DE60235187D1 - Feldeffekttransistor-Halbleiterbauelement - Google Patents

Feldeffekttransistor-Halbleiterbauelement

Info

Publication number
DE60235187D1
DE60235187D1 DE60235187T DE60235187T DE60235187D1 DE 60235187 D1 DE60235187 D1 DE 60235187D1 DE 60235187 T DE60235187 T DE 60235187T DE 60235187 T DE60235187 T DE 60235187T DE 60235187 D1 DE60235187 D1 DE 60235187D1
Authority
DE
Germany
Prior art keywords
semiconductor device
field effect
effect transistor
transistor semiconductor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60235187T
Other languages
English (en)
Inventor
Raymond J Hueting
Jan W Slotboom
Petrus H Magnee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0221839A external-priority patent/GB0221839D0/en
Application filed by NXP BV filed Critical NXP BV
Priority claimed from PCT/IB2002/004759 external-priority patent/WO2003043089A1/en
Application granted granted Critical
Publication of DE60235187D1 publication Critical patent/DE60235187D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE60235187T 2001-11-16 2002-11-13 Feldeffekttransistor-Halbleiterbauelement Expired - Lifetime DE60235187D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GBGB0127479.4A GB0127479D0 (en) 2001-11-16 2001-11-16 Trench-gate semiconductor devices and the manufacture thereof
GBGB0130019.3A GB0130019D0 (en) 2001-11-16 2001-12-17 Trench-gate semiconductor devices and the manufacture thereof
GB0221839A GB0221839D0 (en) 2001-11-16 2002-09-20 A field effect transistor semiconductor device
PCT/IB2002/004759 WO2003043089A1 (en) 2001-11-16 2002-11-13 A field effect transistor semiconductor device

Publications (1)

Publication Number Publication Date
DE60235187D1 true DE60235187D1 (de) 2010-03-11

Family

ID=9925865

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60235187T Expired - Lifetime DE60235187D1 (de) 2001-11-16 2002-11-13 Feldeffekttransistor-Halbleiterbauelement

Country Status (4)

Country Link
KR (2) KR20040065560A (de)
AT (1) ATE456155T1 (de)
DE (1) DE60235187D1 (de)
GB (2) GB0127479D0 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184553A (ja) * 2005-12-06 2007-07-19 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5128100B2 (ja) * 2006-09-29 2013-01-23 三菱電機株式会社 電力用半導体装置
US7994573B2 (en) 2007-12-14 2011-08-09 Fairchild Semiconductor Corporation Structure and method for forming power devices with carbon-containing region
KR102053354B1 (ko) * 2013-07-17 2019-12-06 삼성전자주식회사 매립 채널 어레이를 갖는 반도체 소자 및 그 제조 방법

Also Published As

Publication number Publication date
KR20040065224A (ko) 2004-07-21
GB0127479D0 (en) 2002-01-09
KR20040065560A (ko) 2004-07-22
GB0130019D0 (en) 2002-02-06
ATE456155T1 (de) 2010-02-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition