DE69008162D1 - Hochzähes monolithisches siliziumnitrid. - Google Patents

Hochzähes monolithisches siliziumnitrid.

Info

Publication number
DE69008162D1
DE69008162D1 DE69008162T DE69008162T DE69008162D1 DE 69008162 D1 DE69008162 D1 DE 69008162D1 DE 69008162 T DE69008162 T DE 69008162T DE 69008162 T DE69008162 T DE 69008162T DE 69008162 D1 DE69008162 D1 DE 69008162D1
Authority
DE
Germany
Prior art keywords
silicon nitride
monolithic silicon
strength monolithic
strength
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69008162T
Other languages
English (en)
Other versions
DE69008162T2 (de
Inventor
Chien-Wei Li
Jean Yamanis
Gilbert Carrasquillo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
AlliedSignal Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AlliedSignal Inc filed Critical AlliedSignal Inc
Application granted granted Critical
Publication of DE69008162D1 publication Critical patent/DE69008162D1/de
Publication of DE69008162T2 publication Critical patent/DE69008162T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C04B35/593—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering
    • C04B35/5935—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering obtained by gas pressure sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
DE69008162T 1989-01-17 1990-01-03 Hochzähes monolithisches siliziumnitrid. Expired - Lifetime DE69008162T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US29753089A 1989-01-17 1989-01-17
US45089989A 1989-12-14 1989-12-14
PCT/US1990/000058 WO1990008113A1 (en) 1989-01-17 1990-01-03 Super tough monolithic silicon nitride

Publications (2)

Publication Number Publication Date
DE69008162D1 true DE69008162D1 (de) 1994-05-19
DE69008162T2 DE69008162T2 (de) 1994-08-04

Family

ID=26970201

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69008162T Expired - Lifetime DE69008162T2 (de) 1989-01-17 1990-01-03 Hochzähes monolithisches siliziumnitrid.

Country Status (5)

Country Link
EP (1) EP0454780B1 (de)
JP (1) JP2773976B2 (de)
CA (1) CA2045563A1 (de)
DE (1) DE69008162T2 (de)
WO (1) WO1990008113A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH089506B2 (ja) * 1990-01-23 1996-01-31 日本碍子株式会社 窒化珪素体
JPH06508339A (ja) * 1991-06-17 1994-09-22 アライド−シグナル・インコーポレーテッド 高靱性−高強度焼結窒化ケイ素
JP2725761B2 (ja) * 1993-12-27 1998-03-11 本田技研工業株式会社 窒化珪素セラミックス材料及びその製造方法
DE19957067B4 (de) * 1999-11-26 2004-02-12 Technische Universität Dresden Verfahren und Anordnung zur Überwachung der stromlosen Metallabscheidung
US8252126B2 (en) * 2004-05-06 2012-08-28 Global Advanced Metals, Usa, Inc. Sputter targets and methods of forming same by rotary axial forging

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895659A (ja) * 1981-11-30 1983-06-07 日本特殊陶業株式会社 高耐食性窒化珪素焼結体およびその製造方法
JPS59213676A (ja) * 1983-05-19 1984-12-03 東芝タンガロイ株式会社 高強度窒化硅素焼結体及びその製造方法
EP0123292B1 (de) * 1983-04-22 1990-11-14 Toshiba Tungaloy Co. Ltd. Gesinterter Siliziumnitridformkörper und Verfahren zu seiner Herstellung
JPS59199577A (ja) * 1983-04-22 1984-11-12 東芝タンガロイ株式会社 耐熱性窒化硅素焼結体及びその製造方法
JPS61201663A (ja) * 1985-02-28 1986-09-06 工業技術院長 繊維組織窒化ケイ素系焼結体の製造方法
DE3617282A1 (de) * 1986-05-23 1987-11-26 Kempten Elektroschmelz Gmbh Polykristalline sinterkoerper auf basis von siliciumnitrid mit hoher bruchzaehigkeit und haerte
JP2563392B2 (ja) * 1986-11-21 1996-12-11 株式会社東芝 窒化ケイ素系セラミックスおよびその製造方法

Also Published As

Publication number Publication date
DE69008162T2 (de) 1994-08-04
CA2045563A1 (en) 1990-07-18
JP2773976B2 (ja) 1998-07-09
EP0454780B1 (de) 1994-04-13
JPH03504959A (ja) 1991-10-31
EP0454780A1 (de) 1991-11-06
WO1990008113A1 (en) 1990-07-26

Similar Documents

Publication Publication Date Title
NO895104L (no) Monolittisk yttersaale.
DE68908324D1 (de) Granitaehnlicher kunststein.
DE59007688D1 (de) Piezoelektrischer Wandler.
DE3787141D1 (de) Nifedipinkombinationspräparat.
DE68917269D1 (de) Monolithischer Ablaster.
DE68904700D1 (de) Polykristallines silizium.
DE3777986D1 (de) Lipoxygenase-inhibitor verbindungen.
IT8919984A0 (it) Dispositivo di fissaggio.
ES1013768Y (es) Aireador.
DE3881113D1 (de) Aluminiumoxid-zirkonoxid-keramik.
DE68911774D1 (de) Keramik-Halbleiter.
FI904258A0 (fi) Mitomycin c stabila loesningar.
DE3679646D1 (de) Siliziumnitridsinterformkoerper.
DE68910363D1 (de) Siliciumnitrid-Sinterkörper.
DE3763067D1 (de) Gesinterte siliciumnitridkoerper.
DE68922117D1 (de) Halbleiterphotodiode.
DE69013631D1 (de) Einkristallsilizium.
DE3767337D1 (de) Gesinterte siliziumnitridformkoerper.
DE3787137D1 (de) Halbleiteranordnung.
DE3787848D1 (de) Halbleiterdiode.
DE69008162D1 (de) Hochzähes monolithisches siliziumnitrid.
DE3763981D1 (de) Hohlleiterschalter.
DE68910231D1 (de) Siliciumnitrid-Sinterkörper.
DE68910327D1 (de) Halbleiteranordnung.
IT8821470A0 (it) Dispositivo di bloccaggio.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition