DE60301152D1 - Organoindiumverbindungen zur Verwendung in der chemischen Dampfphasenabscheidung - Google Patents
Organoindiumverbindungen zur Verwendung in der chemischen DampfphasenabscheidungInfo
- Publication number
- DE60301152D1 DE60301152D1 DE60301152T DE60301152T DE60301152D1 DE 60301152 D1 DE60301152 D1 DE 60301152D1 DE 60301152 T DE60301152 T DE 60301152T DE 60301152 T DE60301152 T DE 60301152T DE 60301152 D1 DE60301152 D1 DE 60301152D1
- Authority
- DE
- Germany
- Prior art keywords
- vapor deposition
- chemical vapor
- organoindium compounds
- organoindium
- compounds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 150000001875 compounds Chemical class 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34972602P | 2002-01-17 | 2002-01-17 | |
US349726P | 2002-01-17 | ||
US39516902P | 2002-07-11 | 2002-07-11 | |
US395169P | 2002-07-11 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE60301152D1 true DE60301152D1 (de) | 2005-09-08 |
DE60301152T2 DE60301152T2 (de) | 2006-02-16 |
DE60301152T8 DE60301152T8 (de) | 2006-04-27 |
Family
ID=27616747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60301152T Expired - Fee Related DE60301152T8 (de) | 2002-01-17 | 2003-01-16 | Organoindiumverbindungen zur Verwendung in der chemischen Dampfphasenabscheidung |
Country Status (7)
Country | Link |
---|---|
US (1) | US6680397B2 (de) |
EP (1) | EP1335415B1 (de) |
JP (1) | JP2003252878A (de) |
KR (1) | KR20030063174A (de) |
CN (1) | CN1445230A (de) |
DE (1) | DE60301152T8 (de) |
TW (1) | TW200302811A (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200619222A (en) * | 2004-09-02 | 2006-06-16 | Rohm & Haas Elect Mat | Method for making organometallic compounds |
JP5992133B2 (ja) * | 2004-10-01 | 2016-09-14 | メルク パテント ゲーエムベーハー | 有機半導体を含む電子デバイス |
EP2545973B1 (de) | 2011-07-13 | 2020-03-04 | Dow Global Technologies LLC | Reinigung organometallischer verbindungen durch stripping |
EP2559681B1 (de) | 2011-08-15 | 2016-06-22 | Dow Global Technologies LLC | Organometallische Verbindungszubereitung |
EP2559682B1 (de) | 2011-08-15 | 2016-08-03 | Rohm and Haas Electronic Materials LLC | Organometallische Verbindungszubereitung |
KR20130087354A (ko) * | 2012-01-27 | 2013-08-06 | 주식회사 유피케미칼 | 인듐을 포함한 산화막 및 이의 제조 방법 |
US9617284B2 (en) * | 2013-08-22 | 2017-04-11 | Umicore Ag & Co. Kg | Method for producing alkyl-indium compounds and the use thereof |
CN104498896A (zh) * | 2014-12-26 | 2015-04-08 | 电子科技大学 | 一种化合物半导体薄膜材料的制备方法 |
WO2017082541A1 (ko) * | 2015-11-11 | 2017-05-18 | 한국화학연구원 | 금속 전구체, 이의 제조방법, 및 이를 이용하여 박막을 형성하는 방법 |
EP3173507A1 (de) * | 2015-11-25 | 2017-05-31 | Umicore AG & Co. KG | Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen |
JP7240903B2 (ja) * | 2019-03-05 | 2023-03-16 | レール・リキード-ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | インジウム化合物および該インジウム化合物を用いたインジウム含有膜の成膜方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL271849A (de) * | 1960-12-23 | |||
US4720560A (en) * | 1984-10-25 | 1988-01-19 | Morton Thiokol, Inc. | Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition |
US4847399A (en) | 1987-01-23 | 1989-07-11 | Morton Thiokol, Inc. | Process for preparing or purifying Group III-A organometallic compounds |
US5502227A (en) * | 1993-07-27 | 1996-03-26 | Cvd, Incorporated | Liquid indium source |
GB9315771D0 (en) | 1993-07-30 | 1993-09-15 | Epichem Ltd | Method of depositing thin metal films |
US6204402B1 (en) | 1998-12-22 | 2001-03-20 | Advanced Technology Materials, Inc. | Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronics structures |
-
2003
- 2003-01-16 JP JP2003008068A patent/JP2003252878A/ja not_active Withdrawn
- 2003-01-16 DE DE60301152T patent/DE60301152T8/de not_active Expired - Fee Related
- 2003-01-16 EP EP03250285A patent/EP1335415B1/de not_active Expired - Lifetime
- 2003-01-17 TW TW092100960A patent/TW200302811A/zh unknown
- 2003-01-17 KR KR10-2003-0003193A patent/KR20030063174A/ko not_active Application Discontinuation
- 2003-01-17 US US10/346,585 patent/US6680397B2/en not_active Expired - Fee Related
- 2003-01-17 CN CN03128657A patent/CN1445230A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN1445230A (zh) | 2003-10-01 |
EP1335415A1 (de) | 2003-08-13 |
DE60301152T8 (de) | 2006-04-27 |
US6680397B2 (en) | 2004-01-20 |
KR20030063174A (ko) | 2003-07-28 |
JP2003252878A (ja) | 2003-09-10 |
US20030181745A1 (en) | 2003-09-25 |
TW200302811A (en) | 2003-08-16 |
DE60301152T2 (de) | 2006-02-16 |
EP1335415B1 (de) | 2005-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |