DE68908929D1 - Verfahren und Tiegel zur Herstellung einer ternären, heteroepitaktischen Schicht auf einer binären Schicht. - Google Patents

Verfahren und Tiegel zur Herstellung einer ternären, heteroepitaktischen Schicht auf einer binären Schicht.

Info

Publication number
DE68908929D1
DE68908929D1 DE89200743T DE68908929T DE68908929D1 DE 68908929 D1 DE68908929 D1 DE 68908929D1 DE 89200743 T DE89200743 T DE 89200743T DE 68908929 T DE68908929 T DE 68908929T DE 68908929 D1 DE68908929 D1 DE 68908929D1
Authority
DE
Germany
Prior art keywords
layer
ternary
crucible
producing
binary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89200743T
Other languages
English (en)
Other versions
DE68908929T2 (de
Inventor
Laurent Grijol
Martret Catherine Le
Beatrice Baladi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE68908929D1 publication Critical patent/DE68908929D1/de
Application granted granted Critical
Publication of DE68908929T2 publication Critical patent/DE68908929T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE89200743T 1988-03-29 1989-03-23 Verfahren und Tiegel zur Herstellung einer ternären, heteroepitaktischen Schicht auf einer binären Schicht. Expired - Fee Related DE68908929T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8804077A FR2629475A1 (fr) 1988-03-29 1988-03-29 Procede d'obtention d'une couche monocristalline ternaire hetero-epitaxiee sur une couche binaire et creuset pour sa mise en oeuvre

Publications (2)

Publication Number Publication Date
DE68908929D1 true DE68908929D1 (de) 1993-10-14
DE68908929T2 DE68908929T2 (de) 1994-03-24

Family

ID=9364725

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89200743T Expired - Fee Related DE68908929T2 (de) 1988-03-29 1989-03-23 Verfahren und Tiegel zur Herstellung einer ternären, heteroepitaktischen Schicht auf einer binären Schicht.

Country Status (5)

Country Link
US (1) US5064780A (de)
EP (1) EP0335453B1 (de)
JP (1) JPH0613436B2 (de)
DE (1) DE68908929T2 (de)
FR (1) FR2629475A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6613162B1 (en) * 1999-10-25 2003-09-02 Rensselaer Polytechnic Institute Multicomponent homogeneous alloys and method for making same
US7641733B2 (en) * 2004-09-01 2010-01-05 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
US9556059B2 (en) * 2009-08-03 2017-01-31 Hong Li Glass compositions and fibers made therefrom
US9446983B2 (en) 2009-08-03 2016-09-20 Ppg Industries Ohio, Inc. Glass compositions and fibers made therefrom
US9593038B2 (en) 2009-08-03 2017-03-14 Ppg Industries Ohio, Inc. Glass compositions and fibers made therefrom

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990392A (en) * 1968-12-31 1976-11-09 U.S. Philips Corporation Epitaxial growth apparatus
US3925117A (en) * 1971-05-28 1975-12-09 Texas Instruments Inc Method for the two-stage epitaxial growth of iii' v semiconductor compounds
US3762367A (en) * 1973-01-12 1973-10-02 Handotai Kenkyu Shinkokai Growth apparatus for a liquid growth multi-layer film
US4001055A (en) * 1973-05-28 1977-01-04 Charmakadze Revaz A Semiconductor light-emitting diode and method for producing same
FR2481324A1 (fr) * 1980-04-23 1981-10-30 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depots mettant en jeu ladite nacelle
JPS5816535A (ja) * 1981-07-23 1983-01-31 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
DE3339272A1 (de) * 1983-10-28 1985-05-09 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von a(pfeil abwaerts)3(pfeil abwaerts)b(pfeil abwaerts)5(pfeil abwaerts)-lumineszenzdioden
US4755485A (en) * 1986-05-27 1988-07-05 Hewlett-Packard Company Method of making light-emitting diodes
JPS6321282A (ja) * 1986-07-16 1988-01-28 Sumitomo Electric Ind Ltd 混晶半導体の液相エピタキシヤル積層法
JPS6477118A (en) * 1987-09-18 1989-03-23 Hitachi Cable Manufacture of ga1-xalxas epitaxial wafer
JP2579326B2 (ja) * 1987-11-13 1997-02-05 三菱化学株式会社 エピタキシャル・ウエハ及び発光ダイオード
JPH0279422A (ja) * 1988-09-14 1990-03-20 Sanyo Electric Co Ltd 液相エピタキシヤル成長装置及び成長方法

Also Published As

Publication number Publication date
EP0335453A1 (de) 1989-10-04
FR2629475A1 (fr) 1989-10-06
US5064780A (en) 1991-11-12
EP0335453B1 (de) 1993-09-08
JPH01286988A (ja) 1989-11-17
JPH0613436B2 (ja) 1994-02-23
DE68908929T2 (de) 1994-03-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee