DE69012395D1 - DRAM mit gegen Diaphonie abgeschirmten Bitleitungen. - Google Patents

DRAM mit gegen Diaphonie abgeschirmten Bitleitungen.

Info

Publication number
DE69012395D1
DE69012395D1 DE69012395T DE69012395T DE69012395D1 DE 69012395 D1 DE69012395 D1 DE 69012395D1 DE 69012395 T DE69012395 T DE 69012395T DE 69012395 T DE69012395 T DE 69012395T DE 69012395 D1 DE69012395 D1 DE 69012395D1
Authority
DE
Germany
Prior art keywords
diaphony
dram
bit lines
shielded against
lines shielded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69012395T
Other languages
English (en)
Other versions
DE69012395T2 (de
Inventor
John Atkinson Fifield
Howard Leo Kalter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69012395D1 publication Critical patent/DE69012395D1/de
Publication of DE69012395T2 publication Critical patent/DE69012395T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
DE69012395T 1989-04-20 1990-03-13 DRAM mit gegen Diaphonie abgeschirmten Bitleitungen. Expired - Fee Related DE69012395T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/340,962 US5010524A (en) 1989-04-20 1989-04-20 Crosstalk-shielded-bit-line dram

Publications (2)

Publication Number Publication Date
DE69012395D1 true DE69012395D1 (de) 1994-10-20
DE69012395T2 DE69012395T2 (de) 1995-03-30

Family

ID=23335676

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69012395T Expired - Fee Related DE69012395T2 (de) 1989-04-20 1990-03-13 DRAM mit gegen Diaphonie abgeschirmten Bitleitungen.

Country Status (4)

Country Link
US (1) US5010524A (de)
EP (1) EP0393347B1 (de)
JP (1) JPH02294990A (de)
DE (1) DE69012395T2 (de)

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JP2719237B2 (ja) * 1990-12-20 1998-02-25 シャープ株式会社 ダイナミック型半導体記憶装置
US5760452A (en) * 1991-08-22 1998-06-02 Nec Corporation Semiconductor memory and method of fabricating the same
JP3212884B2 (ja) * 1996-08-29 2001-09-25 日本電気株式会社 半導体記憶装置
US6333866B1 (en) * 1998-09-28 2001-12-25 Texas Instruments Incorporated Semiconductor device array having dense memory cell array and heirarchical bit line scheme
DE19852570A1 (de) * 1998-11-13 2000-05-25 Siemens Ag Ferroelektrische Speicheranordnung
US6115310A (en) * 1999-01-05 2000-09-05 International Business Machines Corporation Wordline activation delay monitor using sample wordline located in data-storing array
US6185135B1 (en) 1999-01-05 2001-02-06 International Business Machines Corporation Robust wordline activation delay monitor using a plurality of sample wordlines
US6204683B1 (en) 1999-05-18 2001-03-20 Intel Corporation Apparatus and method for reducing crosstalk in an integrated circuit which includes a signal bus
JP2001084785A (ja) * 1999-09-17 2001-03-30 Nec Corp センスアンプ回路及び半導体記憶装置
US6504246B2 (en) * 1999-10-12 2003-01-07 Motorola, Inc. Integrated circuit having a balanced twist for differential signal lines
US7259464B1 (en) 2000-05-09 2007-08-21 Micron Technology, Inc. Vertical twist scheme for high-density DRAMs
US6304479B1 (en) * 2000-06-23 2001-10-16 Infineon Technologies North America Corp. Shielded bit line architecture for memory arrays
US6272054B1 (en) 2000-10-31 2001-08-07 International Business Machines Corporation Twin-cell memory architecture with shielded bitlines for embedded memory applications
US6418044B1 (en) * 2000-12-28 2002-07-09 Stmicroelectronics, Inc. Method and circuit for determining sense amplifier sensitivity
US6552944B2 (en) 2001-05-31 2003-04-22 International Business Machines Corporation Single bitline direct sensing architecture for high speed memory device
JP2002373491A (ja) * 2001-06-15 2002-12-26 Fujitsu Ltd 半導体記憶装置
US6894231B2 (en) * 2002-03-19 2005-05-17 Broadcom Corporation Bus twisting scheme for distributed coupling and low power
US6738300B2 (en) * 2002-08-26 2004-05-18 International Business Machines Corporation Direct read of DRAM cell using high transfer ratio
US6717839B1 (en) 2003-03-31 2004-04-06 Ramtron International Corporation Bit-line shielding method for ferroelectric memories
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
JP4781783B2 (ja) 2005-10-31 2011-09-28 エルピーダメモリ株式会社 半導体記憶装置
EP2005434A1 (de) * 2006-03-30 2008-12-24 Nxp B.V. Elektronische schaltung mit speichermatrix und leseverfahren für bitleitungsrauschkompensation
US7492632B2 (en) * 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
WO2007128738A1 (en) * 2006-05-02 2007-11-15 Innovative Silicon Sa Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) * 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
KR101277402B1 (ko) 2007-01-26 2013-06-20 마이크론 테크놀로지, 인코포레이티드 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 ｄｒａｍ 트랜지스터
WO2009031052A2 (en) * 2007-03-29 2009-03-12 Innovative Silicon S.A. Zero-capacitor (floating body) random access memory circuits with polycide word lines and manufacturing methods therefor
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8194487B2 (en) 2007-09-17 2012-06-05 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) * 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) * 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) * 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) * 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) * 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) * 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) * 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US8710566B2 (en) 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
CN102365628B (zh) * 2009-03-31 2015-05-20 美光科技公司 用于提供半导体存储器装置的技术
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) * 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8310893B2 (en) * 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en) * 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8576631B2 (en) * 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8411513B2 (en) * 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8369177B2 (en) * 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
US8547738B2 (en) 2010-03-15 2013-10-01 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8189410B1 (en) 2010-04-27 2012-05-29 Bruce Lee Morton Memory device and method thereof
US9099169B1 (en) 2010-04-27 2015-08-04 Tagmatech, Llc Memory device and method thereof
US8339873B1 (en) 2010-04-27 2012-12-25 Bruce Lee Morton Memory device and method thereof
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
US10255968B2 (en) * 2017-07-24 2019-04-09 Omnivision Technologies, Inc. DRAM core architecture with wide I/Os

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US32682A (en) * 1861-07-02 Improvement in steam-boilers
US4160275A (en) * 1978-04-03 1979-07-03 International Business Machines Corporation Accessing arrangement for memories with small cells
DE2919166C2 (de) * 1978-05-12 1986-01-02 Nippon Electric Co., Ltd., Tokio/Tokyo Speichervorrichtung
JPS5817998B2 (ja) * 1978-10-26 1983-04-11 富士通株式会社 半導体メモリ
JPS5942399B2 (ja) * 1979-12-21 1984-10-15 株式会社日立製作所 メモリ装置
JPH0785354B2 (ja) * 1985-05-08 1995-09-13 日本電気株式会社 半導体メモリ
US4704705A (en) * 1985-07-19 1987-11-03 Texas Instruments Incorporated Two transistor DRAM cell and array
JPS6271094A (ja) * 1985-09-24 1987-04-01 Nec Corp 半導体メモリ

Also Published As

Publication number Publication date
EP0393347A2 (de) 1990-10-24
DE69012395T2 (de) 1995-03-30
EP0393347A3 (de) 1991-03-27
EP0393347B1 (de) 1994-09-14
JPH02294990A (ja) 1990-12-05
US5010524A (en) 1991-04-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee