DE3886743D1 - Bilddetektor und entsprechendes photoelektrisches Umwandlungselement. - Google Patents

Bilddetektor und entsprechendes photoelektrisches Umwandlungselement.

Info

Publication number
DE3886743D1
DE3886743D1 DE88307378T DE3886743T DE3886743D1 DE 3886743 D1 DE3886743 D1 DE 3886743D1 DE 88307378 T DE88307378 T DE 88307378T DE 3886743 T DE3886743 T DE 3886743T DE 3886743 D1 DE3886743 D1 DE 3886743D1
Authority
DE
Germany
Prior art keywords
photoelectric conversion
conversion element
image detector
corresponding photoelectric
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE88307378T
Other languages
English (en)
Other versions
DE3886743T2 (de
Inventor
Satoshi Machida
Hiroshi Mukainakano
Yukito Kawahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of DE3886743D1 publication Critical patent/DE3886743D1/de
Application granted granted Critical
Publication of DE3886743T2 publication Critical patent/DE3886743T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14825—Linear CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
DE88307378T 1988-08-10 1988-08-10 Bilddetektor und entsprechendes photoelektrisches Umwandlungselement. Expired - Lifetime DE3886743T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88307378A EP0354280B1 (de) 1988-08-10 1988-08-10 Bilddetektor und entsprechendes photoelektrisches Umwandlungselement

Publications (2)

Publication Number Publication Date
DE3886743D1 true DE3886743D1 (de) 1994-02-10
DE3886743T2 DE3886743T2 (de) 1994-04-28

Family

ID=8200170

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88307378T Expired - Lifetime DE3886743T2 (de) 1988-08-10 1988-08-10 Bilddetektor und entsprechendes photoelektrisches Umwandlungselement.

Country Status (3)

Country Link
US (1) US4901153A (de)
EP (1) EP0354280B1 (de)
DE (1) DE3886743T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04111478A (ja) * 1990-08-31 1992-04-13 Sumitomo Electric Ind Ltd 受光素子
JPH04111477A (ja) * 1990-08-31 1992-04-13 Sumitomo Electric Ind Ltd 受光素子
US5329149A (en) * 1990-10-12 1994-07-12 Seiko Instruments Inc. Image sensor with non-light-transmissive layer having photosensing windows
JP3200856B2 (ja) * 1991-02-12 2001-08-20 ソニー株式会社 固体撮像装置
JPH0521768A (ja) * 1991-07-15 1993-01-29 Sharp Corp 固体撮像素子
DE19812008A1 (de) * 1998-03-19 1999-09-23 Heidenhain Gmbh Dr Johannes Optoelektronische Bauelementanordnung
KR20040060509A (ko) * 2002-12-30 2004-07-06 동부전자 주식회사 Ｃｍｏｓ 이미지 센서
TWM260879U (en) * 2004-08-24 2005-04-01 Chipmos Technologies Inc Bump structure of opto-electronic chip

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5171792A (de) * 1974-12-19 1976-06-21 Minolta Camera Kk
JPH0614552B2 (ja) * 1983-02-02 1994-02-23 富士ゼロックス株式会社 光電変換素子の製造方法
JPS6043857A (ja) * 1983-08-20 1985-03-08 Mitsubishi Electric Corp 固体撮像装置とその製造方法
JPS60161664A (ja) * 1984-02-01 1985-08-23 Sharp Corp 密着型二次元画像読取装置
JPS61193479A (ja) * 1985-02-22 1986-08-27 Fuji Photo Film Co Ltd 固体カラ−撮像デバイス
DE3626504C2 (de) * 1985-08-07 1996-06-27 Sharp Kk Verfahren zur Herstellung eines linearen Bildsensors

Also Published As

Publication number Publication date
US4901153A (en) 1990-02-13
EP0354280A1 (de) 1990-02-14
EP0354280B1 (de) 1993-12-29
DE3886743T2 (de) 1994-04-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition