DE68905446T2 - Superlumineszierende Diode. - Google Patents
Superlumineszierende Diode.Info
- Publication number
- DE68905446T2 DE68905446T2 DE89122103T DE68905446T DE68905446T2 DE 68905446 T2 DE68905446 T2 DE 68905446T2 DE 89122103 T DE89122103 T DE 89122103T DE 68905446 T DE68905446 T DE 68905446T DE 68905446 T2 DE68905446 T2 DE 68905446T2
- Authority
- DE
- Germany
- Prior art keywords
- superluminescent diode
- superluminescent
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63303544A JPH02150079A (ja) | 1988-11-30 | 1988-11-30 | スーパールミネッセントダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68905446D1 DE68905446D1 (de) | 1993-04-22 |
DE68905446T2 true DE68905446T2 (de) | 1993-10-21 |
Family
ID=17922280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89122103T Expired - Fee Related DE68905446T2 (de) | 1988-11-30 | 1989-11-30 | Superlumineszierende Diode. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5034955A (de) |
EP (1) | EP0372394B1 (de) |
JP (1) | JPH02150079A (de) |
DE (1) | DE68905446T2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0645642A (ja) * | 1992-07-22 | 1994-02-18 | Mitsubishi Precision Co Ltd | スーパールミネッセントダイオード及びその製造方法 |
JPH06314854A (ja) * | 1993-04-30 | 1994-11-08 | Fujitsu Ltd | 面型発光素子とその製造方法 |
US5608234A (en) * | 1994-11-14 | 1997-03-04 | The Whitaker Corporation | Semi-insulating edge emitting light emitting diode |
EP0712169A1 (de) * | 1994-11-14 | 1996-05-15 | The Whitaker Corporation | Randemittierende Leuchtdiode mit semi-isolierender Schicht |
JP3909811B2 (ja) * | 2001-06-12 | 2007-04-25 | パイオニア株式会社 | 窒化物半導体素子及びその製造方法 |
KR20040017510A (ko) * | 2002-08-21 | 2004-02-27 | 이상섭 | 제거식 그라운드 앵커의 피복내 그리스 제거방법 및 그 장치 |
KR100670830B1 (ko) * | 2005-12-12 | 2007-01-19 | 한국전자통신연구원 | 수퍼루미네슨트 다이오드 및 그 제조 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4888624A (en) * | 1984-06-15 | 1989-12-19 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement |
JPS62106673A (ja) * | 1985-11-01 | 1987-05-18 | Fujitsu Ltd | 半導体発光装置 |
JPS62142376A (ja) * | 1985-12-17 | 1987-06-25 | Fujitsu Ltd | 非線形補償光源装置 |
JPH06101586B2 (ja) * | 1986-10-31 | 1994-12-12 | 富士通株式会社 | 発光ダイオ−ド |
JPS63228768A (ja) * | 1987-03-18 | 1988-09-22 | Fujitsu Ltd | 半導体発光装置 |
US4821276A (en) * | 1987-04-20 | 1989-04-11 | General Electric Company | Super-luminescent diode |
US4821277A (en) * | 1987-04-20 | 1989-04-11 | General Electric Company | Super-luminescent diode |
JPH0682863B2 (ja) * | 1987-12-02 | 1994-10-19 | 日本電信電話株式会社 | 発光ダイオード |
US4872180A (en) * | 1989-06-16 | 1989-10-03 | Gte Laboratories Incorporated | Method for reducing facet reflectivities of semiconductor light sources and device thereof |
-
1988
- 1988-11-30 JP JP63303544A patent/JPH02150079A/ja active Pending
-
1989
- 1989-11-22 US US07/441,039 patent/US5034955A/en not_active Expired - Lifetime
- 1989-11-30 EP EP89122103A patent/EP0372394B1/de not_active Expired - Lifetime
- 1989-11-30 DE DE89122103T patent/DE68905446T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH02150079A (ja) | 1990-06-08 |
DE68905446D1 (de) | 1993-04-22 |
US5034955A (en) | 1991-07-23 |
EP0372394A1 (de) | 1990-06-13 |
EP0372394B1 (de) | 1993-03-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |