DE69019493D1 - Optische Halbleiterspeicheranordnung für optische Datenspeicherung mit erhöhter Speicherdichte. - Google Patents

Optische Halbleiterspeicheranordnung für optische Datenspeicherung mit erhöhter Speicherdichte.

Info

Publication number
DE69019493D1
DE69019493D1 DE69019493T DE69019493T DE69019493D1 DE 69019493 D1 DE69019493 D1 DE 69019493D1 DE 69019493 T DE69019493 T DE 69019493T DE 69019493 T DE69019493 T DE 69019493T DE 69019493 D1 DE69019493 D1 DE 69019493D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
optical
memory arrangement
data storage
optical data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69019493T
Other languages
English (en)
Other versions
DE69019493T2 (de
Inventor
Shunichi Muto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69019493D1 publication Critical patent/DE69019493D1/de
Application granted granted Critical
Publication of DE69019493T2 publication Critical patent/DE69019493T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045—Recording
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/42—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically- coupled or feedback-coupled
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/041—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using photochromic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/005—Arrangements for writing information into, or reading information out from, a digital store with combined beam-and individual cell access
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Lasers (AREA)
DE69019493T 1989-12-29 1990-12-28 Optische Halbleiterspeicheranordnung für optische Datenspeicherung mit erhöhter Speicherdichte. Expired - Fee Related DE69019493T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1340420A JP3020529B2 (ja) 1989-12-29 1989-12-29 光駆動量子化装置

Publications (2)

Publication Number Publication Date
DE69019493D1 true DE69019493D1 (de) 1995-06-22
DE69019493T2 DE69019493T2 (de) 1995-09-21

Family

ID=18336782

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69019493T Expired - Fee Related DE69019493T2 (de) 1989-12-29 1990-12-28 Optische Halbleiterspeicheranordnung für optische Datenspeicherung mit erhöhter Speicherdichte.

Country Status (5)

Country Link
US (1) US5499206A (de)
EP (1) EP0435779B1 (de)
JP (1) JP3020529B2 (de)
KR (1) KR940002446B1 (de)
DE (1) DE69019493T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3455987B2 (ja) * 1993-02-26 2003-10-14 ソニー株式会社 量子箱集合素子および情報処理方法
JPH08172217A (ja) * 1994-12-19 1996-07-02 Fujitsu Ltd 光半導体装置
JP4854975B2 (ja) * 1995-04-28 2012-01-18 富士通株式会社 光半導体記憶装置の書込み読出し方法
US5754511A (en) * 1995-09-14 1998-05-19 Kabushiki Kaisha Toshiba Optical information reproduction by irradiating two laser beams into a recording medium of at least three energy levels and detecting absorption or photoluminescence
US5875052A (en) * 1997-09-05 1999-02-23 North Carolina State University Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials
AU2305399A (en) * 1997-11-10 1999-05-31 Don L. Kendall Quantum ridges and tips
FR2820517B1 (fr) * 2001-02-02 2003-05-16 Cit Alcatel Absorbant optique saturable et application a la regeneration d'un signal multiplexe en longueur d'onde
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6858862B2 (en) 2001-06-29 2005-02-22 Intel Corporation Discrete polymer memory array and method of making same
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
US6960479B2 (en) * 2001-07-20 2005-11-01 Intel Corporation Stacked ferroelectric memory device and method of making same
JP3974551B2 (ja) * 2003-04-28 2007-09-12 独立行政法人科学技術振興機構 機能素子およびその製造方法ならびに機能システム
JP4927765B2 (ja) * 2004-09-09 2012-05-09 国立大学法人北海道大学 機能素子の製造方法
US9478942B2 (en) * 2012-12-06 2016-10-25 The Board Of Trustees Of The University Of Illinois Transistor laser optical switching and memory techniques and devices
US10283933B1 (en) 2017-10-23 2019-05-07 The Board Of Trustees Of The University Of Illinois Transistor laser electrical and optical bistable switching

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4101976A (en) * 1977-02-14 1978-07-18 International Business Machines Corporation Frequency selective optical data storage system
US4103312A (en) * 1977-06-09 1978-07-25 International Business Machines Corporation Semiconductor memory devices
US4864536A (en) * 1986-06-05 1989-09-05 Quantex Corporation Optical memory system and method of using the same
JPS63177131A (ja) * 1987-01-19 1988-07-21 Hitachi Ltd 波長多重光学情報記録方法
US4933926A (en) * 1987-02-13 1990-06-12 Fuji Photo Film Co., Ltd. Image forming medium, method and apparatus
US4855950A (en) * 1987-04-17 1989-08-08 Kanegafuchi Chemical Industry Company, Limited Optical storage apparatus including a reversible, doping modulated, multilayer, amorphous element
US5010517A (en) * 1987-11-18 1991-04-23 Hitachi, Ltd. Semiconductor optical apparatus

Also Published As

Publication number Publication date
EP0435779A3 (en) 1991-10-30
EP0435779A2 (de) 1991-07-03
JP3020529B2 (ja) 2000-03-15
KR910013596A (ko) 1991-08-08
US5499206A (en) 1996-03-12
EP0435779B1 (de) 1995-05-17
DE69019493T2 (de) 1995-09-21
JPH03203267A (ja) 1991-09-04
KR940002446B1 (ko) 1994-03-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee