DE68921567D1 - Flüssigkristallanzeigetafel mit verminderten Pixeldefekten. - Google Patents

Flüssigkristallanzeigetafel mit verminderten Pixeldefekten.

Info

Publication number
DE68921567D1
DE68921567D1 DE68921567T DE68921567T DE68921567D1 DE 68921567 D1 DE68921567 D1 DE 68921567D1 DE 68921567 T DE68921567 T DE 68921567T DE 68921567 T DE68921567 T DE 68921567T DE 68921567 D1 DE68921567 D1 DE 68921567D1
Authority
DE
Germany
Prior art keywords
liquid crystal
crystal display
display panel
pixel defects
reduced pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68921567T
Other languages
English (en)
Other versions
DE68921567T2 (de
Inventor
Setsuo Kaneko
Osamu Sukegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63304383A external-priority patent/JPH02149824A/ja
Priority claimed from JP63313341A external-priority patent/JPH02157827A/ja
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE68921567D1 publication Critical patent/DE68921567D1/de
Publication of DE68921567T2 publication Critical patent/DE68921567T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136268—Switch defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
DE68921567T 1988-11-30 1989-11-29 Flüssigkristallanzeigetafel mit verminderten Pixeldefekten. Expired - Lifetime DE68921567T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63304383A JPH02149824A (ja) 1988-11-30 1988-11-30 薄膜トランジスタ
JP63313341A JPH02157827A (ja) 1988-12-12 1988-12-12 薄膜トランジスタアレイ装置

Publications (2)

Publication Number Publication Date
DE68921567D1 true DE68921567D1 (de) 1995-04-13
DE68921567T2 DE68921567T2 (de) 1995-07-06

Family

ID=26563886

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68921567T Expired - Lifetime DE68921567T2 (de) 1988-11-30 1989-11-29 Flüssigkristallanzeigetafel mit verminderten Pixeldefekten.

Country Status (3)

Country Link
US (1) US5166816A (de)
EP (1) EP0372821B1 (de)
DE (1) DE68921567T2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449598B1 (de) * 1990-03-27 1996-03-13 Canon Kabushiki Kaisha Dünnschicht-Halbleiterbauelement
US6143582A (en) * 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules
US6593978B2 (en) * 1990-12-31 2003-07-15 Kopin Corporation Method for manufacturing active matrix liquid crystal displays
US5475514A (en) * 1990-12-31 1995-12-12 Kopin Corporation Transferred single crystal arrayed devices including a light shield for projection displays
US6627953B1 (en) 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5499124A (en) * 1990-12-31 1996-03-12 Vu; Duy-Phach Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
KR960001611B1 (ko) 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
JP2794499B2 (ja) 1991-03-26 1998-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2845303B2 (ja) * 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
US5334859A (en) * 1991-09-05 1994-08-02 Casio Computer Co., Ltd. Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
DE69223118T2 (de) * 1991-11-26 1998-03-05 Casio Computer Co Ltd Dünnschicht-Transistor-Panel und dessen Herstellungsmethode
US5424244A (en) 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
CN100483651C (zh) * 1992-08-27 2009-04-29 株式会社半导体能源研究所 半导体器件的制造方法
US6608654B2 (en) 1992-09-11 2003-08-19 Kopin Corporation Methods of fabricating active matrix pixel electrodes
US5705424A (en) * 1992-09-11 1998-01-06 Kopin Corporation Process of fabricating active matrix pixel electrodes
JPH0843860A (ja) * 1994-04-28 1996-02-16 Xerox Corp 低電圧駆動アクティブ・マトリックス液晶ディスプレイにおける電気的に分離されたピクセル・エレメント
US6867432B1 (en) * 1994-06-09 2005-03-15 Semiconductor Energy Lab Semiconductor device having SiOxNy gate insulating film
KR100351871B1 (ko) * 1995-09-12 2003-01-29 엘지.필립스 엘시디 주식회사 박막트랜지스터제조방법
US6747721B1 (en) * 1996-02-29 2004-06-08 Sanyo Electric Co., Ltd. Liquid crystal display
US6746905B1 (en) 1996-06-20 2004-06-08 Kabushiki Kaisha Toshiba Thin film transistor and manufacturing process therefor
JP3592535B2 (ja) 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6656779B1 (en) * 1998-10-06 2003-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof
KR100629174B1 (ko) * 1999-12-31 2006-09-28 엘지.필립스 엘시디 주식회사 박막트랜지스터 기판 및 그의 제조방법
KR100796749B1 (ko) 2001-05-16 2008-01-22 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 어레이 기판
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US20050253802A1 (en) * 2004-05-14 2005-11-17 Wright Charles A Gyricon media using amorphous silicon thin film transistor active matrix arrays and a refresh method for the same
US7221039B2 (en) * 2004-06-24 2007-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film transistor (TFT) device structure employing silicon rich silicon oxide passivation layer
KR101125254B1 (ko) * 2004-12-31 2012-03-21 엘지디스플레이 주식회사 프린지 필드 스위칭 타입의 박막 트랜지스터 기판 및 그제조 방법과, 그를 이용한 액정 패널 및 그 제조 방법
KR101290282B1 (ko) * 2006-11-24 2013-07-26 삼성디스플레이 주식회사 액정 표시 장치 및 이의 제조 방법
KR101516415B1 (ko) * 2008-09-04 2015-05-04 삼성디스플레이 주식회사 박막트랜지스터 기판, 이의 제조 방법, 및 이를 갖는 표시장치
CN102496628B (zh) 2008-09-19 2015-09-16 株式会社半导体能源研究所 显示装置
CN101819363B (zh) * 2009-02-27 2011-12-28 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4666253A (en) * 1984-06-28 1987-05-19 Canon Kabushiki Kaisha Liquid crystal device
US4705358A (en) * 1985-06-10 1987-11-10 Seiko Instruments & Electronics Ltd. Substrate for active matrix display
US4855806A (en) * 1985-08-02 1989-08-08 General Electric Company Thin film transistor with aluminum contacts and nonaluminum metallization
DE3714164A1 (de) * 1986-04-30 1987-11-05 Sharp Kk Fluessigkristallanzeige
FR2605442B1 (fr) * 1986-10-17 1988-12-09 Thomson Csf Ecran de visualisation electrooptique a transistors de commande et procede de realisation
JPS63103210A (ja) * 1986-10-20 1988-05-07 Victor Co Of Japan Ltd アクテイブマトリツクス形液晶表示素子
JPH0691252B2 (ja) * 1986-11-27 1994-11-14 日本電気株式会社 薄膜トランジスタアレイ
JP2594971B2 (ja) * 1987-09-09 1997-03-26 カシオ計算機株式会社 薄膜トランジスタパネル
US5032883A (en) * 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
US4778258A (en) * 1987-10-05 1988-10-18 General Electric Company Protective tab structure for use in the fabrication of matrix addressed thin film transistor liquid crystal displays
JPH0253715A (ja) * 1988-08-18 1990-02-22 Hoyu Co Ltd 自動酸化型一剤式染毛剤

Also Published As

Publication number Publication date
EP0372821A3 (de) 1991-05-08
EP0372821A2 (de) 1990-06-13
EP0372821B1 (de) 1995-03-08
DE68921567T2 (de) 1995-07-06
US5166816A (en) 1992-11-24

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Legal Events

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