DE68928357D1 - Festkörper-Bildaufnehmer mit gemeinsamer Ausgangsleitung für Spannungen aus photoelektrischer Umwandlung - Google Patents

Festkörper-Bildaufnehmer mit gemeinsamer Ausgangsleitung für Spannungen aus photoelektrischer Umwandlung

Info

Publication number
DE68928357D1
DE68928357D1 DE68928357T DE68928357T DE68928357D1 DE 68928357 D1 DE68928357 D1 DE 68928357D1 DE 68928357 T DE68928357 T DE 68928357T DE 68928357 T DE68928357 T DE 68928357T DE 68928357 D1 DE68928357 D1 DE 68928357D1
Authority
DE
Germany
Prior art keywords
voltages
solid
image sensor
photoelectric conversion
output line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928357T
Other languages
English (en)
Other versions
DE68928357T2 (de
Inventor
Hiroshige Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68928357D1 publication Critical patent/DE68928357D1/de
Publication of DE68928357T2 publication Critical patent/DE68928357T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
DE68928357T 1988-07-26 1989-07-26 Festkörper-Bildaufnehmer mit gemeinsamer Ausgangsleitung für Spannungen aus photoelektrischer Umwandlung Expired - Fee Related DE68928357T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18636688 1988-07-26
JP63279105A JPH0795829B2 (ja) 1988-07-26 1988-11-04 固体撮像装置

Publications (2)

Publication Number Publication Date
DE68928357D1 true DE68928357D1 (de) 1997-11-06
DE68928357T2 DE68928357T2 (de) 1998-02-19

Family

ID=26503717

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928357T Expired - Fee Related DE68928357T2 (de) 1988-07-26 1989-07-26 Festkörper-Bildaufnehmer mit gemeinsamer Ausgangsleitung für Spannungen aus photoelektrischer Umwandlung

Country Status (4)

Country Link
US (1) US5012344A (de)
EP (1) EP0352767B1 (de)
JP (1) JPH0795829B2 (de)
DE (1) DE68928357T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3097121B2 (ja) * 1990-09-27 2000-10-10 ソニー株式会社 電荷／電圧変換効率の測定方法
JPH04199968A (ja) * 1990-11-29 1992-07-21 Toshiba Corp 固体撮像装置
CA2060556A1 (en) * 1992-02-03 1993-08-04 Savvas G. Chamberlain Dual mode on-chip high frequency output structure with pixel video differencing for ccd image sensors
US5450549A (en) * 1992-04-09 1995-09-12 International Business Machines Corporation Multi-channel image array buffer and switching network
US5461425A (en) * 1994-02-15 1995-10-24 Stanford University CMOS image sensor with pixel level A/D conversion
US6035013A (en) * 1994-06-01 2000-03-07 Simage O.Y. Radiographic imaging devices, systems and methods
GB2289983B (en) * 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
JPH08149376A (ja) * 1994-11-18 1996-06-07 Olympus Optical Co Ltd 固体撮像装置
JPH1098176A (ja) 1996-09-19 1998-04-14 Toshiba Corp 固体撮像装置
US6657665B1 (en) * 1998-12-31 2003-12-02 Eastman Kodak Company Active Pixel Sensor with wired floating diffusions and shared amplifier
US6975355B1 (en) 2000-02-22 2005-12-13 Pixim, Inc. Multiple sampling via a time-indexed method to achieve wide dynamic ranges
US7095439B2 (en) 2002-04-04 2006-08-22 Motorola, Inc. Image sensor circuit and method
JP2004228873A (ja) * 2003-01-22 2004-08-12 Seiko Epson Corp 画像処理装置、画像処理方法及び固体撮像装置
JP3951994B2 (ja) 2003-09-16 2007-08-01 ソニー株式会社 固体撮像装置およびカメラシステム
JP2004349715A (ja) * 2004-06-21 2004-12-09 Sony Corp イメージセンサ

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5521472B2 (de) * 1971-08-11 1980-06-10
JPS5528456B2 (de) * 1972-11-08 1980-07-28
JPS50134393A (de) * 1974-04-10 1975-10-24
US4023048A (en) * 1975-12-15 1977-05-10 International Business Machines Corporation Self-scanning photo-sensitive circuits
JPS5343416A (en) * 1976-10-01 1978-04-19 Hitachi Ltd Image sensor
JPS59140766A (ja) * 1983-02-01 1984-08-13 Fuji Xerox Co Ltd 原稿読取装置
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
US4763007A (en) * 1984-12-25 1988-08-09 Ricoh Company, Ltd. Image sensor driving circuit
US4914519A (en) * 1986-09-19 1990-04-03 Canon Kabushiki Kaisha Apparatus for eliminating noise in a solid-state image pickup device
US4737854A (en) * 1986-07-18 1988-04-12 Xerox Corporation Image sensor array with two stage transfer
US4858022A (en) * 1986-09-05 1989-08-15 Kabushiki Kaisha Toshiba Contact-type linear image sensor
JPS6364469A (ja) * 1986-09-05 1988-03-22 Toshiba Corp イメ−ジセンサ
JPH084129B2 (ja) * 1986-11-19 1996-01-17 キヤノン株式会社 光電変換装置

Also Published As

Publication number Publication date
DE68928357T2 (de) 1998-02-19
EP0352767A2 (de) 1990-01-31
US5012344A (en) 1991-04-30
EP0352767B1 (de) 1997-10-01
JPH0795829B2 (ja) 1995-10-11
EP0352767A3 (de) 1992-05-20
JPH02131681A (ja) 1990-05-21

Similar Documents

Publication Publication Date Title
DE68928357D1 (de) Festkörper-Bildaufnehmer mit gemeinsamer Ausgangsleitung für Spannungen aus photoelektrischer Umwandlung
DE3587376T2 (de) Hochauflösende Bildsensormatrix mit amorphen Photodioden.
DE69631356D1 (de) Halbleiter-Bildaufnehmer mit gemeinsamer Ausgangsleistung
DE69130399D1 (de) Festkörperbildaufnahmeelement mit Mikrolinsen
DE69233055D1 (de) Linearer CCD-Bildsensor
DE68925402D1 (de) Voll differentieller CMOS-Komparator mit hoher Auflösung
DE3585516D1 (de) Bildsensoranordnung.
DE69125587D1 (de) Bildumwandlung
DE68906839T2 (de) Photoelektrischer Fühler.
DE69120112D1 (de) Photoelektrisches Konverter-Modul
DE69124436T2 (de) Bildaufnahmesystem mit optischer Bildformumwandlung
DE3854832D1 (de) Halbleiterbildsensor mit mehrfachen horizontalen Transferabschnitten
FR2541059B1 (fr) Convertisseur numerique-analogique cmos a mode de tension ayant une place de reference etendue
DE69209374T2 (de) Festkörper-Bildsensor
DE69403943D1 (de) Steckeranordnung für photoelektrischen Sensor
DE3889603D1 (de) Photoelektrisches Umwandlungsgerät.
DE69215433D1 (de) Kabel verbindende Struktur für einen Festkörper-Bildsensor
DE3850157T2 (de) Photoelektrische Umwandlungsanordnung.
DE3772737D1 (de) Ccd-bildsensorsvorrichtung.
DE3789988T2 (de) Festkörpersbildsensor.
DE3579277D1 (de) Cmos-ausgangspuffer.
DE3788516D1 (de) Ausgangskreis für abbildungssensor.
DE69231261D1 (de) Festkörperbildsensor
DE3886743D1 (de) Bilddetektor und entsprechendes photoelektrisches Umwandlungselement.
NL193514B (nl) Beeldsensoren met ladingsgekoppelde inrichtingen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee