DE68913126D1 - Quasi-gefaltete Bitleitung. - Google Patents
Quasi-gefaltete Bitleitung.Info
- Publication number
- DE68913126D1 DE68913126D1 DE89310291T DE68913126T DE68913126D1 DE 68913126 D1 DE68913126 D1 DE 68913126D1 DE 89310291 T DE89310291 T DE 89310291T DE 68913126 T DE68913126 T DE 68913126T DE 68913126 D1 DE68913126 D1 DE 68913126D1
- Authority
- DE
- Germany
- Prior art keywords
- quasi
- bit line
- folded bit
- folded
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Tires In General (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25667088A | 1988-10-12 | 1988-10-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68913126D1 true DE68913126D1 (de) | 1994-03-24 |
DE68913126T2 DE68913126T2 (de) | 1994-05-26 |
Family
ID=22973118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68913126T Expired - Fee Related DE68913126T2 (de) | 1988-10-12 | 1989-10-09 | Quasi-gefaltete Bitleitung. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0364186B1 (de) |
JP (1) | JPH02223090A (de) |
KR (1) | KR0146290B1 (de) |
DE (1) | DE68913126T2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6388314B1 (en) | 1995-08-17 | 2002-05-14 | Micron Technology, Inc. | Single deposition layer metal dynamic random access memory |
US5903491A (en) | 1997-06-09 | 1999-05-11 | Micron Technology, Inc. | Single deposition layer metal dynamic random access memory |
KR20020095345A (ko) * | 2001-06-14 | 2002-12-26 | 엘지전자 주식회사 | 무선모뎀칩의 외부 어드레스 라인 확장 회로 |
-
1989
- 1989-10-09 DE DE68913126T patent/DE68913126T2/de not_active Expired - Fee Related
- 1989-10-09 EP EP89310291A patent/EP0364186B1/de not_active Expired - Lifetime
- 1989-10-11 KR KR1019890014548A patent/KR0146290B1/ko not_active IP Right Cessation
- 1989-10-11 JP JP1264827A patent/JPH02223090A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR0146290B1 (ko) | 1998-11-02 |
KR900006974A (ko) | 1990-05-09 |
EP0364186B1 (de) | 1994-02-16 |
JPH02223090A (ja) | 1990-09-05 |
DE68913126T2 (de) | 1994-05-26 |
EP0364186A3 (de) | 1991-01-16 |
EP0364186A2 (de) | 1990-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |