking time for hardware security and re-configurability
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
US9741923B2 (en) 2015-09-25 2017-08-22 Integrated Magnetoelectronics Corporation SpinRAM
US9792981B2 (en) 2015-09-29 2017-10-17 Nxp Usa, Inc. Memory with read circuitry and method of operating

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US3911464A (en) * 1973-05-29 1975-10-07 Ibm Nonvolatile semiconductor memory
US4271487A (en) * 1979-11-13 1981-06-02 Ncr Corporation Static volatile/non-volatile ram cell
US4510584A (en) * 1982-12-29 1985-04-09 Mostek Corporation MOS Random access memory cell with nonvolatile storage
FR2543727B1 (fr) * 1983-03-31 1988-06-17 Efcis Cellule de memoire ram non volatile a deux transistors mos a grille flottante a canal n
US4685083A (en) * 1985-10-03 1987-08-04 Thomson Components-Mostek Corporation Improved nonvolatile memory circuit using a dual node floating gate memory cell
US4686652A (en) * 1985-11-25 1987-08-11 Rockwell International Corporation Non-volatile RAM cell with single high voltage precharge
JPS62217493A (ja) * 1986-02-27 1987-09-24 Fujitsu Ltd 半導体不揮発性記憶装置

Also Published As

Publication number Publication date
US4980859A (en) 1990-12-25
JPH04506282A (ja) 1992-10-29
EP0467928A1 (de) 1992-01-29
WO1990012402A1 (en) 1990-10-18
DE69029132T2 (de) 1997-03-06
EP0467928A4 (en) 1993-01-07
EP0467928B1 (de) 1996-11-13
JP2758718B2 (ja) 1998-05-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee