DE60317349D1 - Detektor für elektromagnetische strahlung mit integriertem gehäuse, der zwei überlappte detektoren enthält - Google Patents

Detektor für elektromagnetische strahlung mit integriertem gehäuse, der zwei überlappte detektoren enthält

Info

Publication number
DE60317349D1
DE60317349D1 DE60317349T DE60317349T DE60317349D1 DE 60317349 D1 DE60317349 D1 DE 60317349D1 DE 60317349 T DE60317349 T DE 60317349T DE 60317349 T DE60317349 T DE 60317349T DE 60317349 D1 DE60317349 D1 DE 60317349D1
Authority
DE
Germany
Prior art keywords
detectors
overlapped
detector
electromagnetic radiation
housing containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60317349T
Other languages
English (en)
Other versions
DE60317349T2 (de
Inventor
Jean-Louis Ouvrier-Buffet
Damien Morel
Nicolas Massoni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE60317349D1 publication Critical patent/DE60317349D1/de
Application granted granted Critical
Publication of DE60317349T2 publication Critical patent/DE60317349T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14669—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Radiation Pyrometers (AREA)
DE60317349T 2002-09-16 2003-09-11 Detektor für elektromagnetische strahlung mit integriertem gehäuse, der zwei überlappte detektoren enthält Expired - Lifetime DE60317349T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0211457A FR2844635B1 (fr) 2002-09-16 2002-09-16 Dispositif detecteur de rayonnement electromagnetique avec boitier integre comportant deux detecteurs superposes
FR0211457 2002-09-16
PCT/FR2003/002696 WO2004025694A2 (fr) 2002-09-16 2003-09-11 Dispositif detecteur de rayonnement electromagnetique avec boitier integre comportant deux detecteurs superposes

Publications (2)

Publication Number Publication Date
DE60317349D1 true DE60317349D1 (de) 2007-12-20
DE60317349T2 DE60317349T2 (de) 2008-08-21

Family

ID=31897413

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60317349T Expired - Lifetime DE60317349T2 (de) 2002-09-16 2003-09-11 Detektor für elektromagnetische strahlung mit integriertem gehäuse, der zwei überlappte detektoren enthält

Country Status (6)

Country Link
US (1) US7205545B2 (de)
EP (1) EP1540739B1 (de)
JP (1) JP4597677B2 (de)
DE (1) DE60317349T2 (de)
FR (1) FR2844635B1 (de)
WO (1) WO2004025694A2 (de)

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FR2877492B1 (fr) * 2004-10-28 2006-12-08 Commissariat Energie Atomique Detecteur bolometrique a isolation thermique par constriction et dispositif de detection infrarouge mettant en oeuvre un tel detecteur bolometrique
US7391032B1 (en) * 2005-12-21 2008-06-24 Searete Llc Multi-stage waveform detector
US7649182B2 (en) * 2006-10-26 2010-01-19 Searete Llc Variable multi-stage waveform detector
US8207907B2 (en) * 2006-02-16 2012-06-26 The Invention Science Fund I Llc Variable metamaterial apparatus
US7427762B2 (en) * 2005-12-21 2008-09-23 Searete Llc Variable multi-stage waveform detector
JPWO2007129547A1 (ja) * 2006-05-10 2009-09-17 株式会社村田製作所 赤外線センサおよびその製造方法
US7629582B2 (en) * 2006-10-24 2009-12-08 Raytheon Company Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors
US9741901B2 (en) * 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
CA2680043A1 (en) * 2007-03-05 2008-09-12 Arokia Nathan Sensor pixels, arrays and array systems and methods therefor
DE102007024902B8 (de) * 2007-05-29 2010-12-30 Pyreos Ltd. Vorrichtung mit Membranstruktur zur Detektion von Wärmestrahlung, Verfahren zum Herstellen und Verwendung der Vorrichtung
WO2009008258A1 (ja) * 2007-07-09 2009-01-15 Murata Manufacturing Co., Ltd. センサ装置及びその製造方法
KR20100039171A (ko) * 2008-10-07 2010-04-15 삼성전자주식회사 가시광-적외선 복합 센서 및 그 제조 방법
US7910954B2 (en) * 2008-10-28 2011-03-22 Sony Ericsson Mobile Communications Ab Image sensor element and image sensor
US7842533B2 (en) 2009-01-07 2010-11-30 Robert Bosch Gmbh Electromagnetic radiation sensor and method of manufacture
JP5208871B2 (ja) * 2009-07-13 2013-06-12 浜松ホトニクス株式会社 光検出器
CN101713688B (zh) * 2009-12-11 2011-02-09 中国电子科技集团公司第十三研究所 一种mems非制冷双波段红外探测器及其制备方法
US9228902B2 (en) * 2010-07-08 2016-01-05 Cvg Management Corporation Infrared temperature measurement and stabilization thereof
US10782187B2 (en) * 2010-07-08 2020-09-22 Cvg Management Corporation Infrared temperature measurement and stabilization thereof
US8471204B2 (en) * 2010-12-23 2013-06-25 Flir Systems, Inc. Monolithic electro-optical polymer infrared focal plane array
KR101348589B1 (ko) * 2012-02-16 2014-01-08 주식회사 지멤스 일체형 센서모듈
KR101336916B1 (ko) * 2012-03-14 2013-12-04 주식회사 지멤스 일체형 듀얼 센서
US9146157B1 (en) * 2012-03-22 2015-09-29 Hrl Laboratories, Llc Dual band SWIR/MWIR and MWIR1/MWIR2 infrared detectors
JP6004393B2 (ja) * 2012-05-18 2016-10-05 国立研究開発法人日本原子力研究開発機構 垂直面線量率マップ作成装置
US11063163B1 (en) 2013-03-15 2021-07-13 Hrl Laboratories, Llc Infrared photo-detector with low turn-on voltage
KR101530979B1 (ko) * 2013-09-23 2015-07-07 삼원테크 주식회사 태양광 추적 센서 유닛
DE102014201950A1 (de) * 2014-02-04 2015-08-06 Robert Bosch Gmbh Optischer Sensor sowie Verfahren und Vorrichtung zum Herstellen eines optischen Sensors
WO2015159512A1 (ja) 2014-04-18 2015-10-22 パナソニックＩｐマネジメント株式会社 受光デバイス
US9823121B2 (en) * 2014-10-14 2017-11-21 Kla-Tencor Corporation Method and system for measuring radiation and temperature exposure of wafers along a fabrication process line
CN105206637B (zh) * 2015-08-31 2018-06-22 上海集成电路研发中心有限公司 具有台阶支撑的混合成像探测器像元结构及其制备方法
CN105206635B (zh) * 2015-08-31 2018-05-29 上海集成电路研发中心有限公司 增强透射性的双层混合成像探测器像元结构及其制备方法
CN105161507B (zh) * 2015-08-31 2018-05-29 上海集成电路研发中心有限公司 双层可见光红外混合成像探测器像元结构及其制备方法
US10585210B2 (en) 2015-10-06 2020-03-10 Arable Labs, Inc. Apparatus for radiometric correction and orthorectification of aerial imagery
FR3046879B1 (fr) * 2016-01-20 2022-07-15 Ulis Procede de fabrication d'un detecteur de rayonnement electromagnetique a micro-encapsulation
WO2018009574A1 (en) * 2016-07-05 2018-01-11 Arable Labs, Inc. Radiation measuring systems and methods thereof
GB201816609D0 (en) * 2018-10-11 2018-11-28 Emberion Oy Multispectral photodetector array
JP6711985B1 (ja) 2019-07-31 2020-06-17 株式会社京都セミコンダクター 受光素子ユニット
CN111584530B (zh) * 2020-05-19 2023-09-05 上海集成电路研发中心有限公司 一种混合成像探测器结构
CN113363275B (zh) * 2021-08-10 2021-11-16 西安中科立德红外科技有限公司 混合成像结构

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FR2781927B1 (fr) * 1998-07-28 2001-10-05 Commissariat Energie Atomique Dispositif de detection de rayonnements multispectraux infrarouge/visible

Also Published As

Publication number Publication date
US7205545B2 (en) 2007-04-17
US20060043297A1 (en) 2006-03-02
EP1540739B1 (de) 2007-11-07
WO2004025694A2 (fr) 2004-03-25
JP4597677B2 (ja) 2010-12-15
WO2004025694A8 (fr) 2005-03-31
WO2004025694A3 (fr) 2004-04-22
DE60317349T2 (de) 2008-08-21
EP1540739A2 (de) 2005-06-15
FR2844635A1 (fr) 2004-03-19
FR2844635B1 (fr) 2005-08-19
JP2005539218A (ja) 2005-12-22

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Legal Events

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