DE60232177D1 - Schnelle ausgangsschaltung geeignet für geringe spannungen - Google Patents

Schnelle ausgangsschaltung geeignet für geringe spannungen

Info

Publication number
DE60232177D1
DE60232177D1 DE60232177T DE60232177T DE60232177D1 DE 60232177 D1 DE60232177 D1 DE 60232177D1 DE 60232177 T DE60232177 T DE 60232177T DE 60232177 T DE60232177 T DE 60232177T DE 60232177 D1 DE60232177 D1 DE 60232177D1
Authority
DE
Germany
Prior art keywords
output circuit
low voltages
circuit suitable
fast output
fast
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60232177T
Other languages
English (en)
Inventor
Hy V Nguyen
Gubo Huang
Andy T Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xilinx Inc
Original Assignee
Xilinx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xilinx Inc filed Critical Xilinx Inc
Application granted granted Critical
Publication of DE60232177D1 publication Critical patent/DE60232177D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
DE60232177T 2001-12-13 2002-12-06 Schnelle ausgangsschaltung geeignet für geringe spannungen Expired - Lifetime DE60232177D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/016,950 US6496044B1 (en) 2001-12-13 2001-12-13 High-speed output circuit with low voltage capability
PCT/US2002/039042 WO2003052934A1 (en) 2001-12-13 2002-12-06 High-speed output circuit with low voltage capability

Publications (1)

Publication Number Publication Date
DE60232177D1 true DE60232177D1 (de) 2009-06-10

Family

ID=21779893

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60232177T Expired - Lifetime DE60232177D1 (de) 2001-12-13 2002-12-06 Schnelle ausgangsschaltung geeignet für geringe spannungen

Country Status (6)

Country Link
US (1) US6496044B1 (de)
EP (1) EP1454414B1 (de)
JP (2) JP2005513851A (de)
CA (1) CA2468928C (de)
DE (1) DE60232177D1 (de)
WO (1) WO2003052934A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6496044B1 (en) * 2001-12-13 2002-12-17 Xilinx, Inc. High-speed output circuit with low voltage capability
US6784690B2 (en) * 2002-09-04 2004-08-31 Sun Microsystems, Inc. Circuit and method for dynamically controlling the impedance of an input/output driver
US6915503B1 (en) * 2002-12-17 2005-07-05 Xilinx, Inc. Methods of utilizing noise cores in PLD designs to facilitate future design modifications
JP3730963B2 (ja) * 2003-01-21 2006-01-05 沖電気工業株式会社 半導体集積回路
KR100566395B1 (ko) * 2003-12-17 2006-03-31 삼성전자주식회사 레벨 쉬프터 및 이를 이용한 레벨 쉬프팅 방법
US8018268B1 (en) * 2004-11-19 2011-09-13 Cypress Semiconductor Corporation Over-voltage tolerant input circuit
US9054694B2 (en) 2012-05-31 2015-06-09 Agency for Science, Technology Research Circuit arrangements and methods of operating the same
CN105981300B (zh) * 2015-01-13 2019-07-26 硅工厂股份有限公司 具有改善的时间响应特性的电平移位电路及其控制方法
US9966908B1 (en) 2017-06-02 2018-05-08 Xilinx, Inc. Circuit for and method of implementing a differential input receiver

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02188024A (ja) * 1989-01-17 1990-07-24 Nec Corp レベルシフト回路
US4978870A (en) * 1989-07-19 1990-12-18 Industrial Technology Research Institute CMOS digital level shifter circuit
US5051624A (en) * 1989-10-26 1991-09-24 Samsung Electronics Co., Ltd. High speed level converter to convert a TTL logic signal to a CMOS logic signal
US5144165A (en) * 1990-12-14 1992-09-01 International Business Machines Corporation CMOS off-chip driver circuits
JPH04268818A (ja) * 1991-02-22 1992-09-24 Nec Corp レベルシフト回路
JPH05122053A (ja) * 1991-10-30 1993-05-18 Fujitsu Ltd 半導体集積回路装置
JPH05304462A (ja) * 1992-04-24 1993-11-16 Mitsubishi Electric Corp レベル変換器
JP3070373B2 (ja) * 1993-12-27 2000-07-31 松下電器産業株式会社 レベルシフタ回路
JPH07302842A (ja) * 1994-05-02 1995-11-14 Hitachi Ltd 負荷駆動回路
JP3152867B2 (ja) * 1995-08-25 2001-04-03 株式会社東芝 レベルシフト半導体装置
JPH09139663A (ja) * 1995-11-14 1997-05-27 Fujitsu Ltd 出力回路
US5914617A (en) * 1996-12-23 1999-06-22 Lsi Logic Corporation Output driver for sub-micron CMOS
JP3680544B2 (ja) * 1997-04-03 2005-08-10 富士電機デバイステクノロジー株式会社 高耐圧パワーｉｃの出力段回路
JP3159137B2 (ja) * 1997-07-24 2001-04-23 日本電気株式会社 出力バッファ回路
JP3967002B2 (ja) * 1997-09-11 2007-08-29 株式会社ルネサステクノロジ 半導体集積回路
EP0913925B1 (de) * 1997-10-31 2004-10-06 STMicroelectronics S.r.l. Ausgangsstufe mit hoher Versorgungsspannung zum Steuern einer elektrischen Last
JP3518310B2 (ja) * 1998-02-04 2004-04-12 株式会社日立製作所 容量性負荷駆動回路
KR100301928B1 (ko) * 1998-09-24 2001-10-27 윤종용 반도체장치의레벨변환기
US6169421B1 (en) * 1999-05-03 2001-01-02 Applied Micro Circuits Corporation Complementary metal-oxide semiconductor buffer
US6496044B1 (en) * 2001-12-13 2002-12-17 Xilinx, Inc. High-speed output circuit with low voltage capability

Also Published As

Publication number Publication date
JP2005513851A (ja) 2005-05-12
CA2468928A1 (en) 2003-06-26
JP2009060676A (ja) 2009-03-19
EP1454414A1 (de) 2004-09-08
EP1454414B1 (de) 2009-04-29
US6496044B1 (en) 2002-12-17
WO2003052934A1 (en) 2003-06-26
JP5184326B2 (ja) 2013-04-17
CA2468928C (en) 2007-06-26

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Legal Events

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