DE60333909D1 - Treiber mit niedrigem stromverbrauch mit energiewiederherstellung - Google Patents

Treiber mit niedrigem stromverbrauch mit energiewiederherstellung

Info

Publication number
DE60333909D1
DE60333909D1 DE60333909T DE60333909T DE60333909D1 DE 60333909 D1 DE60333909 D1 DE 60333909D1 DE 60333909 T DE60333909 T DE 60333909T DE 60333909 T DE60333909 T DE 60333909T DE 60333909 D1 DE60333909 D1 DE 60333909D1
Authority
DE
Germany
Prior art keywords
pull
clock signal
driver
power consumption
low power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60333909T
Other languages
English (en)
Inventor
Joohee Kim
Marios C Papaefthymiou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Michigan
Original Assignee
University of Michigan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Michigan filed Critical University of Michigan
Application granted granted Critical
Publication of DE60333909D1 publication Critical patent/DE60333909D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Steering Control In Accordance With Driving Conditions (AREA)
  • Control Of Eletrric Generators (AREA)
  • Control Of Stepping Motors (AREA)
  • Dram (AREA)
  • Devices For Checking Fares Or Tickets At Control Points (AREA)
  • Transmitters (AREA)
DE60333909T 2002-04-04 2003-04-04 Treiber mit niedrigem stromverbrauch mit energiewiederherstellung Expired - Lifetime DE60333909D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37009102P 2002-04-04 2002-04-04
US10/406,367 US6879190B2 (en) 2002-04-04 2003-04-03 Low-power driver with energy recovery
PCT/US2003/010436 WO2003088459A2 (en) 2002-04-04 2003-04-04 Low-power driver with energy recovery

Publications (1)

Publication Number Publication Date
DE60333909D1 true DE60333909D1 (de) 2010-10-07

Family

ID=29254398

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60333909T Expired - Lifetime DE60333909D1 (de) 2002-04-04 2003-04-04 Treiber mit niedrigem stromverbrauch mit energiewiederherstellung

Country Status (8)

Country Link
US (1) US6879190B2 (de)
EP (1) EP1490876B1 (de)
JP (1) JP4926375B2 (de)
KR (1) KR100976645B1 (de)
AT (1) ATE479187T1 (de)
AU (1) AU2003228443A1 (de)
DE (1) DE60333909D1 (de)
WO (1) WO2003088459A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100598094B1 (ko) * 2003-04-03 2006-07-07 삼성전자주식회사 데이타 전송 시스템
KR101034776B1 (ko) * 2004-01-19 2011-05-17 삼성전자주식회사 증폭기와, 이를 갖는 데이터 드라이버 및 표시 장치
KR100744640B1 (ko) * 2005-11-02 2007-08-01 주식회사 하이닉스반도체 클럭 드라이버
CN100431054C (zh) * 2006-07-06 2008-11-05 复旦大学 一种能量恢复结构的只读存储器存储单元电路
US7973565B2 (en) * 2007-05-23 2011-07-05 Cyclos Semiconductor, Inc. Resonant clock and interconnect architecture for digital devices with multiple clock networks
US7741873B2 (en) * 2008-04-21 2010-06-22 Micron Technology, Inc. Receiver circuitry for receiving reduced swing signals from a channel
US8159270B2 (en) 2008-10-28 2012-04-17 Micron Technology, Inc. Circuitry and methods minimizing output switching noise through split-level signaling and bus division enabled by a third power supply
US7948293B1 (en) * 2009-01-27 2011-05-24 Xilinx, Inc. Synchronizing transitions between voltage sources used to provide a supply voltage
KR20120095908A (ko) * 2009-10-12 2012-08-29 사이클로스 세미컨덕터, 인크. 프로그램가능한 드라이버들을 가지는 공진 클럭 분배 네트워크 아키텍처
US9805681B2 (en) * 2015-03-10 2017-10-31 Apple Inc. Fast gate driver circuit
CN107851453B (zh) 2015-07-27 2021-10-15 电力荡半导体有限公司 采用谐振驱动电路的低功耗sram位单元
US9612614B2 (en) 2015-07-31 2017-04-04 International Business Machines Corporation Pulse-drive resonant clock with on-the-fly mode change
US9634654B2 (en) 2015-08-07 2017-04-25 International Business Machines Corporation Sequenced pulse-width adjustment in a resonant clocking circuit
US9568548B1 (en) 2015-10-14 2017-02-14 International Business Machines Corporation Measurement of signal delays in microprocessor integrated circuits with sub-picosecond accuracy using frequency stepping
US11212467B2 (en) * 2019-07-18 2021-12-28 Omnivision Technologies, Inc. Sample and hold switch driver circuitry with slope control
US11784648B2 (en) 2021-06-02 2023-10-10 Power Down Semiconductor, Inc. Low power interconnect using resonant drive circuitry

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353025A (en) * 1980-12-08 1982-10-05 Hybrinetics, Inc. Phase controlled voltage reducing circuit having line voltage compensation
KR860001485B1 (ko) * 1982-09-13 1986-09-26 산요덴기 가부시기가이샤 애널로그스위치회로
JPS6412615A (en) * 1987-07-06 1989-01-17 Nec Corp Holding circuit
US5111072A (en) * 1990-08-29 1992-05-05 Ncr Corporation Sample-and-hold switch with low on resistance and reduced charge injection
JPH0595266A (ja) * 1991-09-30 1993-04-16 Rohm Co Ltd 伝送ゲート
US5430408A (en) * 1993-03-08 1995-07-04 Texas Instruments Incorporated Transmission gate circuit
US5537067A (en) * 1994-03-11 1996-07-16 Texas Instruments Incorporated Signal driver circuit operable to control signal rise and fall times
US5489866A (en) * 1994-04-19 1996-02-06 Xilinx, Inc. High speed and low noise margin schmitt trigger with controllable trip point
US5473526A (en) 1994-04-22 1995-12-05 University Of Southern California System and method for power-efficient charging and discharging of a capacitive load from a single source
US5517145A (en) 1994-10-31 1996-05-14 International Business Machines Corporation CMOS toggle flip-flop using adiabatic switching
US5506528A (en) * 1994-10-31 1996-04-09 International Business Machines Corporation High speed off-chip CMOS receiver
US5506520A (en) 1995-01-11 1996-04-09 International Business Machines Corporation Energy conserving clock pulse generating circuits
US5526319A (en) 1995-01-31 1996-06-11 International Business Machines Corporation Memory with adiabatically switched bit lines
US5559478A (en) 1995-07-17 1996-09-24 University Of Southern California Highly efficient, complementary, resonant pulse generation
US5760620A (en) * 1996-04-22 1998-06-02 Quantum Effect Design, Inc. CMOS limited-voltage-swing clock driver for reduced power driving high-frequency clocks
JP3437719B2 (ja) * 1996-07-24 2003-08-18 株式会社東芝 アナログ・スイッチ回路
JP3579205B2 (ja) * 1996-08-06 2004-10-20 株式会社ルネサステクノロジ 半導体記憶装置、半導体装置、データ処理装置及びコンピュータシステム
US5896054A (en) * 1996-12-05 1999-04-20 Motorola, Inc. Clock driver
US5838203A (en) 1996-12-06 1998-11-17 Intel Corporation Method and apparatus for generating waveforms using adiabatic circuitry
JP3957357B2 (ja) * 1997-04-03 2007-08-15 シャープ株式会社 半導体記憶装置
JP3258930B2 (ja) * 1997-04-24 2002-02-18 東芝マイクロエレクトロニクス株式会社 トランスミッション・ゲート
JP3506222B2 (ja) * 1999-02-16 2004-03-15 シャープ株式会社 論理回路及び画像表示装置
WO2000014708A2 (en) * 1998-09-03 2000-03-16 University Of Southern California Power-efficient, pulsed driving of liquid crystal display capacitive loads to controllable voltage levels
US6052019A (en) * 1998-10-29 2000-04-18 Pericom Semiconductor Corp. Undershoot-isolating MOS bus switch
US6177819B1 (en) * 1999-04-01 2001-01-23 Xilinx, Inc. Integrated circuit driver with adjustable trip point
US6144610A (en) * 1999-04-20 2000-11-07 Winbond Electronics Corporation Distributed circuits to turn off word lines in a memory array
US6160422A (en) * 1999-05-03 2000-12-12 Silicon Integrated Systems Corp. Power saving clock buffer

Also Published As

Publication number Publication date
AU2003228443A1 (en) 2003-10-27
JP4926375B2 (ja) 2012-05-09
KR20050002928A (ko) 2005-01-10
JP2005522157A (ja) 2005-07-21
ATE479187T1 (de) 2010-09-15
KR100976645B1 (ko) 2010-08-18
EP1490876A4 (de) 2007-05-02
WO2003088459A3 (en) 2004-01-22
US6879190B2 (en) 2005-04-12
AU2003228443A8 (en) 2003-10-27
WO2003088459A2 (en) 2003-10-23
EP1490876A2 (de) 2004-12-29
US20030201803A1 (en) 2003-10-30
EP1490876B1 (de) 2010-08-25

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