DE60313249D1 - DFB - Halbleiterlaser zur Erzeugung eines Strahls einer einzigen Wellenlänge - Google Patents

DFB - Halbleiterlaser zur Erzeugung eines Strahls einer einzigen Wellenlänge

Info

Publication number
DE60313249D1
DE60313249D1 DE60313249T DE60313249T DE60313249D1 DE 60313249 D1 DE60313249 D1 DE 60313249D1 DE 60313249 T DE60313249 T DE 60313249T DE 60313249 T DE60313249 T DE 60313249T DE 60313249 D1 DE60313249 D1 DE 60313249D1
Authority
DE
Germany
Prior art keywords
dfb
generating
semiconductor laser
single wavelength
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60313249T
Other languages
English (en)
Other versions
DE60313249T2 (de
Inventor
Hiroshi Mori
Tomoyuki Kikugawa
Yoshio Takahashi
Motoaki Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anritsu Corp
Original Assignee
Anritsu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002188531A external-priority patent/JP3773880B2/ja
Priority claimed from JP2002188530A external-priority patent/JP3720794B2/ja
Application filed by Anritsu Corp filed Critical Anritsu Corp
Publication of DE60313249D1 publication Critical patent/DE60313249D1/de
Application granted granted Critical
Publication of DE60313249T2 publication Critical patent/DE60313249T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60313249T 2002-06-27 2003-06-17 DFB - Halbleiterlaser zur Erzeugung eines Strahls einer einzigen Wellenlänge Expired - Lifetime DE60313249T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002188530 2002-06-27
JP2002188531A JP3773880B2 (ja) 2002-06-27 2002-06-27 分布帰還型半導体レーザ
JP2002188531 2002-06-27
JP2002188530A JP3720794B2 (ja) 2002-06-27 2002-06-27 分布帰還型半導体レーザ

Publications (2)

Publication Number Publication Date
DE60313249D1 true DE60313249D1 (de) 2007-05-31
DE60313249T2 DE60313249T2 (de) 2007-12-20

Family

ID=29718453

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60313249T Expired - Lifetime DE60313249T2 (de) 2002-06-27 2003-06-17 DFB - Halbleiterlaser zur Erzeugung eines Strahls einer einzigen Wellenlänge

Country Status (3)

Country Link
US (1) US7065123B2 (de)
EP (2) EP1376789B1 (de)
DE (1) DE60313249T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2909491B1 (fr) * 2006-12-05 2010-04-23 Commissariat Energie Atomique Dispositif laser a source laser et guide d'onde couples
DE102008054217A1 (de) * 2008-10-31 2010-05-06 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
KR20130003913A (ko) * 2011-07-01 2013-01-09 한국전자통신연구원 비대칭 결합계수를 갖는 분포 궤환형 레이저 다이오드 및 그것의 제조 방법
CN102377109B (zh) * 2011-11-11 2012-12-12 中国科学院半导体研究所 抑制空间烧孔效应的分布反馈激光器的制作方法
JP6598202B2 (ja) * 2014-10-30 2019-10-30 住友電工デバイス・イノベーション株式会社 半導体レーザの製造方法
WO2017001062A1 (de) * 2015-06-30 2017-01-05 Forschungsverbund Berlin E.V. Laserdiode mit verteilter rückkopplung und verfahren zur herstellung
JP2018060973A (ja) * 2016-10-07 2018-04-12 日本電信電話株式会社 半導体光集積素子およびこれを搭載した光送受信モジュール
US10756507B2 (en) * 2017-01-23 2020-08-25 Sumitomo Electric Industries, Ltd. Process of forming epitaxial substrate and semiconductor optical device
TWI710186B (zh) * 2017-10-17 2020-11-11 光環科技股份有限公司 分散式回饋雷射的結構與製法
US11374380B2 (en) * 2017-12-15 2022-06-28 Horiba, Ltd. Semiconductor laser

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60192378A (ja) 1984-03-13 1985-09-30 Res Dev Corp Of Japan 分布帰還形レーザの製造方法
JP2619057B2 (ja) 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
JPH04111383A (ja) 1990-08-30 1992-04-13 Nec Kansai Ltd 位相シフト分布帰還型レーザダイオード
JP2982422B2 (ja) * 1991-09-20 1999-11-22 三菱電機株式会社 半導体レーザおよびその製造方法
JPH08255954A (ja) 1995-03-17 1996-10-01 Mitsubishi Electric Corp 半導体レーザの構造及びその製造方法
JP3714430B2 (ja) * 1996-04-15 2005-11-09 シャープ株式会社 分布帰還型半導体レーザ装置
JP3700245B2 (ja) 1996-05-14 2005-09-28 株式会社日立製作所 位相シフト型分布帰還半導体レーザ
JPH09312437A (ja) 1996-05-24 1997-12-02 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP2000058961A (ja) 1998-08-11 2000-02-25 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
US6608855B1 (en) * 2002-05-31 2003-08-19 Applied Optoelectronics, Inc. Single-mode DBR laser with improved phase-shift section

Also Published As

Publication number Publication date
EP1376789B1 (de) 2007-04-18
EP1376789A2 (de) 2004-01-02
EP1596481A1 (de) 2005-11-16
US20040001522A1 (en) 2004-01-01
DE60313249T2 (de) 2007-12-20
EP1376789A3 (de) 2004-06-02
US7065123B2 (en) 2006-06-20

Similar Documents

Publication Publication Date Title
DE50304789D1 (de) Verfahren zur bestimmung der fokuslage eines laserstrahls
DE50005174D1 (de) Verfahren zur erzeugung definiert konischer löcher mittels eines laserstrahls
DE60303868D1 (de) Verfahren zur Herstellung eines Halbleiterlasers
ATA33998A (de) Lasersystem zur erzeugung ultrakurzer lichtimpulse
DE69900292T2 (de) Lasersystem und Verfahren zur Erzeugung einer schmalen spektralen Linienbreite mittels Kompensation der Wellenfrontkrümmung
DE60200857D1 (de) Erzeugung einer künstlichen Sprache
DE59808837D1 (de) Optische vorrichtung zum bohren mittels laserstrahls
DE60334110D1 (de) Verfahren zum regeln der mikrostruktur einer mittels laserbeschichtung hergestellten hartschicht
DE60310807D1 (de) Verfahren zur Produktion von Tröpfchentargets für eine Laser-Plasma extrem-uIltraviolett-Lichtquelle mit hoher Pulsrate
DE60313249D1 (de) DFB - Halbleiterlaser zur Erzeugung eines Strahls einer einzigen Wellenlänge
DE50014719D1 (de) Verfahren zur Erzeugung einer Intensitätsverteilung über einen Arbeitslaserstrahl sowie Vorrichtung hierzu
DE10084665T1 (de) Vorrichtung zur Online-Steuerung der Ausgangsleistung eines Vakuum-UV-Lasers
DE29822090U1 (de) Laser zur Erzeugung schmalbandiger Strahlung
DE50106828D1 (de) Verfahren zur glättung der oberfläche einer gasturbinenschaufel
DE60336956D1 (de) Laserstrahlmaschine
FI20020968A0 (fi) Menetelmä ja laserlaite suuren optisen tehotiheyden tuottamiseksi
DE69807429D1 (de) Vorrichtung zur Steuerung der Wellenlänge einer Laserdiode
DE50113629D1 (de) Verfahren zur Herstellung einer Turbinenschaufel
SG133566A1 (en) Method of forming via hole using laser beam
DE50106385D1 (de) Verfahren zur Herstellung einer Turbinenschaufel
DE112004002731D2 (de) Vorrichtung zur Oberflächenbearbeitung einer Zylinderinnenfläche mit einem Laserstrahl
ATE278050T1 (de) Verfahren zur herstellung einer verdampfungsquelle
DE60311844D1 (de) Hochleistungs-halbleiterlaserdiode und verfahren zur herstellung einer solchen diode
DE60200532D1 (de) System zur Kontrolle der Qualität einer Laserschweissung
DE502004006221D1 (de) Hochrepetierendes lasersystem zur erzeugung von ultrakurzen pulsen nach dem prinzip der puls-auskopplung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition