DE69019242D1 - Magnetwiderstandseffektwandler. - Google Patents

Magnetwiderstandseffektwandler.

Info

Publication number
DE69019242D1
DE69019242D1 DE69019242T DE69019242T DE69019242D1 DE 69019242 D1 DE69019242 D1 DE 69019242D1 DE 69019242 T DE69019242 T DE 69019242T DE 69019242 T DE69019242 T DE 69019242T DE 69019242 D1 DE69019242 D1 DE 69019242D1
Authority
DE
Germany
Prior art keywords
magnetic resistance
resistance effect
effect converter
converter
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69019242T
Other languages
English (en)
Other versions
DE69019242T2 (de
Inventor
Alain Friederich
Gerard Creuzet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE69019242D1 publication Critical patent/DE69019242D1/de
Application granted granted Critical
Publication of DE69019242T2 publication Critical patent/DE69019242T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/928—Magnetic property
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12632—Four or more distinct components with alternate recurrence of each type component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
DE69019242T 1989-06-27 1990-06-19 Magnetwiderstandseffektwandler. Expired - Fee Related DE69019242T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8908545A FR2648942B1 (fr) 1989-06-27 1989-06-27 Capteur a effet magnetoresistif

Publications (2)

Publication Number Publication Date
DE69019242D1 true DE69019242D1 (de) 1995-06-14
DE69019242T2 DE69019242T2 (de) 1995-09-21

Family

ID=9383160

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69019242T Expired - Fee Related DE69019242T2 (de) 1989-06-27 1990-06-19 Magnetwiderstandseffektwandler.

Country Status (5)

Country Link
US (1) US5134533A (de)
EP (1) EP0406060B1 (de)
JP (1) JP3058338B2 (de)
DE (1) DE69019242T2 (de)
FR (1) FR2648942B1 (de)

Families Citing this family (83)

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JP3088478B2 (ja) * 1990-05-21 2000-09-18 財団法人生産開発科学研究所 磁気抵抗効果素子
US5390061A (en) 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
JP3483895B2 (ja) * 1990-11-01 2004-01-06 株式会社東芝 磁気抵抗効果膜
JP2690623B2 (ja) * 1991-02-04 1997-12-10 松下電器産業株式会社 磁気抵抗効果素子
US5277991A (en) * 1991-03-08 1994-01-11 Matsushita Electric Industrial Co., Ltd. Magnetoresistive materials
EP0506433B2 (de) * 1991-03-29 2007-08-01 Kabushiki Kaisha Toshiba Magnetowiderstandseffekt-Element
FR2677811A1 (fr) * 1991-06-11 1992-12-18 Philips Electronique Lab Dispositif incluant un super-reseau de couches ayant des proprietes de magnetoresistance geante realisees sur un substrat semiconducteur.
JPH05183212A (ja) * 1991-07-30 1993-07-23 Toshiba Corp 磁気抵抗効果素子
US5341261A (en) * 1991-08-26 1994-08-23 International Business Machines Corporation Magnetoresistive sensor having multilayer thin film structure
US5304975A (en) * 1991-10-23 1994-04-19 Kabushiki Kaisha Toshiba Magnetoresistance effect element and magnetoresistance effect sensor
US5633092A (en) * 1991-12-10 1997-05-27 British Technology Group Ltd. Magnetostrictive material
FR2685489B1 (fr) * 1991-12-23 1994-08-05 Thomson Csf Capteur de champ magnetique faible a effet magnetoresistif.
JP2812042B2 (ja) * 1992-03-13 1998-10-15 松下電器産業株式会社 磁気抵抗センサー
FR2693021B1 (fr) * 1992-06-26 1994-08-26 Thomson Csf Détecteur de champ magnétique.
JPH0629589A (ja) * 1992-07-07 1994-02-04 Nec Corp 磁気抵抗効果素子
JPH06220609A (ja) * 1992-07-31 1994-08-09 Sony Corp 磁気抵抗効果膜及びその製造方法並びにそれを用いた磁気抵抗効果素子、磁気抵抗効果型磁気ヘッド
US5287238A (en) * 1992-11-06 1994-02-15 International Business Machines Corporation Dual spin valve magnetoresistive sensor
EP0678213B1 (de) * 1992-11-16 2003-02-19 NVE Corporation Magnetoresistive struktur mit einer legierungsschicht
US5309305A (en) * 1992-11-16 1994-05-03 Read-Rite Corporation Dual element magnetoresistive sensing head
US5569544A (en) * 1992-11-16 1996-10-29 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components
US5617071A (en) * 1992-11-16 1997-04-01 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses
FR2698965B1 (fr) * 1992-12-03 1995-01-06 Commissariat Energie Atomique Structure et capteur magnétiques multicouches à forte magnétorésistance et procédé de fabrication de la structure.
US5432373A (en) * 1992-12-15 1995-07-11 Bell Communications Research, Inc. Magnetic spin transistor
DE4301704A1 (de) * 1993-01-22 1994-07-28 Siemens Ag Vorrichtung zum Erfassen einer Winkelposition eines Objektes
US5343422A (en) * 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
US5576915A (en) * 1993-03-15 1996-11-19 Kabushiki Kaisha Toshiba Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof
US5493465A (en) * 1993-03-15 1996-02-20 Kabushiki Kaisha Toshiba Magnetoresistance effect element and magnetic recording apparatus
FR2702919B1 (fr) * 1993-03-19 1995-05-12 Thomson Csf Transducteur magnétorésistif et procédé de réalisation.
US5736921A (en) * 1994-03-23 1998-04-07 Sanyo Electric Co., Ltd. Magnetoresistive element
US5585198A (en) * 1993-10-20 1996-12-17 Sanyo Electric Co., Ltd. Magnetorsistance effect element
JP2551321B2 (ja) * 1993-04-21 1996-11-06 日本電気株式会社 集積化磁気抵抗効果センサ
US5949707A (en) * 1996-09-06 1999-09-07 Nonvolatile Electronics, Incorporated Giant magnetoresistive effect memory cell
JPH0766033A (ja) * 1993-08-30 1995-03-10 Mitsubishi Electric Corp 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ
US5585199A (en) * 1993-09-09 1996-12-17 Kabushiki Kaisha Toshiba Magnetoresistance effect head
TW279977B (de) 1993-09-24 1996-07-01 Philips Electronics Nv
FR2710753B1 (fr) * 1993-09-27 1995-10-27 Commissariat Energie Atomique Capteur de courant comprenant un ruban magnétorésistif et son procédé de réalisation.
US5475304A (en) * 1993-10-01 1995-12-12 The United States Of America As Represented By The Secretary Of The Navy Magnetoresistive linear displacement sensor, angular displacement sensor, and variable resistor using a moving domain wall
SG55066A1 (en) 1993-10-06 1999-06-22 Koninkl Philips Electronics Nv Magneto-resistance device and magnetic head employing such a device
US5465185A (en) * 1993-10-15 1995-11-07 International Business Machines Corporation Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor
US5408377A (en) * 1993-10-15 1995-04-18 International Business Machines Corporation Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor
FR2712420B1 (fr) * 1993-11-08 1995-12-15 Commissariat Energie Atomique Tête magnétique de lecture à élément magnétorésistant multicouche et à concentrateur et son procédé de réalisation.
US5313375A (en) * 1993-11-10 1994-05-17 Guth Lighting Inc. Flow-thru troffer
US5452163A (en) * 1993-12-23 1995-09-19 International Business Machines Corporation Multilayer magnetoresistive sensor
EP0676746B1 (de) * 1994-03-09 1999-08-04 Eastman Kodak Company Magnetoresistiver Wiedergabekopf mit doppeltem Spin-Ventilelement
JPH08511378A (ja) * 1994-03-25 1996-11-26 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 磁気抵抗装置及びこのような装置を具える磁気ヘッド
US5442508A (en) * 1994-05-25 1995-08-15 Eastman Kodak Company Giant magnetoresistive reproduce head having dual magnetoresistive sensor
US5583725A (en) * 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
US5874886A (en) * 1994-07-06 1999-02-23 Tdk Corporation Magnetoresistance effect element and magnetoresistance device
DE4427495C2 (de) * 1994-08-03 2000-04-13 Siemens Ag Sensoreinrichtung mit einem GMR-Sensorelement
JPH0849062A (ja) * 1994-08-04 1996-02-20 Sanyo Electric Co Ltd 磁気抵抗効果膜
US6001430A (en) * 1994-09-08 1999-12-14 Nec Corporation Magnetoresistance effect film and production process thereof
US5898546A (en) * 1994-09-08 1999-04-27 Fujitsu Limited Magnetoresistive head and magnetic recording apparatus
JP2738312B2 (ja) * 1994-09-08 1998-04-08 日本電気株式会社 磁気抵抗効果膜およびその製造方法
JPH08130337A (ja) * 1994-09-09 1996-05-21 Sanyo Electric Co Ltd 磁気抵抗素子及びその製造方法
DE69513630T2 (de) * 1994-10-05 2000-06-21 Koninkl Philips Electronics Nv Magnetische mehrlagenanordnung, die eine doppelbarrierenstruktur mit resonantem tunneleffekt enthält
US6510031B1 (en) 1995-03-31 2003-01-21 International Business Machines Corporation Magnetoresistive sensor with magnetostatic coupling to obtain opposite alignment of magnetic regions
US5585986A (en) * 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect
US5583727A (en) * 1995-05-15 1996-12-10 International Business Machines Corporation Multiple data layer magnetic recording data storage system with digital magnetoresistive read sensor
US5648885A (en) * 1995-08-31 1997-07-15 Hitachi, Ltd. Giant magnetoresistive effect sensor, particularly having a multilayered magnetic thin film layer
US5835003A (en) * 1995-09-29 1998-11-10 Hewlett-Packard Company Colossal magnetoresistance sensor
US5966322A (en) * 1996-09-06 1999-10-12 Nonvolatile Electronics, Incorporated Giant magnetoresistive effect memory cell
US5945904A (en) * 1996-09-06 1999-08-31 Ford Motor Company Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers
US5805392A (en) * 1996-12-30 1998-09-08 Quantum Corporation Laminated plated pole pieces for thin film magnetic transducers
US6239595B1 (en) 1998-05-13 2001-05-29 Mitsubishi Denki Kabushiki Kaisha Magnetic field sensing element
JP3544141B2 (ja) 1998-05-13 2004-07-21 三菱電機株式会社 磁気検出素子および磁気検出装置
US6249394B1 (en) * 1999-02-12 2001-06-19 International Business Machines Corporation Method and apparatus for providing amplitude instability data recovery for AMR/GMR heads
US6583971B1 (en) * 1999-03-09 2003-06-24 Sae Magnetics (Hk) Ltd. Elimination of electric-pop noise in MR/GMR device
JP3562993B2 (ja) 1999-04-13 2004-09-08 三菱電機株式会社 磁気検出装置
DE19949714A1 (de) * 1999-10-15 2001-04-26 Bosch Gmbh Robert Magnetisch sensitives Bauteil, insbesondere Sensorelement, mit magnetoresistiven Schichtsystemen in Brückenschaltung
US6639763B1 (en) * 2000-03-15 2003-10-28 Tdk Corporation Magnetic transducer and thin film magnetic head
US6714389B1 (en) 2000-11-01 2004-03-30 Seagate Technology Llc Digital magnetoresistive sensor with bias
FR2817077B1 (fr) 2000-11-17 2003-03-07 Thomson Csf Capacite variable commandable en tension par utilisation du phenomene de "blocage de coulomb"
DE10110292C1 (de) * 2001-02-26 2002-10-02 Dresden Ev Inst Festkoerper Stromabhängiges resistives Bauelement
CN100504425C (zh) 2002-07-26 2009-06-24 罗伯特-博希股份公司 磁阻层系统和具有这种层系统的传感器元件
US6777929B2 (en) * 2002-08-27 2004-08-17 International Business Machines Corporation Cross talk bit error rate testing of a magnetic head
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US7045838B2 (en) * 2003-10-31 2006-05-16 International Business Machines Corporation Techniques for coupling in semiconductor devices and magnetic device using these techniques
US7221545B2 (en) * 2004-02-18 2007-05-22 Hitachi Global Storage Technologies Netherlands B.V. High HC reference layer structure for self-pinned GMR heads
US7190560B2 (en) 2004-02-18 2007-03-13 Hitachi Global Storage Technologies Netherlands B.V. Self-pinned CPP sensor using Fe/Cr/Fe structure
US7352541B2 (en) * 2004-04-30 2008-04-01 Hitachi Global Storage Technologies Netherlands B.V. CPP GMR using Fe based synthetic free layer
US7268982B2 (en) * 2004-10-21 2007-09-11 Hitachi Global Storage Technologies Netherlands B.V. Current perpendicular to plane (CPP) GMR structure having vanadium doped, AP coupled, multi-layered pinned structure
FR2880131B1 (fr) * 2004-12-23 2007-03-16 Thales Sa Procede de mesure d'un champ magnetique faible et capteur de champ magnetique a sensibilite amelioree

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US4616281A (en) * 1982-03-10 1986-10-07 Copal Company Limited Displacement detecting apparatus comprising magnetoresistive elements
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US4879619A (en) * 1988-03-28 1989-11-07 International Business Machines Corporation Magnetoresistive read transducer

Also Published As

Publication number Publication date
JP3058338B2 (ja) 2000-07-04
FR2648942A1 (fr) 1990-12-28
JPH0352111A (ja) 1991-03-06
US5134533A (en) 1992-07-28
EP0406060A1 (de) 1991-01-02
EP0406060B1 (de) 1995-05-10
DE69019242T2 (de) 1995-09-21
FR2648942B1 (fr) 1995-08-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee