DE68914464D1 - Metallisierungssysteme für heiz-/sensorelemente. - Google Patents

Metallisierungssysteme für heiz-/sensorelemente.

Info

Publication number
DE68914464D1
DE68914464D1 DE89910851T DE68914464T DE68914464D1 DE 68914464 D1 DE68914464 D1 DE 68914464D1 DE 89910851 T DE89910851 T DE 89910851T DE 68914464 T DE68914464 T DE 68914464T DE 68914464 D1 DE68914464 D1 DE 68914464D1
Authority
DE
Germany
Prior art keywords
heating
sensor elements
metalization
systems
metalization systems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89910851T
Other languages
English (en)
Other versions
DE68914464T2 (de
Inventor
Kuang Yang
David Gutierrez
Georg Gimpelson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of DE68914464D1 publication Critical patent/DE68914464D1/de
Application granted granted Critical
Publication of DE68914464T2 publication Critical patent/DE68914464T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/021—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient formed as one or more layers or coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P5/00—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft
    • G01P5/10—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12812—Diverse refractory group metal-base components: alternative to or next to each other
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
    • Y10T428/12833—Alternative to or next to each other
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12868—Group IB metal-base component alternative to platinum group metal-base component [e.g., precious metal, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
DE68914464T 1988-09-30 1989-09-18 Metallisierungssysteme für heiz-/sensorelemente. Expired - Fee Related DE68914464T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/257,074 US5006421A (en) 1988-09-30 1988-09-30 Metalization systems for heater/sensor elements
PCT/EP1989/001081 WO1990003650A1 (en) 1988-09-30 1989-09-18 Metallization systems for heater/sensor elements

Publications (2)

Publication Number Publication Date
DE68914464D1 true DE68914464D1 (de) 1994-05-11
DE68914464T2 DE68914464T2 (de) 1994-09-15

Family

ID=22974768

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68914464T Expired - Fee Related DE68914464T2 (de) 1988-09-30 1989-09-18 Metallisierungssysteme für heiz-/sensorelemente.

Country Status (6)

Country Link
US (1) US5006421A (de)
EP (1) EP0436601B1 (de)
JP (1) JPH04501040A (de)
CA (1) CA1313570C (de)
DE (1) DE68914464T2 (de)
WO (1) WO1990003650A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5235312A (en) * 1991-11-18 1993-08-10 Micron Technology, Inc. Polysilicon resistors and methods of fabrication
JPH10508430A (ja) * 1994-06-09 1998-08-18 チップスケール・インコーポレーテッド 抵抗器の製造
US5451371A (en) * 1994-06-09 1995-09-19 Ford Motor Company High-sensitivity, silicon-based, microcalorimetric gas sensor
US5641421A (en) * 1994-08-18 1997-06-24 Advanced Metal Tech Ltd Amorphous metallic alloy electrical heater systems
US5856235A (en) * 1995-04-12 1999-01-05 Northrop Grumman Corporation Process of vacuum annealing a thin film metallization on high purity alumina
DE19542379A1 (de) * 1995-11-14 1997-05-15 Messerschmid Ernst Prof Dr Verfahren und Vorrichtung zur simultanen Messung des Gesamtvolumenstroms und von Gaspartialdrücken
DE19601592C1 (de) * 1996-01-18 1997-05-07 Bosch Gmbh Robert Sensor und Verfahren zur Herstellung eines Sensors
US7041548B1 (en) * 1996-07-16 2006-05-09 Micron Technology, Inc. Methods of forming a gate stack that is void of silicon clusters within a metallic silicide film thereof
US7078342B1 (en) 1996-07-16 2006-07-18 Micron Technology, Inc. Method of forming a gate stack
JP3355127B2 (ja) * 1998-02-23 2002-12-09 株式会社日立製作所 熱式空気流量センサ
US6398349B1 (en) * 1998-03-04 2002-06-04 Seiko Epson Corporation Piezoelectric device, ink-jet printing head, and method for manufacturing same, and printer
FI108152B (fi) * 1999-07-22 2001-11-30 Metso Paper Inc Menetelmä ja laitteisto kuitumassaseoksen pesemiseksi
US7095309B1 (en) * 2000-10-20 2006-08-22 Silverbrook Research Pty Ltd Thermoelastic actuator design
US7154372B2 (en) * 2001-01-10 2006-12-26 Sensirion Ag Micromechanical flow sensor with tensile coating
US6732422B1 (en) * 2002-01-04 2004-05-11 Taiwan Semiconductor Manufacturing Company Method of forming resistors
JP3699703B2 (ja) * 2002-11-06 2005-09-28 三菱電機株式会社 発熱構造体および熱式センサ
US20050069687A1 (en) * 2003-09-25 2005-03-31 Barth Phillip W. Apparatus and method for making a tensile diaphragm with a compressive region
JP2006258678A (ja) * 2005-03-18 2006-09-28 Hitachi Ltd 熱式流量計測装置
US20060266737A1 (en) * 2005-05-27 2006-11-30 Hanestad Ronald J Process for removal of metals and alloys from a substrate
JP4966526B2 (ja) * 2005-09-07 2012-07-04 日立オートモティブシステムズ株式会社 流量センサ
US20080273572A1 (en) * 2006-06-02 2008-11-06 James Madison University Thermal detector for chemical or biological agents
US7609144B2 (en) * 2006-12-08 2009-10-27 Analog Devices, Inc. High resistivity thin film composition and fabrication method
FR2958754B1 (fr) * 2010-04-12 2012-10-26 Centre Nat Rech Scient Capteur a fil chaud de taille sublimillimetrique et procede de realisation associe.
CN105144838B (zh) * 2013-05-15 2017-09-12 捷温加拿大有限公司 具有感测能力的传导性加热器
US9701232B2 (en) 2013-10-11 2017-07-11 Gentherm Gmbh Occupancy sensing with heating devices
WO2015175335A1 (en) 2014-05-13 2015-11-19 Gentherm Gmbh Temperature control device for a steering device
CN106384635B (zh) * 2016-08-26 2018-10-02 中国振华集团云科电子有限公司 一种片式ntcr及其制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1540167C3 (de) * 1965-06-04 1974-10-03 Micro-Electric Ag, Zuerich (Schweiz) Cermet-Widerstandsschicht für ein Potentiometer
US3540920A (en) * 1967-08-24 1970-11-17 Texas Instruments Inc Process of simultaneously vapor depositing silicides of chromium and titanium
US3664874A (en) * 1969-12-31 1972-05-23 Nasa Tungsten contacts on silicon substrates
JPS536328B2 (de) * 1973-11-13 1978-03-07
US4127840A (en) * 1977-02-22 1978-11-28 Conrac Corporation Solid state force transducer
US4194174A (en) * 1978-06-19 1980-03-18 Microwave Semiconductor Corp. Method for fabricating ballasted finger electrode
DE2965814D1 (en) * 1979-03-21 1983-08-11 Bbc Brown Boveri & Cie Thin film resistor having a high temperature coefficient and method of manufacturing the same
US4391846A (en) * 1979-04-05 1983-07-05 The United States Of America As Represented By The United States Department Of Energy Method of preparing high-temperature-stable thin-film resistors
CA1216330A (en) * 1983-02-07 1987-01-06 Junji Manaka Low power gas detector
US4569742A (en) * 1983-06-20 1986-02-11 Honeywell Inc. Reactively sputtered chrome silicon nitride resistors
JPH0647291B2 (ja) * 1984-08-17 1994-06-22 京セラ株式会社 サ−マルヘツド
US4760369A (en) * 1985-08-23 1988-07-26 Texas Instruments Incorporated Thin film resistor and method
DE3630393C2 (de) * 1985-09-10 1994-06-23 Sharp Kk Widerstandsthermometer
US4682143A (en) * 1985-10-30 1987-07-21 Advanced Micro Devices, Inc. Thin film chromium-silicon-carbon resistor
US4746896A (en) * 1986-05-08 1988-05-24 North American Philips Corp. Layered film resistor with high resistance and high stability
US4803457A (en) * 1987-02-27 1989-02-07 Chapel Jr Roy W Compound resistor and manufacturing method therefore
FR2614726A1 (fr) * 1987-04-30 1988-11-04 Seiko Instr Inc Resistance a couche mince et procede de fabrication
US4804438A (en) * 1988-02-08 1989-02-14 Eastman Kodak Company Method of providing a pattern of conductive platinum silicide
USH546H (en) * 1988-02-26 1988-11-01 The United States Of America As Represented By The Secretary Of The Air Force Formation of thin-film resistors on silicon substrates

Also Published As

Publication number Publication date
JPH04501040A (ja) 1992-02-20
CA1313570C (en) 1993-02-09
EP0436601B1 (de) 1994-04-06
WO1990003650A1 (en) 1990-04-05
DE68914464T2 (de) 1994-09-15
EP0436601A1 (de) 1991-07-17
US5006421A (en) 1991-04-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee