DE60308568D1 - Magnetisches Joch in MRAM zur Reduzierung des Programmierungsleistungsverbrauchs und Herstellungsverfahren - Google Patents

Magnetisches Joch in MRAM zur Reduzierung des Programmierungsleistungsverbrauchs und Herstellungsverfahren

Info

Publication number
DE60308568D1
DE60308568D1 DE60308568T DE60308568T DE60308568D1 DE 60308568 D1 DE60308568 D1 DE 60308568D1 DE 60308568 T DE60308568 T DE 60308568T DE 60308568 T DE60308568 T DE 60308568T DE 60308568 D1 DE60308568 D1 DE 60308568D1
Authority
DE
Germany
Prior art keywords
mram
power consumption
manufacturing process
magnetic yoke
programming power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60308568T
Other languages
English (en)
Other versions
DE60308568T2 (de
Inventor
Wei Pan
Sheng Teng Hsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60308568D1 publication Critical patent/DE60308568D1/de
Publication of DE60308568T2 publication Critical patent/DE60308568T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
DE60308568T 2002-01-31 2003-01-30 Magnetisches Joch in MRAM zur Reduzierung des Programmierungsleistungsverbrauchs und Herstellungsverfahren Expired - Lifetime DE60308568T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61974 1979-07-30
US10/061,974 US6548849B1 (en) 2002-01-31 2002-01-31 Magnetic yoke structures in MRAM devices to reduce programming power consumption and a method to make the same

Publications (2)

Publication Number Publication Date
DE60308568D1 true DE60308568D1 (de) 2006-11-09
DE60308568T2 DE60308568T2 (de) 2007-05-31

Family

ID=22039401

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60308568T Expired - Lifetime DE60308568T2 (de) 2002-01-31 2003-01-30 Magnetisches Joch in MRAM zur Reduzierung des Programmierungsleistungsverbrauchs und Herstellungsverfahren

Country Status (7)

Country Link
US (2) US6548849B1 (de)
EP (1) EP1335382B1 (de)
JP (1) JP2003243633A (de)
KR (1) KR100544085B1 (de)
CN (1) CN100345214C (de)
DE (1) DE60308568T2 (de)
TW (1) TWI282162B (de)

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JP4053825B2 (ja) * 2002-01-22 2008-02-27 株式会社東芝 半導体集積回路装置
US6548849B1 (en) * 2002-01-31 2003-04-15 Sharp Laboratories Of America, Inc. Magnetic yoke structures in MRAM devices to reduce programming power consumption and a method to make the same
US6665205B2 (en) * 2002-02-20 2003-12-16 Hewlett-Packard Development Company, Lp. Shared global word line magnetic random access memory
JP3993522B2 (ja) * 2002-03-29 2007-10-17 株式会社東芝 磁気記憶装置の製造方法
US6873023B2 (en) * 2002-04-18 2005-03-29 Kabushiki Kaisha Toshiba Magnetic random access memory
JP3898556B2 (ja) * 2002-04-22 2007-03-28 株式会社東芝 磁気ランダムアクセスメモリ
US6707083B1 (en) * 2002-07-09 2004-03-16 Western Digital (Fremont), Inc. Magnetic tunneling junction with improved power consumption
JP3959335B2 (ja) * 2002-07-30 2007-08-15 株式会社東芝 磁気記憶装置及びその製造方法
US6680500B1 (en) * 2002-07-31 2004-01-20 Infineon Technologies Ag Insulating cap layer and conductive cap layer for semiconductor devices with magnetic material layers
US6770491B2 (en) * 2002-08-07 2004-08-03 Micron Technology, Inc. Magnetoresistive memory and method of manufacturing the same
US6914805B2 (en) * 2002-08-21 2005-07-05 Micron Technology, Inc. Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device
JP3906139B2 (ja) * 2002-10-16 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
JP3906145B2 (ja) * 2002-11-22 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
KR100615600B1 (ko) * 2004-08-09 2006-08-25 삼성전자주식회사 고집적 자기램 소자 및 그 제조방법
US6952364B2 (en) * 2003-03-03 2005-10-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction structures and methods of fabrication
JP2005044847A (ja) * 2003-07-23 2005-02-17 Tdk Corp 磁気抵抗効果素子、磁気記憶セルおよび磁気メモリデバイスならびにそれらの製造方法
US7078239B2 (en) * 2003-09-05 2006-07-18 Micron Technology, Inc. Integrated circuit structure formed by damascene process
JP4247085B2 (ja) * 2003-09-29 2009-04-02 株式会社東芝 磁気記憶装置およびその製造方法
US6900491B2 (en) * 2003-10-06 2005-05-31 Hewlett-Packard Development Company, L.P. Magnetic memory
US20050141148A1 (en) * 2003-12-02 2005-06-30 Kabushiki Kaisha Toshiba Magnetic memory
US6969895B2 (en) * 2003-12-10 2005-11-29 Headway Technologies, Inc. MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
JP2005260082A (ja) * 2004-03-12 2005-09-22 Toshiba Corp 磁気ランダムアクセスメモリ
JP2005260083A (ja) * 2004-03-12 2005-09-22 Toshiba Corp 磁気ランダムアクセスメモリ
US7211446B2 (en) * 2004-06-11 2007-05-01 International Business Machines Corporation Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
US7611912B2 (en) * 2004-06-30 2009-11-03 Headway Technologies, Inc. Underlayer for high performance magnetic tunneling junction MRAM
US7344896B2 (en) * 2004-07-26 2008-03-18 Infineon Technologies Ag Ferromagnetic liner for conductive lines of magnetic memory cells and methods of manufacturing thereof
US7321734B2 (en) * 2004-07-29 2008-01-22 Nortel Networks Limited Digital synthesis of readily compensated optical signals
KR100660539B1 (ko) 2004-07-29 2006-12-22 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
US7092284B2 (en) * 2004-08-20 2006-08-15 Infineon Technologies Ag MRAM with magnetic via for storage of information and field sensor
US7122386B1 (en) 2005-09-21 2006-10-17 Magic Technologies, Inc. Method of fabricating contact pad for magnetic random access memory
JP4444257B2 (ja) * 2006-09-08 2010-03-31 株式会社東芝 スピンｆｅｔ
US7456029B2 (en) * 2006-06-28 2008-11-25 Magic Technologies, Inc. Planar flux concentrator for MRAM devices
US20080232761A1 (en) * 2006-09-20 2008-09-25 Raveen Kumaran Methods of making optical waveguide structures by way of molecular beam epitaxy
WO2008047240A2 (en) * 2006-09-20 2008-04-24 Zecotek Medical Systems Inc. Methods of making optical waveguide structures by way of molecular beam epitaxy
US8542524B2 (en) * 2007-02-12 2013-09-24 Avalanche Technology, Inc. Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement
US7760542B2 (en) * 2008-04-21 2010-07-20 Seagate Technology Llc Spin-torque memory with unidirectional write scheme
US7974119B2 (en) 2008-07-10 2011-07-05 Seagate Technology Llc Transmission gate-based spin-transfer torque memory unit
US8233319B2 (en) * 2008-07-18 2012-07-31 Seagate Technology Llc Unipolar spin-transfer switching memory unit
US7933146B2 (en) * 2008-10-08 2011-04-26 Seagate Technology Llc Electronic devices utilizing spin torque transfer to flip magnetic orientation
US7933137B2 (en) * 2008-10-08 2011-04-26 Seagate Teachnology Llc Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures
US20100091546A1 (en) * 2008-10-15 2010-04-15 Seagate Technology Llc High density reconfigurable spin torque non-volatile memory
US9030867B2 (en) 2008-10-20 2015-05-12 Seagate Technology Llc Bipolar CMOS select device for resistive sense memory
US7936580B2 (en) 2008-10-20 2011-05-03 Seagate Technology Llc MRAM diode array and access method
US7936583B2 (en) 2008-10-30 2011-05-03 Seagate Technology Llc Variable resistive memory punchthrough access method
US7825478B2 (en) 2008-11-07 2010-11-02 Seagate Technology Llc Polarity dependent switch for resistive sense memory
US8178864B2 (en) 2008-11-18 2012-05-15 Seagate Technology Llc Asymmetric barrier diode
US8203869B2 (en) 2008-12-02 2012-06-19 Seagate Technology Llc Bit line charge accumulation sensing for resistive changing memory
US8159856B2 (en) 2009-07-07 2012-04-17 Seagate Technology Llc Bipolar select device for resistive sense memory
US8158964B2 (en) 2009-07-13 2012-04-17 Seagate Technology Llc Schottky diode switch and memory units containing the same
US8208290B2 (en) * 2009-08-26 2012-06-26 Qualcomm Incorporated System and method to manufacture magnetic random access memory
US8648426B2 (en) 2010-12-17 2014-02-11 Seagate Technology Llc Tunneling transistors
CN102938257B (zh) * 2011-08-15 2017-05-17 中芯国际集成电路制造(上海)有限公司 磁隧道结、其制作方法及含磁隧道结的存储单元
US9023699B2 (en) * 2012-12-20 2015-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Resistive random access memory (RRAM) structure and method of making the RRAM structure
KR102465539B1 (ko) 2015-09-18 2022-11-11 삼성전자주식회사 자기 터널 접합 구조체를 포함하는 반도체 소자 및 그의 형성 방법
US11309216B2 (en) 2020-01-27 2022-04-19 International Business Machines Corporation Large grain copper interconnect lines for MRAM
WO2022016313A1 (zh) * 2020-07-20 2022-01-27 中国科学院微电子研究所 缓存器件及制作方法

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US6872993B1 (en) * 1999-05-25 2005-03-29 Micron Technology, Inc. Thin film memory device having local and external magnetic shielding
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Also Published As

Publication number Publication date
US6709942B2 (en) 2004-03-23
KR20030066393A (ko) 2003-08-09
DE60308568T2 (de) 2007-05-31
EP1335382A1 (de) 2003-08-13
EP1335382B1 (de) 2006-09-27
JP2003243633A (ja) 2003-08-29
TWI282162B (en) 2007-06-01
TW200400622A (en) 2004-01-01
CN100345214C (zh) 2007-10-24
US20030168684A1 (en) 2003-09-11
US6548849B1 (en) 2003-04-15
CN1435841A (zh) 2003-08-13
KR100544085B1 (ko) 2006-01-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition