DE69025169D1 - Optische Vorrichtung mit Gitterstruktur - Google Patents

Optische Vorrichtung mit Gitterstruktur

Info

Publication number
DE69025169D1
DE69025169D1 DE69025169T DE69025169T DE69025169D1 DE 69025169 D1 DE69025169 D1 DE 69025169D1 DE 69025169 T DE69025169 T DE 69025169T DE 69025169 T DE69025169 T DE 69025169T DE 69025169 D1 DE69025169 D1 DE 69025169D1
Authority
DE
Germany
Prior art keywords
optical device
grating structure
grating
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69025169T
Other languages
English (en)
Other versions
DE69025169T2 (de
Inventor
Robert Anthony Morgan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69025169D1 publication Critical patent/DE69025169D1/de
Publication of DE69025169T2 publication Critical patent/DE69025169T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
DE69025169T 1989-12-29 1990-11-29 Optische Vorrichtung mit Gitterstruktur Expired - Fee Related DE69025169T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/458,851 US5056889A (en) 1989-12-29 1989-12-29 Optical device including a grating

Publications (2)

Publication Number Publication Date
DE69025169D1 true DE69025169D1 (de) 1996-03-14
DE69025169T2 DE69025169T2 (de) 1996-08-14

Family

ID=23822346

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69025169T Expired - Fee Related DE69025169T2 (de) 1989-12-29 1990-11-29 Optische Vorrichtung mit Gitterstruktur

Country Status (4)

Country Link
US (1) US5056889A (de)
EP (1) EP0448868B1 (de)
JP (1) JPH04123472A (de)
DE (1) DE69025169T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181108A (en) * 1991-10-07 1993-01-19 Greene Richard M Graphic input device with uniform sensitivity and no keystone distortion
US5416324A (en) * 1993-06-11 1995-05-16 Chun; Cornell S. L. Optical imaging device with integrated polarizer
US5485015A (en) * 1994-08-25 1996-01-16 The United States Of America As Represented By The Secretary Of The Army Quantum grid infrared photodetector
US5745864A (en) * 1994-10-04 1998-04-28 Nippondenso Co., Ltd. Vehicular information storage device and power outage-resistant storage system and method for the same
US5955221A (en) * 1997-11-21 1999-09-21 The Regents Of The University Of California Method and apparatus for fabrication of high gradient insulators with parallel surface conductors spaced less than one millimeter apart
SE515389C2 (sv) * 1999-03-12 2001-07-23 Saabtech Electronics Ab Kvantbrunnsbaserad och tvådimensionell detektor för IR- strålning och kamerasystem med sådan detektor
US6594422B2 (en) * 2001-05-02 2003-07-15 Motorola, Inc. Opto-coupling device structure and method therefor
US6633716B2 (en) * 2001-05-02 2003-10-14 Motorola, Inc. Optical device and method therefor
JP4386191B2 (ja) * 2004-12-15 2009-12-16 セイコーエプソン株式会社 光素子
JP4835837B2 (ja) * 2006-03-31 2011-12-14 日本電気株式会社 フォトダイオードとその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4536608A (en) * 1983-04-25 1985-08-20 Exxon Research And Engineering Co. Solar cell with two-dimensional hexagonal reflecting diffraction grating
US4815084A (en) * 1987-05-20 1989-03-21 Spectra Diode Laboratories, Inc. Semiconductor laser with integrated optical elements
JPH0732292B2 (ja) * 1987-06-17 1995-04-10 富士通株式会社 半導体発光装置
EP0309744A3 (de) * 1987-09-29 1989-06-28 Siemens Aktiengesellschaft Anordnung mit einem flächig sich erstreckenden Dünnfilmwellenleiter

Also Published As

Publication number Publication date
JPH04123472A (ja) 1992-04-23
EP0448868A1 (de) 1991-10-02
DE69025169T2 (de) 1996-08-14
US5056889A (en) 1991-10-15
EP0448868B1 (de) 1996-01-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee