DE68918144T2 - System zur Belichtung mittels geladener Teilchenstrahlen. - Google Patents

System zur Belichtung mittels geladener Teilchenstrahlen.

Info

Publication number
DE68918144T2
DE68918144T2 DE68918144T DE68918144T DE68918144T2 DE 68918144 T2 DE68918144 T2 DE 68918144T2 DE 68918144 T DE68918144 T DE 68918144T DE 68918144 T DE68918144 T DE 68918144T DE 68918144 T2 DE68918144 T2 DE 68918144T2
Authority
DE
Germany
Prior art keywords
exposure
charged particle
particle beams
beams
charged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68918144T
Other languages
English (en)
Other versions
DE68918144D1 (de
Inventor
Hiroshi Yasuda
Junichi Kai
Toyotaka Kataoka
Yasushi Takahashi
Shinji Miyaki
Kiichi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63074792A external-priority patent/JP2901246B2/ja
Priority claimed from JP63107582A external-priority patent/JPH01278725A/ja
Priority claimed from JP15187788A external-priority patent/JP2617993B2/ja
Priority claimed from JP63206164A external-priority patent/JP2721190B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE68918144D1 publication Critical patent/DE68918144D1/de
Publication of DE68918144T2 publication Critical patent/DE68918144T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
DE68918144T 1988-03-30 1989-03-30 System zur Belichtung mittels geladener Teilchenstrahlen. Expired - Fee Related DE68918144T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP63074792A JP2901246B2 (ja) 1988-03-30 1988-03-30 荷電粒子ビーム露光装置
JP63107582A JPH01278725A (ja) 1988-05-02 1988-05-02 荷電粒子ビーム露光装置
JP15187788A JP2617993B2 (ja) 1988-06-20 1988-06-20 電子ビーム露光装置のブランキングアレーアパーチャの製造方法
JP63206164A JP2721190B2 (ja) 1988-08-18 1988-08-18 電子ビーム露光装置及びその露光方法

Publications (2)

Publication Number Publication Date
DE68918144D1 DE68918144D1 (de) 1994-10-20
DE68918144T2 true DE68918144T2 (de) 1995-01-12

Family

ID=27465735

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918144T Expired - Fee Related DE68918144T2 (de) 1988-03-30 1989-03-30 System zur Belichtung mittels geladener Teilchenstrahlen.

Country Status (4)

Country Link
US (1) US4980567A (de)
EP (1) EP0335711B1 (de)
KR (1) KR920004177B1 (de)
DE (1) DE68918144T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902898A (en) * 1988-04-26 1990-02-20 Microelectronics Center Of North Carolina Wand optics column and associated array wand and charged particle source
US5262341A (en) * 1989-05-19 1993-11-16 Fujitsu Limited Blanking aperture array and charged particle beam exposure method
US5144142A (en) * 1989-05-19 1992-09-01 Fujitsu Limited Blanking aperture array, method for producing blanking aperture array, charged particle beam exposure apparatus and charged particle beam exposure method
JP2685603B2 (ja) * 1989-10-20 1997-12-03 日本電子株式会社 電子線装置
JP2625219B2 (ja) * 1989-10-23 1997-07-02 株式会社日立製作所 電子線描画装置
JP2523931B2 (ja) * 1990-04-16 1996-08-14 富士通株式会社 ブランキングアパ―チャアレ―の製造方法
JP2555775B2 (ja) * 1990-11-28 1996-11-20 富士通株式会社 荷電粒子ビーム偏向装置およびその製造方法
JP3121098B2 (ja) * 1992-03-17 2000-12-25 富士通株式会社 荷電粒子ビーム露光の方法と装置
US5386103A (en) * 1993-07-06 1995-01-31 Neurnetics Ltd. Identification and verification system
US5528048A (en) * 1994-03-15 1996-06-18 Fujitsu Limited Charged particle beam exposure system and method
JP3299632B2 (ja) * 1994-06-24 2002-07-08 株式会社日立製作所 電子線描画装置
US5770863A (en) * 1995-10-24 1998-06-23 Nikon Corporation Charged particle beam projection apparatus
US5834783A (en) * 1996-03-04 1998-11-10 Canon Kabushiki Kaisha Electron beam exposure apparatus and method, and device manufacturing method
JP3796317B2 (ja) * 1996-06-12 2006-07-12 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
US5929454A (en) * 1996-06-12 1999-07-27 Canon Kabushiki Kaisha Position detection apparatus, electron beam exposure apparatus, and methods associated with them
JP3927620B2 (ja) * 1996-06-12 2007-06-13 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
US5892231A (en) * 1997-02-05 1999-04-06 Lockheed Martin Energy Research Corporation Virtual mask digital electron beam lithography
US6498349B1 (en) 1997-02-05 2002-12-24 Ut-Battelle Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy
US6104035A (en) * 1997-06-02 2000-08-15 Canon Kabushiki Kaisha Electron-beam exposure apparatus and method
US7062073B1 (en) 1999-01-19 2006-06-13 Tumey David M Animated toy utilizing artificial intelligence and facial image recognition
JP2001168018A (ja) 1999-12-13 2001-06-22 Canon Inc 荷電粒子線露光装置、荷電粒子線露光方法及び露光補正データの決定方法、該方法を適用したデバイスの製造方法。
JP2003031172A (ja) * 2001-07-16 2003-01-31 Nikon Corp 偏向器とその製造方法、及び荷電粒子露光装置
KR101368027B1 (ko) * 2002-10-25 2014-02-26 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 장치
US7446601B2 (en) * 2003-06-23 2008-11-04 Astronix Research, Llc Electron beam RF amplifier and emitter
EP2002458B1 (de) * 2006-04-03 2009-11-04 IMS Nanofabrication AG Teilchenstrahl-belichtungsvorrichtung mit gesamtmodulation eines strukturierten strahls
DE102008010123A1 (de) * 2007-02-28 2008-09-04 Ims Nanofabrication Ag Vielstrahl-Ablenkarray-Einrichtung für maskenlose Teilchenstrahl-Bearbeitung
JP2009237001A (ja) * 2008-03-26 2009-10-15 Fujifilm Corp 電子ビーム描画方法、微細パターン描画システム、凹凸パターン担持体の製造方法および磁気ディスク媒体の製造方法
TWI477925B (zh) 2011-10-04 2015-03-21 Nuflare Technology Inc Multi - beam charged particle beam mapping device and multi - beam charged particle beam rendering method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119178A (en) * 1976-03-31 1977-10-06 Toshiba Corp Electron beam exposure device
CA1100237A (en) * 1977-03-23 1981-04-28 Roger F.W. Pease Multiple electron beam exposure system
US4200794A (en) * 1978-11-08 1980-04-29 Control Data Corporation Micro lens array and micro deflector assembly for fly's eye electron beam tubes using silicon components and techniques of fabrication and assembly
US4472636A (en) * 1979-11-01 1984-09-18 Eberhard Hahn Method of and device for corpuscular projection
DD158726A3 (de) * 1980-07-01 1983-02-02 Georg Kuschel Elektrostatisches ablenksystem
EP0069728A4 (de) * 1981-01-23 1983-07-08 Veeco Instr Inc Belichtungssystem für parallel geladenen teilchenstrahl.
DD225879A3 (de) * 1983-07-01 1985-08-07 Zeiss Jena Veb Carl Verfahren und einrichtung zur korpuskularbestrahlung eines targets
JPS6142128A (ja) * 1984-08-06 1986-02-28 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
DE3504714A1 (de) * 1985-02-12 1986-08-14 Siemens AG, 1000 Berlin und 8000 München Lithografiegeraet zur erzeugung von mikrostrukturen
US4742234A (en) * 1985-09-27 1988-05-03 American Telephone And Telegraph Company, At&T Bell Laboratories Charged-particle-beam lithography
US4902898A (en) * 1988-04-26 1990-02-20 Microelectronics Center Of North Carolina Wand optics column and associated array wand and charged particle source

Also Published As

Publication number Publication date
EP0335711A2 (de) 1989-10-04
EP0335711A3 (en) 1990-07-18
US4980567A (en) 1990-12-25
KR920004177B1 (en) 1992-05-30
EP0335711B1 (de) 1994-09-14
KR890015435A (ko) 1989-10-30
DE68918144D1 (de) 1994-10-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee