DE68922795D1 - Verfahren zum Messen des spezifischen Kontaktwiderstandes in integrierten Schaltungen. - Google Patents

Verfahren zum Messen des spezifischen Kontaktwiderstandes in integrierten Schaltungen.

Info

Publication number
DE68922795D1
DE68922795D1 DE68922795T DE68922795T DE68922795D1 DE 68922795 D1 DE68922795 D1 DE 68922795D1 DE 68922795 T DE68922795 T DE 68922795T DE 68922795 T DE68922795 T DE 68922795T DE 68922795 D1 DE68922795 D1 DE 68922795D1
Authority
DE
Germany
Prior art keywords
measuring
integrated circuits
contact resistance
specific contact
specific
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68922795T
Other languages
English (en)
Other versions
DE68922795T2 (de
Inventor
William Thomas Lynch
Ng Kwok Kwok
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE68922795D1 publication Critical patent/DE68922795D1/de
Publication of DE68922795T2 publication Critical patent/DE68922795T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/14—Measuring resistance by measuring current or voltage obtained from a reference source
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
    • G01R31/275—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements for testing individual semiconductor components within integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
DE68922795T 1988-07-25 1989-07-13 Verfahren zum Messen des spezifischen Kontaktwiderstandes in integrierten Schaltungen. Expired - Fee Related DE68922795T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/224,512 US4896108A (en) 1988-07-25 1988-07-25 Test circuit for measuring specific contact resistivity of self-aligned contacts in integrated circuits

Publications (2)

Publication Number Publication Date
DE68922795D1 true DE68922795D1 (de) 1995-06-29
DE68922795T2 DE68922795T2 (de) 1995-11-23

Family

ID=22841024

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68922795T Expired - Fee Related DE68922795T2 (de) 1988-07-25 1989-07-13 Verfahren zum Messen des spezifischen Kontaktwiderstandes in integrierten Schaltungen.

Country Status (6)

Country Link
US (1) US4896108A (de)
EP (1) EP0352940B1 (de)
JP (1) JPH0658930B2 (de)
CA (1) CA1288526C (de)
DE (1) DE68922795T2 (de)
HK (1) HK103696A (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5059897A (en) * 1989-12-07 1991-10-22 Texas Instruments Incorporated Method and apparatus for testing passive substrates for integrated circuit mounting
US5101152A (en) * 1990-01-31 1992-03-31 Hewlett-Packard Company Integrated circuit transfer test device system utilizing lateral transistors
JPH0541437A (ja) * 1990-11-28 1993-02-19 Seiko Epson Corp 半導体装置
US5557209A (en) * 1990-12-20 1996-09-17 Hewlett-Packard Company Identification of pin-open faults by capacitive coupling through the integrated circuit package
US5625292A (en) * 1990-12-20 1997-04-29 Hewlett-Packard Company System for measuring the integrity of an electrical contact
US5519336A (en) * 1992-03-03 1996-05-21 Honeywell Inc. Method for electrically characterizing the insulator in SOI devices
US5286656A (en) * 1992-11-02 1994-02-15 National Semiconductor Corporation Individualized prepackage AC performance testing of IC dies on a wafer using DC parametric test patterns
US5420500A (en) * 1992-11-25 1995-05-30 Hewlett-Packard Company Pacitive electrode system for detecting open solder joints in printed circuit assemblies
JP2551340B2 (ja) * 1993-06-30 1996-11-06 日本電気株式会社 コンタクト抵抗測定用半導体集積回路装置およびその測定方法
US5504423A (en) * 1994-11-01 1996-04-02 The Research Foundation Of State University Of New York Method for modeling interactions in multilayered electronic packaging structures
US5548224A (en) * 1995-01-20 1996-08-20 Vlsi Technology, Inc Method and apparatus for wafer level prediction of thin oxide reliability
JP3727103B2 (ja) * 1996-04-05 2005-12-14 三菱電機株式会社 半導体素子の試験方法
US5786700A (en) * 1996-05-20 1998-07-28 International Business Machines Corporation Method for determining interconnection resistance of wire leads in electronic packages
JP2000505948A (ja) * 1996-11-08 2000-05-16 ダブリュ．エル．ゴア アンド アソシエイツ，インコーポレイティド 公称位置合せを向上させるための基準手法を用いる方法
US6181144B1 (en) * 1998-02-25 2001-01-30 Micron Technology, Inc. Semiconductor probe card having resistance measuring circuitry and method fabrication
US6172513B1 (en) * 1998-03-02 2001-01-09 Nec Corporation Method for analyzing electrical contact between two conductive members of semiconductor device without destruction thereof
US6297653B1 (en) 1999-06-28 2001-10-02 Micron Technology, Inc. Interconnect and carrier with resistivity measuring contacts for testing semiconductor components
GB0030346D0 (en) * 2000-12-13 2001-01-24 Mitel Semiconductor Ltd Integrated circuit test structure
KR100399976B1 (ko) * 2001-11-23 2003-09-29 주식회사 하이닉스반도체 콘택 저항 측정용 테스트 패턴 및 그 제조 방법
JP3559971B2 (ja) * 2001-12-11 2004-09-02 日産自動車株式会社 炭化珪素半導体装置およびその製造方法
JP3652671B2 (ja) * 2002-05-24 2005-05-25 沖電気工業株式会社 測定用配線パターン及びその測定方法
US7391620B2 (en) * 2003-04-18 2008-06-24 International Business Machines Corporation System for improving power distribution current measurement on printed circuit boards
US6977512B2 (en) * 2003-12-04 2005-12-20 Lsi Logic Corporation Method and apparatus for characterizing shared contacts in high-density SRAM cell design
US7332924B2 (en) * 2005-11-15 2008-02-19 Agere Systems, Inc. Embedded test circuitry and a method for testing a semiconductor device for breakdown, wearout or failure
US7655972B2 (en) * 2005-11-21 2010-02-02 International Business Machines Corporation Structure and method for MOSFET with reduced extension resistance
JP2008078628A (ja) * 2006-08-25 2008-04-03 Canon Inc 電子モジュールおよびその製造方法
JP2009272564A (ja) * 2008-05-09 2009-11-19 Toshiba Corp 半導体装置及び半導体装置の製造方法
CN102593101B (zh) * 2011-01-07 2014-04-16 上海华虹宏力半导体制造有限公司 P型埋层引出孔电阻值的监测结构
US9252202B2 (en) * 2011-08-23 2016-02-02 Wafertech, Llc Test structure and method for determining overlay accuracy in semiconductor devices using resistance measurement
CN103837744B (zh) * 2012-11-27 2016-05-25 中芯国际集成电路制造(上海)有限公司 Mos晶体管的外部寄生电阻的测量方法
US9678520B2 (en) 2013-03-15 2017-06-13 Dominion Resources, Inc. Electric power system control with planning of energy demand and energy efficiency using AMI-based data analysis
JP6419493B2 (ja) * 2013-09-05 2018-11-07 株式会社半導体エネルギー研究所 コンタクト抵抗測定パターン及び半導体装置
US10354930B2 (en) 2016-04-21 2019-07-16 International Business Machines Corporation S/D contact resistance measurement on FinFETs
US9768085B1 (en) 2016-07-25 2017-09-19 International Business Machines Corporation Top contact resistance measurement in vertical FETs
US10670641B2 (en) * 2017-08-22 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor test device and manufacturing method thereof
US10622257B2 (en) 2017-12-15 2020-04-14 International Business Machines Corporation VFET device design for top contact resistance measurement
CN109461668B (zh) * 2018-09-07 2022-07-08 上海大学 金电极与碲锌镉晶片接触电阻率的测试方法
US11393731B2 (en) * 2020-09-01 2022-07-19 Nanya Technology Corporation Semiconductor structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4542340A (en) * 1982-12-30 1985-09-17 Ibm Corporation Testing method and structure for leakage current characterization in the manufacture of dynamic RAM cells
US4517225A (en) * 1983-05-02 1985-05-14 Signetics Corporation Method for manufacturing an electrical interconnection by selective tungsten deposition
US4628144A (en) * 1983-06-07 1986-12-09 California Institute Of Technology Method for contact resistivity measurements on photovoltaic cells and cell adapted for such measurement
JPS6159743A (ja) * 1984-08-30 1986-03-27 Fujitsu Ltd 半導体装置
US4706015A (en) * 1986-01-09 1987-11-10 Chen James T C Method and circuit for reducing contact resistance of the potential probes of a four-point-probe in contact with a III-V compound semiconductor wafer
US4789825A (en) * 1986-05-14 1988-12-06 American Telephone And Telegraph Co., At&T Bell Laboratories Integrated circuit with channel length indicator

Also Published As

Publication number Publication date
DE68922795T2 (de) 1995-11-23
EP0352940B1 (de) 1995-05-24
CA1288526C (en) 1991-09-03
EP0352940A3 (de) 1991-01-09
HK103696A (en) 1996-06-21
EP0352940A2 (de) 1990-01-31
JPH0268946A (ja) 1990-03-08
US4896108A (en) 1990-01-23
JPH0658930B2 (ja) 1994-08-03

Similar Documents

Publication Publication Date Title
DE68922795T2 (de) Verfahren zum Messen des spezifischen Kontaktwiderstandes in integrierten Schaltungen.
DE69012439T2 (de) Tragbare Parkzeitmessvorrichtung und Verfahren zum Betreiben derselben.
DE3750219T2 (de) Verfahren und Einrichtung zum Messen von Ketonen.
DE3875398T2 (de) Vorrichtung zum feststellen von fehlern in lagern.
DE68918937D1 (de) Verfahren und vorrichtung zum ausgleich der bewegung in steigrohren.
DE3877815T2 (de) Verfahren und vorrichtung zum messen von fluessigkeit.
DE69129774D1 (de) Vorrichtung für Ultraschallmessungen in Bohrlöchern
DE69019402T2 (de) Prüfverfahren und -gerät für integrierte Schaltungen.
DE3577600D1 (de) Geraet zum messen von belagdicken.
DE68907772D1 (de) Hybridisationssonden zum nachweis von neisseria-staemme.
DE3580439D1 (de) Verfahren zum messen des oelgehaltes in fluessigkeiten.
DE69023472T2 (de) Gerät zum mehrdimensionalen messen von schmerz.
DE3785927T2 (de) Vorrichtung und Verfahren zum Messen der Eisdicke.
DE3684594D1 (de) Verfahren und vorrichtung zum messen der blickrichtung.
DE3769789D1 (de) Verfahren und anordnung zum messen von druecken in rohrfoermigen koerpern.
DE3784383D1 (de) Verfahren zum messen von filmdicken und vorrichtung dafuer.
DE3864093D1 (de) Messgeraet und verfahren zum beschraenken des durchflusses in einem bohrloch.
DE69223786D1 (de) Strommessanordnung zum Testen von integrierten Schaltungen
DE3672391D1 (de) Vorrichtung zum funktionstest gedruckter schaltungen.
DE59105392D1 (de) Verfahren zum Messen von Werkstücken.
DE69015735D1 (de) Verfahren und Vorrichtung zum Messen von schmalen Spalten.
DE69401121D1 (de) Vorrichtung zum bestimmen der kontrast-empfindlichkeit
DE3777232D1 (de) Vorrichtung zum messen der schichtdicke.
DE68922796T2 (de) Element und verfahren zum nachweis des rheumatoidfaktors.
DE69005256D1 (de) Verfahren und Einrichtung zum Ermitteln des Klopfens.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee