DE60325458D1 - Elektronisches Bauteil mit Übergang und mit dem Bauteil integriertes Leistungs-Bauelement - Google Patents
Elektronisches Bauteil mit Übergang und mit dem Bauteil integriertes Leistungs-BauelementInfo
- Publication number
- DE60325458D1 DE60325458D1 DE60325458T DE60325458T DE60325458D1 DE 60325458 D1 DE60325458 D1 DE 60325458D1 DE 60325458 T DE60325458 T DE 60325458T DE 60325458 T DE60325458 T DE 60325458T DE 60325458 D1 DE60325458 D1 DE 60325458D1
- Authority
- DE
- Germany
- Prior art keywords
- component
- transition
- integrated
- power device
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000007704 transition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03425242A EP1469523B1 (de) | 2003-04-18 | 2003-04-18 | Elektronisches Bauteil mit Übergang und mit dem Bauteil integriertes Leistungs-Bauelement |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60325458D1 true DE60325458D1 (de) | 2009-02-05 |
Family
ID=32893035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60325458T Expired - Lifetime DE60325458D1 (de) | 2003-04-18 | 2003-04-18 | Elektronisches Bauteil mit Übergang und mit dem Bauteil integriertes Leistungs-Bauelement |
Country Status (4)
Country | Link |
---|---|
US (1) | US7091559B2 (de) |
EP (1) | EP1469523B1 (de) |
JP (1) | JP2004356622A (de) |
DE (1) | DE60325458D1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3679097B2 (ja) | 2002-05-31 | 2005-08-03 | 株式会社光波 | 発光素子 |
US7511357B2 (en) * | 2007-04-20 | 2009-03-31 | Force-Mos Technology Corporation | Trenched MOSFETs with improved gate-drain (GD) clamp diodes |
US8085009B2 (en) | 2007-08-13 | 2011-12-27 | The Powerwise Group, Inc. | IGBT/FET-based energy savings device for reducing a predetermined amount of voltage using pulse width modulation |
US8619443B2 (en) | 2010-09-29 | 2013-12-31 | The Powerwise Group, Inc. | System and method to boost voltage |
US8120307B2 (en) | 2007-08-24 | 2012-02-21 | The Powerwise Group, Inc. | System and method for providing constant loading in AC power applications |
US8810190B2 (en) | 2007-09-14 | 2014-08-19 | The Powerwise Group, Inc. | Motor controller system and method for maximizing energy savings |
US8698447B2 (en) | 2007-09-14 | 2014-04-15 | The Powerwise Group, Inc. | Energy saving system and method for devices with rotating or reciprocating masses |
US8004255B2 (en) | 2008-08-07 | 2011-08-23 | The Powerwise Group, Inc. | Power supply for IGBT/FET drivers |
US8164162B2 (en) * | 2009-06-11 | 2012-04-24 | Force Mos Technology Co., Ltd. | Power semiconductor devices integrated with clamp diodes sharing same gate metal pad |
EP2475888B1 (de) | 2009-09-08 | 2019-04-24 | The Powerwise Group, Inc. | Stromsparsystem und -verfahren für vorrichtungen mit rotierenden oder hin und her bewegten massen |
US8698446B2 (en) | 2009-09-08 | 2014-04-15 | The Powerwise Group, Inc. | Method to save energy for devices with rotating or reciprocating masses |
JP5720788B2 (ja) * | 2011-07-22 | 2015-05-20 | 富士電機株式会社 | 超接合半導体装置 |
JP6512025B2 (ja) | 2015-08-11 | 2019-05-15 | 富士電機株式会社 | 半導体素子及び半導体素子の製造方法 |
CN106558580B (zh) * | 2015-09-30 | 2019-12-10 | 无锡华润上华科技有限公司 | 具有静电释放保护结构的半导体器件 |
JP2018067570A (ja) * | 2016-10-17 | 2018-04-26 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3171042A (en) * | 1961-09-08 | 1965-02-23 | Bendix Corp | Device with combination of unipolar means and tunnel diode means |
JPS5621357A (en) * | 1979-07-27 | 1981-02-27 | Pioneer Electronic Corp | Integrated circuit device |
JPS62199051A (ja) * | 1986-02-27 | 1987-09-02 | Sumitomo Electric Ind Ltd | 半導体装置の入力保護回路 |
JPS6350070A (ja) * | 1986-08-19 | 1988-03-02 | Matsushita Electronics Corp | 縦型mos電界効果トランジスタ |
JPH04369863A (ja) * | 1991-06-19 | 1992-12-22 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JPH06252349A (ja) * | 1993-02-23 | 1994-09-09 | Seiko Epson Corp | 半導体装置及び半導体装置の製造方法 |
JPH06342878A (ja) * | 1993-04-06 | 1994-12-13 | Fuji Electric Co Ltd | 半導体装置 |
JP2982785B2 (ja) * | 1998-04-03 | 1999-11-29 | 富士電機株式会社 | デプレッション型mos半導体素子およびmosパワーic |
US6269011B1 (en) * | 1999-02-14 | 2001-07-31 | Yazaki Corporation | Power supply system having semiconductor active fuse |
JP2001085682A (ja) * | 1999-09-10 | 2001-03-30 | Toyota Autom Loom Works Ltd | パワーmosトランジスタ |
JP4917709B2 (ja) * | 2000-03-06 | 2012-04-18 | ローム株式会社 | 半導体装置 |
JP2002246598A (ja) * | 2001-02-15 | 2002-08-30 | Nec Yamagata Ltd | 半導体装置及びその製造方法 |
-
2003
- 2003-04-18 DE DE60325458T patent/DE60325458D1/de not_active Expired - Lifetime
- 2003-04-18 EP EP03425242A patent/EP1469523B1/de not_active Expired - Lifetime
-
2004
- 2004-03-31 JP JP2004106240A patent/JP2004356622A/ja active Pending
- 2004-04-01 US US10/817,742 patent/US7091559B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20040262684A1 (en) | 2004-12-30 |
JP2004356622A (ja) | 2004-12-16 |
EP1469523A1 (de) | 2004-10-20 |
US7091559B2 (en) | 2006-08-15 |
EP1469523B1 (de) | 2008-12-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |