DE69010971D1 - Heizspule für Einkristallzüchtung. - Google Patents

Heizspule für Einkristallzüchtung.

Info

Publication number
DE69010971D1
DE69010971D1 DE69010971T DE69010971T DE69010971D1 DE 69010971 D1 DE69010971 D1 DE 69010971D1 DE 69010971 T DE69010971 T DE 69010971T DE 69010971 T DE69010971 T DE 69010971T DE 69010971 D1 DE69010971 D1 DE 69010971D1
Authority
DE
Germany
Prior art keywords
single crystal
heating coil
crystal growing
growing
coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69010971T
Other languages
English (en)
Other versions
DE69010971T2 (de
Inventor
Masataka Watanabe
Katsumi Ichimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69010971D1 publication Critical patent/DE69010971D1/de
Publication of DE69010971T2 publication Critical patent/DE69010971T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69010971T 1989-04-26 1990-04-24 Heizspule für Einkristallzüchtung. Expired - Fee Related DE69010971T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1107980A JPH0699218B2 (ja) 1989-04-26 1989-04-26 単結晶育成用コイル

Publications (2)

Publication Number Publication Date
DE69010971D1 true DE69010971D1 (de) 1994-09-01
DE69010971T2 DE69010971T2 (de) 1994-11-17

Family

ID=14472934

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69010971T Expired - Fee Related DE69010971T2 (de) 1989-04-26 1990-04-24 Heizspule für Einkristallzüchtung.

Country Status (4)

Country Link
US (1) US5051242A (de)
EP (1) EP0396299B1 (de)
JP (1) JPH0699218B2 (de)
DE (1) DE69010971T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7255468B2 (ja) * 2019-12-06 2023-04-11 株式会社Sumco 誘導加熱コイル及びこれを用いた単結晶製造装置
CN112359411A (zh) * 2020-12-09 2021-02-12 中国电子科技集团公司第四十六研究所 用于区熔法制备单晶硅的加热线圈

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548227A (de) * 1955-07-22
US4072556A (en) * 1969-11-29 1978-02-07 Siemens Aktiengesellschaft Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same
USRE29825E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
DE2812216A1 (de) * 1978-03-20 1979-10-11 Siemens Ag Verfahren zum besseren aufschmelzen des vorratsstabes beim tiegelfreien zonenschmelzen
DE3007377A1 (de) * 1980-02-27 1981-09-03 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum tiegelfreien zonenschmelzen eines siliciumstabes
JPS6448391A (en) * 1987-04-27 1989-02-22 Shinetsu Handotai Kk Single winding induction heating coil used in floating zone melting method
DE3873173T2 (de) * 1987-05-25 1993-03-04 Shinetsu Handotai Kk Vorrichtung fuer hf-induktionsheizung.
JPH01131094A (ja) * 1987-11-18 1989-05-23 Shin Etsu Handotai Co Ltd Ｆｚ用高周波誘導加熱コイル及び該コイルを用いた半導体単結晶製造方法
DE3805118A1 (de) * 1988-02-18 1989-08-24 Wacker Chemitronic Verfahren zum tiegelfreien zonenziehen von halbleiterstaeben und induktionsheizspule zu seiner durchfuehrung

Also Published As

Publication number Publication date
EP0396299B1 (de) 1994-07-27
DE69010971T2 (de) 1994-11-17
EP0396299A1 (de) 1990-11-07
US5051242A (en) 1991-09-24
JPH02283692A (ja) 1990-11-21
JPH0699218B2 (ja) 1994-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BARZ, P., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 80803 MUENCHEN

8339 Ceased/non-payment of the annual fee