DE69027641D1 - Nichtflüchtige Speicherzelle und ihr Herstellungsverfahren - Google Patents

Nichtflüchtige Speicherzelle und ihr Herstellungsverfahren

Info

Publication number
DE69027641D1
DE69027641D1 DE69027641T DE69027641T DE69027641D1 DE 69027641 D1 DE69027641 D1 DE 69027641D1 DE 69027641 T DE69027641 T DE 69027641T DE 69027641 T DE69027641 T DE 69027641T DE 69027641 D1 DE69027641 D1 DE 69027641D1
Authority
DE
Germany
Prior art keywords
memory cell
manufacturing process
volatile memory
volatile
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69027641T
Other languages
English (en)
Other versions
DE69027641T2 (de
Inventor
Hiroaki Hazama
Kazumi Nishinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69027641D1 publication Critical patent/DE69027641D1/de
Publication of DE69027641T2 publication Critical patent/DE69027641T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8616—Charge trapping diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE69027641T 1989-09-27 1990-09-26 Nichtflüchtige Speicherzelle und ihr Herstellungsverfahren Expired - Fee Related DE69027641T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1249311A JPH03112167A (ja) 1989-09-27 1989-09-27 不揮発性メモリセル

Publications (2)

Publication Number Publication Date
DE69027641D1 true DE69027641D1 (de) 1996-08-08
DE69027641T2 DE69027641T2 (de) 1996-12-05

Family

ID=17191104

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69027641T Expired - Fee Related DE69027641T2 (de) 1989-09-27 1990-09-26 Nichtflüchtige Speicherzelle und ihr Herstellungsverfahren

Country Status (3)

Country Link
EP (1) EP0420182B1 (de)
JP (1) JPH03112167A (de)
DE (1) DE69027641T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2965415B2 (ja) * 1991-08-27 1999-10-18 松下電器産業株式会社 半導体記憶装置
CN105513984B (zh) * 2014-09-24 2018-06-26 北大方正集团有限公司 Mos管的实际沟道长度的测试方法及装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878549A (en) * 1970-10-27 1975-04-15 Shumpei Yamazaki Semiconductor memories
DE2151508A1 (de) * 1971-04-06 1972-10-12 Robotron Veb K Integrierter Halbleiterspeicher
US4037243A (en) * 1974-07-01 1977-07-19 Motorola, Inc. Semi conductor memory cell utilizing sensing of variations in PN junction current conrolled by stored data
US3992701A (en) * 1975-04-10 1976-11-16 International Business Machines Corporation Non-volatile memory cell and array using substrate current
FR2437046A2 (fr) * 1976-10-20 1980-04-18 Texas Instruments France Cellule de memoire a grille flottante

Also Published As

Publication number Publication date
JPH03112167A (ja) 1991-05-13
DE69027641T2 (de) 1996-12-05
EP0420182A2 (de) 1991-04-03
EP0420182B1 (de) 1996-07-03
EP0420182A3 (en) 1993-01-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee