DE68908872D1 - Verfahren zum Ziehen von Einkristallen. - Google Patents

Verfahren zum Ziehen von Einkristallen.

Info

Publication number
DE68908872D1
DE68908872D1 DE89108388T DE68908872T DE68908872D1 DE 68908872 D1 DE68908872 D1 DE 68908872D1 DE 89108388 T DE89108388 T DE 89108388T DE 68908872 T DE68908872 T DE 68908872T DE 68908872 D1 DE68908872 D1 DE 68908872D1
Authority
DE
Germany
Prior art keywords
single crystals
pulling single
pulling
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE89108388T
Other languages
English (en)
Other versions
DE68908872T2 (de
Inventor
Naoki Ono
Michio Kida
Yoshiaki Arai
Kensho Sahira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Super Quartz Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2519189A external-priority patent/JP2615968B2/ja
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Application granted granted Critical
Publication of DE68908872D1 publication Critical patent/DE68908872D1/de
Publication of DE68908872T2 publication Critical patent/DE68908872T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B15/00—Drawing glass upwardly from the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE89108388T 1989-02-03 1989-05-10 Verfahren zum Ziehen von Einkristallen. Expired - Lifetime DE68908872T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2519189A JP2615968B2 (ja) 1988-02-04 1989-02-03 単結晶の引き上げ方法

Publications (2)

Publication Number Publication Date
DE68908872D1 true DE68908872D1 (de) 1993-10-07
DE68908872T2 DE68908872T2 (de) 1994-02-10

Family

ID=12159075

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89108388T Expired - Lifetime DE68908872T2 (de) 1989-02-03 1989-05-10 Verfahren zum Ziehen von Einkristallen.

Country Status (4)

Country Link
US (1) US4980015A (de)
EP (1) EP0388503B1 (de)
KR (1) KR940009938B1 (de)
DE (1) DE68908872T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5312600A (en) * 1990-03-20 1994-05-17 Toshiba Ceramics Co. Silicon single crystal manufacturing apparatus
DE4123336A1 (de) * 1991-07-15 1993-01-21 Leybold Ag Kristallziehverfahren und vorrichtung zu seiner durchfuehrung
JP2506525B2 (ja) * 1992-01-30 1996-06-12 信越半導体株式会社 シリコン単結晶の製造方法
JP2888079B2 (ja) * 1993-02-04 1999-05-10 信越半導体株式会社 シリコン単結晶引上げ用ルツボ
JP3015656B2 (ja) * 1994-03-23 2000-03-06 株式会社東芝 半絶縁性ＧａＡｓ単結晶の製造方法および製造装置
JP3484870B2 (ja) * 1996-03-27 2004-01-06 信越半導体株式会社 連続チャージ法によるシリコン単結晶の製造方法およびドーパント供給装置
CA2374944A1 (en) 1999-06-10 2000-12-21 Nigel Hacker Spin-on-glass anti-reflective coatings for photolithography
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
US6312517B1 (en) * 2000-05-11 2001-11-06 Memc Electronic Materials, Inc. Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
US7132091B2 (en) * 2001-09-28 2006-11-07 Memc Electronic Materials, Inc. Single crystal silicon ingot having a high arsenic concentration
WO2003044600A1 (en) 2001-11-15 2003-05-30 Honeywell International Inc. Spin-on anti-reflective coatings for photolithography
FR2940806B1 (fr) * 2009-01-05 2011-04-08 Commissariat Energie Atomique Procede de solidification de semi-conducteur avec ajout de charges de semi-conducteur dope au cours de la cristallisation
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US9051659B2 (en) 2010-09-03 2015-06-09 Gtat Ip Holding Silicon single crystal doped with gallium, indium, or aluminum
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
WO2016179022A1 (en) * 2015-05-01 2016-11-10 Sunedison, Inc. Methods for producing single crystal ingots doped with volatile dopants
US20180291524A1 (en) * 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants
WO2021031140A1 (zh) * 2019-08-21 2021-02-25 眉山博雅新材料有限公司 开放式温场
CN112048758A (zh) * 2020-09-17 2020-12-08 乐山新天源太阳能科技有限公司 连续直拉单晶棒工艺

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
DE2152801A1 (de) * 1970-11-09 1972-05-10 Little Inc A Verfahren und Ofen zum Ziehen von Kristallen gleichförmiger Zusammensetzung nach dem Czochralski-Verfahren
US4134785A (en) * 1977-04-13 1979-01-16 Western Electric Company, Inc. Real-time analysis and control of melt-chemistry in crystal growing operations
US4200621A (en) * 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
US4594173A (en) * 1984-04-19 1986-06-10 Westinghouse Electric Corp. Indium doped gallium arsenide crystals and method of preparation
JPS62256793A (ja) * 1986-05-01 1987-11-09 Shin Etsu Handotai Co Ltd 化合物半導体単結晶の引上方法
JPS6379790A (ja) * 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置

Also Published As

Publication number Publication date
DE68908872T2 (de) 1994-02-10
US4980015A (en) 1990-12-25
EP0388503A1 (de) 1990-09-26
KR940009938B1 (ko) 1994-10-19
KR900012849A (ko) 1990-09-01
EP0388503B1 (de) 1993-09-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: JAPAN SUPER QUARTZ CORP., AKITA, JP