DE68922360T2 - Verfahren zur Herstellung von Metall-Polyimid-Verbundwerkstoffen. - Google Patents

Verfahren zur Herstellung von Metall-Polyimid-Verbundwerkstoffen.

Info

Publication number
DE68922360T2
DE68922360T2 DE68922360T DE68922360T DE68922360T2 DE 68922360 T2 DE68922360 T2 DE 68922360T2 DE 68922360 T DE68922360 T DE 68922360T DE 68922360 T DE68922360 T DE 68922360T DE 68922360 T2 DE68922360 T2 DE 68922360T2
Authority
DE
Germany
Prior art keywords
production
metal
polyimide composites
composites
polyimide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68922360T
Other languages
English (en)
Other versions
DE68922360D1 (de
Inventor
Shunichi Numata
Takao Miwa
Takayoshi Ikeda
Koji Fujisaki
Hisae Shimanoki
Kunio Miyazaki
Osamu Miura
Ryuji Watanabe
Toshio Miyamoto
Yukio Okoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE68922360D1 publication Critical patent/DE68922360D1/de
Application granted granted Critical
Publication of DE68922360T2 publication Critical patent/DE68922360T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
    • H01B3/306—Polyimides or polyesterimides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/481—Insulating layers on insulating parts, with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145—Organic substrates, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
DE68922360T 1988-09-30 1989-09-28 Verfahren zur Herstellung von Metall-Polyimid-Verbundwerkstoffen. Expired - Fee Related DE68922360T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63243986A JPH07102646B2 (ja) 1988-09-30 1988-09-30 金属とポリイミドの複合成形体

Publications (2)

Publication Number Publication Date
DE68922360D1 DE68922360D1 (de) 1995-06-01
DE68922360T2 true DE68922360T2 (de) 1995-09-28

Family

ID=17112011

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68922360T Expired - Fee Related DE68922360T2 (de) 1988-09-30 1989-09-28 Verfahren zur Herstellung von Metall-Polyimid-Verbundwerkstoffen.

Country Status (4)

Country Link
US (1) US5133989A (de)
EP (1) EP0361461B1 (de)
JP (1) JPH07102646B2 (de)
DE (1) DE68922360T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5209814A (en) * 1991-09-30 1993-05-11 E. I. Du Pont De Nemours And Company Method for diffusion patterning
WO1994018701A1 (en) * 1993-02-05 1994-08-18 W.L. Gore & Associates, Inc. Stress-resistant semiconductor chip-circuit board interconnect
TW294702B (de) * 1994-03-08 1997-01-01 Sumitomo Bakelite Co
KR100312150B1 (ko) * 1994-05-17 2001-12-28 마쯔모또 에이찌 액정배향제및액정표시소자
US5550199A (en) * 1994-12-02 1996-08-27 Exxon Research And Engineering Company Diepoxide crosslinked/esterified polyimide-aliphatic polyester copolymers
US7000313B2 (en) * 2001-03-08 2006-02-21 Ppg Industries Ohio, Inc. Process for fabricating circuit assemblies using electrodepositable dielectric coating compositions
US6992001B1 (en) * 2003-05-08 2006-01-31 Kulicke And Soffa Industries, Inc. Screen print under-bump metalization (UBM) to produce low cost flip chip substrate
JP4923678B2 (ja) * 2006-03-31 2012-04-25 日立化成工業株式会社 金属箔付フレキシブル基板及びフレキシブルプリント配線板
US8999764B2 (en) 2007-08-10 2015-04-07 International Business Machines Corporation Ionizing radiation blocking in IC chip to reduce soft errors
US20090130468A1 (en) * 2007-11-16 2009-05-21 Li-Hua Wang Polyamic acid composition, method for preparing the same, method for preparing polyimide and polyimide flexible metal-clad laminates
KR102068870B1 (ko) * 2016-06-17 2020-01-21 주식회사 엘지화학 전극 구조체, 이를 포함하는 전자 소자 및 이의 제조방법
US20230025661A1 (en) * 2021-06-25 2023-01-26 Essex Furukawa Magnet Wire Usa Llc Amine-Substituted 2-Amino-Ethan-1-Olyl Polymers, Polyimides, Articles, and Methods
CN114355727A (zh) * 2022-01-17 2022-04-15 苏州理硕科技有限公司 一种光刻胶组合物及应用

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1570660A1 (de) * 1964-04-15 1970-03-19 Gen Electric Polysilylharnstoffe sowie Verfahren zu ihrer Herstellung
FR1571736A (de) * 1967-06-26 1969-06-20
CH549069A (de) * 1971-02-26 1974-05-15 Ciba Geigy Ag Verfahren zur herstellung von in organischen loesungsmitteln loeslichen, n-silylgruppenhaltigen polymeren.
JPS5545746A (en) * 1978-09-29 1980-03-31 Hitachi Ltd Reactive polymer composition
JPS55135124A (en) * 1979-04-10 1980-10-21 Hitachi Chem Co Ltd Production of polyimide-amide carboxylic acid
EP0019391B1 (de) * 1979-05-12 1982-10-06 Fujitsu Limited Verfahren zur Herstellung einer elektronischen Vorrichtung mit Vielschicht-Verdrahtungsstruktur
JPS5888741A (ja) * 1981-11-20 1983-05-26 Hitachi Chem Co Ltd 感光性樹脂組成物及び感光性樹脂組成物積層体
JPS5968332A (ja) * 1982-10-13 1984-04-18 Nitto Electric Ind Co Ltd 感光性樹脂組成物
EP0116297B1 (de) * 1983-01-15 1987-12-02 Akzo GmbH Polyimid-Laminate mit hoher Schälfestigkeit und Verfahren zu deren Herstellung
US4648179A (en) * 1983-06-30 1987-03-10 International Business Machines Corporation Process of making interconnection structure for semiconductor device
DE3486131T2 (de) * 1983-08-01 1993-10-28 Hitachi Ltd Harzmaterial mit geringer thermischer Ausdehnung für Verdrahtungsisolationsfolie.
EP0143531A1 (de) * 1983-09-30 1985-06-05 Electro Materials Corp. Of America Verfahren zur Herstellung eines lötbaren, elektrisch leitenden Filmes auf einem Substrat und elektrisch leitende Masse
US4699803A (en) * 1983-11-30 1987-10-13 International Business Machines Corporation Method for forming electrical components comprising cured vinyl and/or acetylene terminated copolymers
US4654223A (en) * 1983-11-30 1987-03-31 International Business Machines Corporation Method for forming a film of dielectric material on an electric component
US4656050A (en) * 1983-11-30 1987-04-07 International Business Machines Corporation Method of producing electronic components utilizing cured vinyl and/or acetylene terminated copolymers
JPS60206639A (ja) * 1984-03-31 1985-10-18 日東電工株式会社 ポリイミド−金属箔複合フイルムの製造方法
US4758476A (en) * 1984-12-12 1988-07-19 Hitachi Chemical Company, Ltd. Polyimide precursor resin composition and semiconductor device using the same
CA1290490C (en) * 1985-11-20 1991-10-08 Masakazu Uekita Amphiphilic high polymer and process for producing the same
CA1294731C (en) * 1986-04-25 1992-01-21 Masakazu Uekita Copolymeric and amphiphilic polyimide precursor, process for preparing the same and thin film
US4943471A (en) * 1986-05-20 1990-07-24 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Patterned thin film and process for preparing the same
JPH0727966B2 (ja) * 1986-07-04 1995-03-29 日立化成工業株式会社 半導体装置

Also Published As

Publication number Publication date
DE68922360D1 (de) 1995-06-01
EP0361461A3 (en) 1990-12-19
EP0361461A2 (de) 1990-04-04
EP0361461B1 (de) 1995-04-26
JPH07102646B2 (ja) 1995-11-08
JPH0292535A (ja) 1990-04-03
US5133989A (en) 1992-07-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee