DE60212024D1 - Strahlungsempfindliche Harzzusammensetzung, Rippe und Verfahren zur Herstellung derselben und Anzeigeelement - Google Patents

Strahlungsempfindliche Harzzusammensetzung, Rippe und Verfahren zur Herstellung derselben und Anzeigeelement

Info

Publication number
DE60212024D1
DE60212024D1 DE60212024T DE60212024T DE60212024D1 DE 60212024 D1 DE60212024 D1 DE 60212024D1 DE 60212024 T DE60212024 T DE 60212024T DE 60212024 T DE60212024 T DE 60212024T DE 60212024 D1 DE60212024 D1 DE 60212024D1
Authority
DE
Germany
Prior art keywords
rib
making
resin composition
same
display element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60212024T
Other languages
English (en)
Other versions
DE60212024T2 (de
Inventor
Shinji Shiraki
Masayoshi Suzuki
Hirofumi Sasaki
Kazuaki Niwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Application granted granted Critical
Publication of DE60212024D1 publication Critical patent/DE60212024D1/de
Publication of DE60212024T2 publication Critical patent/DE60212024T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/34—Heterocyclic compounds having nitrogen in the ring
    • C08K5/3467—Heterocyclic compounds having nitrogen in the ring having more than two nitrogen atoms in the ring
    • C08K5/3477—Six-membered rings
    • C08K5/3492—Triazines
    • C08K5/34926—Triazines also containing heterocyclic groups other than triazine groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Electroluminescent Light Sources (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Graft Or Block Polymers (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
DE60212024T 2001-09-07 2002-09-05 Strahlungsempfindliche Harzzusammensetzung, Rippe und Verfahren zur Herstellung derselben und Anzeigeelement Expired - Lifetime DE60212024T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001271609A JP2003082042A (ja) 2001-09-07 2001-09-07 隔壁形成用感放射線性樹脂組成物、隔壁、および表示素子。
JP2001271609 2001-09-07

Publications (2)

Publication Number Publication Date
DE60212024D1 true DE60212024D1 (de) 2006-07-20
DE60212024T2 DE60212024T2 (de) 2006-11-30

Family

ID=19097096

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60212024T Expired - Lifetime DE60212024T2 (de) 2001-09-07 2002-09-05 Strahlungsempfindliche Harzzusammensetzung, Rippe und Verfahren zur Herstellung derselben und Anzeigeelement

Country Status (6)

Country Link
US (1) US6852476B2 (de)
EP (1) EP1296186B1 (de)
JP (1) JP2003082042A (de)
KR (1) KR20030051178A (de)
DE (1) DE60212024T2 (de)
TW (1) TWI311577B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005037668A (ja) * 2003-07-14 2005-02-10 Jsr Corp パターン形成法および光学素子
JP4322097B2 (ja) 2003-11-14 2009-08-26 東京応化工業株式会社 Ｅｌ表示素子の隔壁、およびｅｌ表示素子
JP4734508B2 (ja) * 2004-06-21 2011-07-27 京セラ株式会社 Ｅｌディスプレイおよびその製造方法
US6992326B1 (en) 2004-08-03 2006-01-31 Dupont Displays, Inc. Electronic device and process for forming same
US7477013B2 (en) * 2004-08-12 2009-01-13 E. I. Du Pont De Nemours And Company Organic light emitting devices with distinct resistance regions
US7166860B2 (en) * 2004-12-30 2007-01-23 E. I. Du Pont De Nemours And Company Electronic device and process for forming same
KR101209046B1 (ko) 2005-07-27 2012-12-06 삼성디스플레이 주식회사 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법
JP4677871B2 (ja) * 2005-10-03 2011-04-27 Ｊｓｒ株式会社 感放射線性樹脂組成物ならびに層間絶縁膜およびマイクロレンズの形成
JP4895034B2 (ja) * 2006-05-24 2012-03-14 Ｊｓｒ株式会社 感放射線性樹脂組成物、スペーサーおよびその形成方法
CN101543135B (zh) 2007-05-31 2011-04-13 松下电器产业株式会社 有机电致发光元件和其制造方法
KR101599757B1 (ko) * 2011-09-30 2016-03-04 디아이씨 가부시끼가이샤 잉크젯 잉크용 기록 매체, 잉크젯 인쇄물 및 그 제조 방법
KR102378162B1 (ko) * 2014-04-25 2022-03-23 에이지씨 가부시키가이샤 네거티브형 감광성 수지 조성물, 격벽 및 광학 소자
US20210364916A1 (en) * 2020-05-21 2021-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist composition and method of forming photoresist pattern

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2670791A1 (fr) * 1990-12-21 1992-06-26 Atochem Composition a base de copolymere fluore reticulable pour peintures et vernis.
JP3650985B2 (ja) * 1997-05-22 2005-05-25 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物およびパターン製造法
JP3873263B2 (ja) * 1997-09-22 2007-01-24 Ｊｓｒ株式会社 感放射線性樹脂組成物、保護膜、層間絶縁膜およびこれらの膜の形成法
JP3644243B2 (ja) * 1998-03-31 2005-04-27 Ｊｓｒ株式会社 感放射線性樹脂組成物、カラーフィルタおよび液晶表示素子
JPH11329724A (ja) * 1998-05-08 1999-11-30 Futaba Corp 有機ｅｌ表示素子とその製造方法
JP2000305267A (ja) * 1999-04-22 2000-11-02 Jsr Corp 感光性樹脂組成物
JP3891753B2 (ja) * 2000-02-22 2007-03-14 シャープ株式会社 有機発光素子の製造方法
US6468712B1 (en) * 2000-02-25 2002-10-22 Massachusetts Institute Of Technology Resist materials for 157-nm lithography

Also Published As

Publication number Publication date
EP1296186B1 (de) 2006-06-07
US6852476B2 (en) 2005-02-08
DE60212024T2 (de) 2006-11-30
EP1296186A1 (de) 2003-03-26
TWI311577B (en) 2009-07-01
US20030068574A1 (en) 2003-04-10
KR20030051178A (ko) 2003-06-25
JP2003082042A (ja) 2003-03-19

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